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ECE 495N: Fundamentals of Nanoelectronics Lecture Notes (Fall 2009)
04 Feb 2010 | | Contributor(s):: Mehdi Salmani Jelodar, Supriyo Datta (editor)
Lecture notes for the Fall 2009 teaching of ECE 495: Fundamentals of Nanoelectronics.
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Introduction to Compact Models and Circuit Simulation
21 Jun 2013 | | Contributor(s):: Jaijeet Roychowdhury
With NEEDS introduction by Mark Lundstrom. This talk contains a brief introduction to Verilog-A and suggests some initial guidelines for writing Verilog-A versions of NEEDS models.
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Worked Examples for Carrier Statistics (advanced)
16 Aug 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
Two worked out examples based on Fermi-Dirac Vs Maxwell-Boltzmann statistics and temperature effects are presented.
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05 Ferroelectric Devices for Compute-in-Memory: Array-Level Operations
18 Sep 2020 | | Contributor(s):: Shimeng Yu, Panni Wang
Doped HfO2 based ferroelectric field-effect transistors (FeFETs) are being actively explored as emerging nonvolatile memory devices with the potential for compute-in-memory (CIM) paradigm. In this work, we explored the feasibility of array-level operations of FeFET in the context of in-situ...
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09 Demonstration of Vertical GaN PN Diode with Step-etched Triple zone JTE
14 Oct 2020 | | Contributor(s):: Hyun-Soo Lee, Yuxuan Zhang, Zhaoying Chen, Mohammad Wahidur Rahman, Hongping Zhao, Siddharth Rajan
We have demonstrated significantly improved BV of vertical GaN PN diode with STJTE without any degradation of forward characteristics. This is the first demonstration of a step-etched multiple zone edge termination for III-Nitride technology.
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1-D Modeling of HgCdTe Photodetectors Operated at Low Temperatures
04 Aug 2011 | | Contributor(s):: pradyumna muralidharan, Dragica Vasileska
This presentation describes the capabilities of the tool OPTODET: 1D HgCdTe photodetector modeling tool.
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1-D Phonon BTE Solver
28 Jul 2014 | | Contributor(s):: Joseph Adrian Sudibyo, Amr Mohammed, Ali Shakouri
Simulate heat transport by solving one dimensional Boltzmann transport equation.
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12 The Influence of the Gate Trench Orientation to the crystal Plane on the Conduction Properties of Vertical GaN MISFETs for Laser Driving Applications
13 Sep 2020 | | Contributor(s):: E. Bahat Treidel, O. Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, J. Würfl
In this work the development of vertical GaN MISFET technology is focused on pulsed laser driving applications with maximum voltages < 100 V (Fig. 1). Drivers for pulsed lasers are required to deliver very high currents up to 250 A in very short pulse lengths of 3 ns to 10 ns [4].
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15-Band Spectral Envelope Function Formalism Applied to Broken Gap Tunnel Field-Effect Transistors
21 Oct 2016 | | Contributor(s):: Devin Verreck, Maarten Van de Put, Anne Verhulst, Bart Soree, G. Groeseneken, Ashish Dabral
IWCE 2015 presentation.
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1D Heterostructure Tool
04 Aug 2008 | | Contributor(s):: Arun Goud Akkala, Sebastian Steiger, Jean Michel D Sellier, Sunhee Lee, Michael Povolotskyi, Tillmann Christoph Kubis, Hong-Hyun Park, Samarth Agarwal, Gerhard Klimeck, James Fonseca, Archana Tankasala, Kuang-Chung Wang, Chin-Yi Chen, Fan Chen
Poisson-Schrödinger Solver for 1D Heterostructures
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2003 Summer Institute Wokshop on Molecular Conduction
09 Jul 2003 |
The tutorials supplied below were part of the Molecular Conduction Workshop held at Purdue University in July of 2003.
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2004 Computational Materials Science Summer School
07 Jun 2004 |
This short course will explore a range of computational approaches relevant for nanotechnology.
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2008 NCN@Purdue Summer School: Electronics from the Bottom Up
26 Aug 2008 | | Contributor(s):: Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two...
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2009 NCN@Purdue Summer School: Electronics from the Bottom Up
22 Sep 2009 | | Contributor(s):: Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller
The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on laboratory session will be available in the afternoons.
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2010 MNTL UIUC Symposium Lecture 1 - Milton Feng at 60 : The Metamorphosis of the Transistor into a Laser
09 Aug 2010 | | Contributor(s):: Nick Holonyak, Jr
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2010 MNTL UIUC Symposium Lecture 2 - Optoelectronics
09 Aug 2010 | | Contributor(s):: Russell D. Dupuis
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2010 MNTL UIUC Symposium Lecture 3 - Large Scale InP Photonic Integrated Circuits
24 Aug 2010 | | Contributor(s):: Frederick A. Kish, Jr.
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2010 MNTL UIUC Symposium Lecture 4 - MicroElectronics
09 Aug 2010 | | Contributor(s):: Shyh-Chiang Shen
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2010 MNTL UIUC Symposium Lecture 5 - Device Scaling
24 Aug 2010 | | Contributor(s):: Peter Apostolakis
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2010 NCN@Purdue Summer School: Electronics from the Bottom Up
18 Jan 2011 |
Electronics from the Bottom Up seeks to bring a new perspective to electronic devices – one that is designed to help realize the opportunities that nanotechnology presents.