Tags: nanoelectronics

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Description

Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.

This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.' More information on Nanoelectronics can be found here.

Teaching Materials (81-100 of 408)

  1. Introductory Comments for Confined Carriers

    30 Jun 2011 | | Contributor(s):: Dragica Vasileska

    These handwritten notes give introductory notes for confined carriers and are part of the Semiconductor Transport class.

  2. General Concepts of Modeling Semiconductor Devices

    27 Jun 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This presentation is part of a series: Nanoelectronics and Modeling at the Nanoscale. It elucidates on the various methodologies needed for modeling semiconductor devices.

  3. Physics of Current and Future Devices

    27 Jun 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This set of powerpoint slides is part of a series Nanoelectronics and Modeling at the Nanoscale. It gives a glimpse on effects that occur in current and future nanoscale devices that have to be properly captured with appropriate physical models.

  4. Technology Trends as seen in Year 2011

    24 Jun 2011 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    In this presentations we discuss Nanotechnology Trends as seen in Year 2011.

  5. Manual for the Generalized Bulk Monte Carlo Tool

    24 Jun 2011 | | Contributor(s):: Raghuraj Hathwar, Dragica Vasileska

    This manual describes the physics implemented behind the generalized bulk Monte Carlo tool.

  6. Electron-Electron Interactions

    20 Jun 2011 | | Contributor(s):: Dragica Vasileska

    This set of slides describes the electron-electron interactions scattering rates calculations as it occurs in bulk materials, low-dimensional structures and semiconductor devices.

  7. Low-dimensional structures

    20 Jun 2011 | | Contributor(s):: Dragica Vasileska

    This set of slides describes some general properties of low-dimensional systems and their applications in nanoelectronics.

  8. Scattering rates of confined carriers

    20 Jun 2011 | | Contributor(s):: Dragica Vasileska

    Scattering rates of acoustic phonon scattering and interface roughness are described for a case of 1D confinement.

  9. Generalized Monte Carlo Presentation

    20 Jun 2011 | | Contributor(s):: Dragica Vasileska

    This presentation goes along with the Bulk Monte Carlo tool on the nanoHUB that calculates transients and steady-state velocity-field characteristics of arbitrary materials such as Si, Ge, GaAs, GaN, SiC, etc. The tool employs a non-parabolic bandstructure.

  10. Periodic Potential Lab Worked Examples

    11 Apr 2011 | | Contributor(s):: SungGeun Kim, Abhijeet Paul, Gerhard Klimeck, Lynn Zentner, Benjamin P Haley

    Worked Examples for Periodic Potential Lab

  11. ADEPT 2.0 First-Time User Guide

    03 Mar 2011 | | Contributor(s):: Xufeng Wang

    This first-time user guide provides a basic walk-through on how to run the ADEPT simulation tool.

  12. Quantum Dot Lab: First-Time User Guide

    08 Feb 2011 | | Contributor(s):: SungGeun Kim, Lynn Zentner

    This first-time user guide introduces the quantum dot lab tool. It includes an explanation of the input/output interface and the relationship between inputs and outputs of the quantum dot lab.NCN@Purdue[1] Gerhard Klimeck, Introduction to Quantum Dot Lab:...

  13. Solution of the Boltzmann Equation under low-field conditions

    05 Feb 2011 | | Contributor(s):: Dragica Vasileska

    In this presentation it is explained clearly when one can use the relaxation approximation and when one needs to use Rode's iterative method to calculate the low-field mobility in semiconductors. At the end examples are given of the effective and Hall mobilities which, as can be seen from the...

  14. Acoustic Phonon Scattering Explained

    05 Feb 2011 | | Contributor(s):: Dragica Vasileska

    In this lecture notes we derive and explain acoustic deformation potential scattering as it applies to transport calculations in covalent semiconductors.

  15. OMEN Nanowire: solve the challenge

    05 Feb 2011 | | Contributor(s):: SungGeun Kim

    This document includes a challenging problems for OMEN Nanowire users. It challenges users to establish a nanowire transistor structure such that it satisfy the ITRS 2010 requirements.

  16. BJT Lab Worked Out Problem 2

    02 Feb 2011 | | Contributor(s):: Saumitra Raj Mehrotra

    This sample worked out problem simulated a pnp type BJT in Common Base configuration and calculates AC and DC amplification ratios.

  17. BJT Lab Worked Out Problem 1

    01 Feb 2011 | | Contributor(s):: Saumitra Raj Mehrotra

    This sample worked out problem analyzes the output characteristic curves of an npn BJT transistor and extracts the relevant parameters.

  18. Boltzmann Transport Equation and Scattering Theory

    01 Feb 2011 | | Contributor(s):: Dragica Vasileska

    In this presentation we give simple derivation of the Boltzmann transport equation, describe the derivation of Fermi's Golden Rule, and present the derivation of most common scattering mechanisms in semiconductors.

  19. BJT Lab - Amplifier

    31 Jan 2011 | | Contributor(s):: Saumitra Raj Mehrotra

    This real life problem designs and calculates the AC amplification ratio for a Common-Emitter configuration npn type BJT.

  20. OMEN Nanowire Homework Problems

    24 Jan 2011 | | Contributor(s):: SungGeun Kim

    OMEN Nanowire homework problems: anyone who has gone through the first-time user guide of OMEN Nanowire and done the examples in the guide should be able to run simulations in these homework problems and find the answers to them.