Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
NEMO 1-D: The First NEGF-based TCAD Tool and Network for Computational Nanotechnology
out of 5 stars
28 Dec 2004 | | Contributor(s):: Gerhard Klimeck
Nanotechnology has received a lot of public attention since U.S. President Clinton announced the U.S.National Nanotechnology Initiative. New approaches to applications in electronics, materials,medicine, biology and a variety of other areas will be developed in this new multi-disciplinary...
Nanotechnology 101 Lecture Series
25 Aug 2004 |
Welcome to Nanotechnology 101, a series of lectures designed to provide an undergraduate-level introduction to nanotechnology. In contrast, the Nanotechnology 501 series offers lectures for the graduate-level and professional audiences.
Electronic Transport in Semiconductors (Introductory Lecture)
25 Aug 2004 | | Contributor(s):: Mark Lundstrom
Welcome to the ECE 656 Introductory lecture. The objective of the course is to develop a clear, physical understanding of charge carrier transport in bulk semiconductors and in small semiconductor devices.The emphasis is on transport physics and its consequences in a device context. The course...
Process Variation: An Evalution of Carbon Nanotube Transistor Field Effect Transistors
16 Aug 2004 | | Contributor(s):: , ,
Process variation is the observed deviation of device parameters in mass production processes. As the critical dimensions of today's MOSFET's are continously decreasing, process variation is becoming an increased problem.
Modification of Si(111) Surfaces using Self - Assembled Monolayers (SAMs) for Electrochemical and AF
16 Aug 2004 |
Recent researchers in the electrical engineering field are using self-assembled monolayers techniques with aryldiazonium salts solutions to build nanoelectronic devices. This innovation can explain the molecular conductivity and the chemical covalent bonds between π- conjugated orbitals of the...
Hydrodynamic Separation of Micron-sized Particles through Magnetization
Many assays and lab-on-a-chip projects require the use of uniform magnetic particles. Creating magnetic particles of uniform size and magnetization is a difficult task. The next best alternative is to make a distribution of particles and separate them.
Visualization of CNT FET Electrical Field Lines
15 Aug 2004 | | Contributor(s):: ,
With transistors decreasing to nanometric dimensions, limits of current processing technologies are being reached. Many physical obstacles still need to be overcome to replace earlier silicon devices with Carbon NanoTube Field Effect Transistors (CNT FETs).
Quantum Dots Visualization Software using Electron Wave Function
15 Aug 2004 | | Contributor(s):: Patrick Macnamara,
The viewing of electron orbitals is a necessary element in the investigation of quantum dot structures as well as in their conceptualization. With an electron wave function superimposed over a crystalline quantum dot structure containing a million to three million atoms, we adapted the marching...
Visualization of and Educational Tool for Quantum Dots
15 Aug 2004 | | Contributor(s):: Aaron Christensen, Adrian Rios
Quantum dots (QDs) are confined structures made of metals and semiconductors that are capable of containing free electrons.The ability to visualize these small devices is advantageous in determining probable electron orbitals and in observing information not easily conceived in raw datasets.
Measurements of Interface Trap Density in MOS Capacitors Using AC Conductance Method
15 Aug 2004 | | Contributor(s):: Benafsha Shahlori
4-H SiC MOS capacitors have a broad interface state density located at approximately 2.9eV above the valence band edge. These states reduce mobility through carrier trapping which in turn affects the electrical performance of these devices. The ac conductance technique is used to measure...
Feasibility of Molecular Assemblers
15 Aug 2004 | | Contributor(s):: LaDawn Biddle
Molecular manufacturing is expected to be the Industrial Revolution of the 21st century. Essentially all mechanized products are anticipated to be improved with the use of molecular assemblers.
Exploiting the Electronic Properties of Proteins: An Approach to Nanoscale Electronics
26 Jul 2004 | | Contributor(s):: Ron Reifenberger
Exploiting the Electronic Properties of Protiens: An Approach to Nanoscale Electronics
Faster Materials versus Nanoscaled Si and SiGe: A Fork in the Roadmap?
20 Apr 2004 | | Contributor(s):: Jerry M. Woodall
Strained Si and SiGe MOSFET technologies face fundamental limits towards the end of this decade when the technology roadmap calls for gate dimensions of 45 nm headed for 22 nm. This fact, and difficulties in developing a suitable high-K dielectric, have stimulated the search for alternatives to...
Control of Exchange Interaction in a Double Dot System
05 Feb 2004 | | Contributor(s):: Mike Stopa
As Rolf Landauer observed in 1960, information is physical. As a consequence, the transport and processing of information must obey the laws of physics. It therefore makes sense to base the laws of information processing and computation on the laws of physics and in particular on quantum...
Nanoscale Patterning of CdS/CdTe Solar Cells
21 Apr 2004 | | Contributor(s):: Cesar Lopez
2003 SURI Conference Proceedings
Ordered Nanocrystalline Thin Films for High Efficiency CdS/CdTe Solar Cells
21 Apr 2004 |
2003 SURI Conference Proceeding
Enhanced Pool Boiling Using Carbon Nanotube Arrays
Infrared Spectroscopy of Self-Assembled Monolayers
21 Apr 2004 | | Contributor(s):: Mac Inerowicz
Circuit Applications of Carbon Nanotube FETs
21 Apr 2004 | | Contributor(s):: Natasha Lynn Collier, Rand K. Jean, Saleem Kala, Patrick Ndai
2003 SURI Circuits Team abstracts and presentation slides. Please view each persons abstract linked below.
2003 Summer Institute Wokshop on Molecular Conduction
09 Jul 2003 |
The tutorials supplied below were part of the Molecular Conduction Workshop held at Purdue University in July of 2003.