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All Categories (61-80 of 2301)

1. IWCN 2021: Computational Research of CMOS Channel Material Benchmarking for Future Technology Nodes: Missions, Learnings, and Remaining Challenges

   15 Jul 2021 | | Contributor(s):: raseong kim, Uygar Avci, Ian Alexander Young

   In this preentation, we review our journey of doing CMOS channel material benchmarking for future technology nodes. Through the comprehensive computational research for past several years, we have successfully projected the performance of various novel material CMOS based on rigorous physics...

2. IWCN 2021: Multiscale Modeling and Simulation of Advanced Photovoltaic Devices

   14 Jul 2021 | | Contributor(s):: Yongjie Zou, Reza Vatan Meidanshahi, Raghuraj Hathwar, Stephen M. Goodnick

   The introduction of new materials, device concepts and nanotechnology-based solutions to achieve high efficiency and low cost in photovoltaic (PV) devices requires modeling and simulation well beyond the current state of the art. New materials and heterojunction interfaces require atomistic...

3. IWCN 2021: Thermoelectric Properties of Complex Band and Nanostructured Materials

   14 Jul 2021 | | Contributor(s):: Neophytos Neophytou, Patrizio Graziosi, Vassilios Vargiamidis

   In this work, we describe a computational framework to compute the electronic and thermoelectric transport in materials with multi-band electronic structures of an arbitrary shape by coupling density function theory (DFT) bandstructures to the Boltzmann Transport Equation (BTE).

4. IWCN 2021: A Practical Peierls Phase Recipe for Periodic Atomistic Systems Under Magnetic Fields

   14 Jul 2021 | | Contributor(s):: Alessandro Cresti

   In this contribution I will provide general ready-to-use formulas to determine Peierls phase factors that preserve the translation symmetry of any periodic quasi-one-dimensional or two-dimensional system under a homogeneous magnetic field.

5. IWCN 2021: Recursive Open Boundary and Interfaces Method for Material Property Predictions

   14 Jul 2021 | | Contributor(s):: James Charles, Sabre Kais, Tillmann Christoph Kubis

   In this presentation, we show that assuming periodicity elevates a small perturbation of a periodic cell into a strong impact on the material property prediction. Periodic boundary conditions can be applied on truly periodic systems only. More general systems should apply an open boundary...

6. Transistor Mania: Modeling Electron Flow

   17 Jun 2021 | | Contributor(s):: Meghan Saxer, NNCI Nano

   This activity is designed to help the students understand the significance of transistors in their lives. Students will learn how current research on nanoscale transistors is making their favorite electronic devices (i.e., cell phones, gaming devices, computers, etc.) faster and more powerful....

7. SimTools: Delivering Simulations in the Era of Abundant Data

   04 Jun 2021 | | Contributor(s):: Alejandro Strachan

   This presentation introduces SimTool, a library that allows developers to create, publish, and share reproducible workflows with well-defined and verified inputs and outputs.

8. FDNS21: Epitaxial Growth of Transition Metal Dichalcogenides – The Path to Wafer-scale Single Crystal Monolayers

   20 May 2021 | | Contributor(s):: Joan Redwing

9. FDNS21: Revealing the Full Spectrum of 2D Materials with Superhuman Predictive Abilities

   20 May 2021 | | Contributor(s):: Evan Reed

10. FDNS21: Van der Waals Epitaxy of Atomically Thin Metal Oxide

    20 May 2021 | | Contributor(s):: Lili Cai

11. EOLAS NEGF Transport Simulator

    18 May 2021 | | Contributor(s):: Alfonso Sanchez, Thomas Kelly

    Effective-mass / NEGF simulator for electronic transport in Si nanostructures

12. FDNS21: Disorder and Defects in van der Waals Heterostructures

    11 May 2021 | | Contributor(s):: Daniel A Rhodes

13. FDNS21: Realizing 2D Transport in 2D Van der Waals Crystals

    27 Apr 2021 | | Contributor(s):: Jiwoong Park

14. FDNS21: Artificial van der Waals Crystals

    27 Apr 2021 | | Contributor(s):: Cheol-Joo Kim

15. 

    Lain-Jong (Lance) Li

    Dr. Lain-Jong Li received a BSc and an MSc in chemistry at the National Taiwan University. After 5 years of R&D at the Taiwan Semiconductor Manufacturing Company (1997-2002), he obtained his PhD in...

    https://nanohub.org/members/324936

16. nanoHUB MuGFET Tool Tutorial

    05 Mar 2021 | | Contributor(s):: Ashish anil Bait

    This is a basic tutorial on how to use the nanohub MuGFET tool to simulate FinFET or double gate model free of cost.

17. Short Channel Effects

    05 Mar 2021 | | Contributor(s):: Ashish anil Bait

    Here are the all short channel effects that you require.

18. Concept of FinFET Part-I

    05 Mar 2021 | | Contributor(s):: Ashish anil Bait

    Here is the video introducing latest transistor technology used in processors.

19. Concept of FinFET Part-II

    05 Mar 2021 | | Contributor(s):: Ashish anil Bait

    Here is the video introducing latest transistor technology used in processors.

20. Short Course on FinFET Simulation using MuGFET

    05 Mar 2021 | | Contributor(s):: Ashish anil Bait

    This short course present how to use nanohub MuGFET tool to simulate FinFET or double gate model. It provides a short background on FinFET followed by instructions on how to use the MuGFET tool for the FinFET simulation.