-
Analyzing Variability in Short-Channel Quantum Transport from Atomistic First Principles
05 Nov 2015 | | Contributor(s):: Qing Shi
IWCE 2015 invited presentation. Due to random impurity fluctuations, the device-to-device variability is a serious challenge to emerging nanoelectronics. In this talk I shall present a theoretical formalism and its numerical realization to predict quantum-transport variability from...
-
ANGEL - A Nonequilibrium Green Function Solver for LEDs
18 Jan 2010 | | Contributor(s):: sebastian steiger
An MPI-parallelized implementation of 1-D NEGF for heterostructures. Includes off-diagonal scattering. Effective mass band structure for electrons and holes. The online tool only provides basic NEGF functionality without scattering.
-
Animations of magnetic QCA operation
21 Oct 2007 | | Contributor(s):: Dmitri Nikonov, George Bourianoff
Animations of an inverter and a majority gate operation for QCA logic for the paper"Simulation of highly idealized, atomic scale MQCA logic circuits"by Dmitri E. Nikonov, George I. Bourianoff, Paolo A. GarginiMore detailed description to follow.
-
Anisotropic magnetoresistance in colossal magnetoresistive La1-xSrxMnO3 thin films
03 Sep 2010 | | Contributor(s):: Jeng-Bang (Tony) Yau
We report on magnetic field and temperature dependent measurements of the anisotropic magnetoresistance (AMR) in epitaxial La1-xSrxMnO3 (LSMO) thin flms. While in 3d ferromagnetic alloys increasing the magnetization, either by reducing the temperature or increasing the magnetic field, increases...
-
Anisotropic Schrödinger Equation Quantum Corrections for 3D Monte Carlo Simulations of Nanoscale Multigate Transistors
16 Dec 2015 | | Contributor(s):: Karol Kalna, Muhammad Ali A. Elmessary, Daniel Nagy, Manuel Aldegunde
IWCE 2015 presentation. We incorporated anisotropic 2D Schrodinger equation based quantum corrections (SEQC) that depends on valley orientation into a 3D Finite Element (FE) Monte Carlo (MC) simulation toolbox. The MC toolbox was tested against experimental ID-VG characteristics of the 22 nm gate...
-
Application of the Keldysh Formalism to Quantum Device Modeling and Analysis
14 Jan 2008 | | Contributor(s):: Roger Lake
The effect of inelastic scattering on quantum electron transport through layered semi-conductor structures is studied numerically using the approach based on the non-equilibrium Green's function formalism of Keldysh, Kadanoff, and Baym. The Markov assumption is not made, and the energy coordinate...
-
Application of the nanoHUB tools in the Classroom
27 Jul 2011 | | Contributor(s):: Dragica Vasileska
This online presentation describes the application of the nanoHUB tools in the classroom.
-
AQME - Advancing Quantum Mechanics for Engineers
12 Aug 2008 | | Contributor(s):: Gerhard Klimeck, Xufeng Wang, Dragica Vasileska
One-stop-shop for teaching quantum mechanics for engineers
-
AQME Exercise: Bound States – Theoretical Exercise
20 Jul 2010 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
The objective of this exercise is to teach the students the theory behind bound states in a quantum well.
-
AQME: SCHRED Assignment – Quantum Confinement
13 Jul 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This assignment teaches the students about quantum confinement in MOS capacitors.
-
Archimedes, GNU Monte Carlo simulator
29 May 2008 | | Contributor(s):: Jean Michel D Sellier
GNU Monte Carlo simulation of 2D semiconductor devices, III-V materials
-
Assembly for Nanotechnology Survey Courses
05 Nov 2008 | | Contributor(s):: Gerhard Klimeck, Dragica Vasileska
Educational Tools for Classroom and Homework use to introduce nanotechnology concepts
-
Atomistic Alloy Disorder in Nanostructures
26 Feb 2007 | | Contributor(s):: Gerhard Klimeck
Electronic structure and quantum transport simulations are typically performed in perfectly ordered semiconductor structures. Bands and modes are defined resulting in quantized conduction and discrete states. But what if the material is fundamentally disordered? What if the disorder is at the...
-
Atomistic Electronic Structure Calculations of Unstrained Alloyed Systems Consisting of a Million Atoms
14 Jan 2008 | | Contributor(s):: Gerhard Klimeck, Timothy Boykin
The broadening of the conduction and valence band edges due to compositional disorder in alloyed materials of finite extent is studied using an s p3 s ∗ tight binding model. Two sources of broadening due to configuration and concentration disorder are identified. The concentrational disorder...
-
Atomistic Green's Function Method 1-D Atomic Chain Simulation
16 Apr 2007 | | Contributor(s):: Zhen Huang, Wei Zhang, Timothy S Fisher, Sridhar Sadasivam
Calculation of Thermal Conductance of an Atomic Chain
-
Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org
16 Dec 2010 | | Contributor(s):: Gerhard Klimeck
At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the semiconductor materials modeling community usually treats infinitely periodic structures. Two electronic...
-
Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org - Part 1
21 Jul 2011 | | Contributor(s):: Gerhard Klimeck
-
Atomistic Modeling of Nano Devices: From Qubits to Transistors
12 Apr 2016 | | Contributor(s):: Rajib Rahman
In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spin-orbit-valley coupling in spin qubits to non-equilibrium charge transport in tunneling transistors. I will show how atomistic full configuration interaction calculations of exchange...
-
Atomistic Simulations of Materials Chemistry: From Nanoelectronics to Energetics
06 Apr 2015 | | Contributor(s):: Alejandro Strachan
Presentation slides with embedded videos are available for download. Please see the Support Docs tab.
-
Atomistic Simulations of Reliability
01 Jul 2010 | | Contributor(s):: Dragica Vasileska
Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have recently been researched as a major cause of reliability degradation observed in intra-die and die-to-die...