Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Simulating Electronic Conduction Through the NanoHub
out of 5 stars
09 Jul 2003 | | Contributor(s):: Sebastien Goasguen
Simulating Electronic Conduction Through the nanoHUB
Probing Molecular Conduction with Scanning Probe Microscopy
08 Jul 2004 | | Contributor(s):: Mark Hersam
This tutorial will provide an overview of scanning probe microscopy (SPM) andits application towards problems in molecular conduction. In an effort to communicatethe power and limitations of these instruments, the tutorial will describe designconsiderations and reveal the detailed construction of...
Quantum Chemistry Part I
08 Jul 2004 | | Contributor(s):: Mark Ratner
This tutorial will provide an overview of electronic structure calculations from achemist's perspective. This will include a review of the basic electronic structuretheories.
Understanding Molecular Conduction
08 Jul 2004 | | Contributor(s):: Supriyo Datta
It is common to differentiate between two ways of building a nanodevice: a topdown approach where we start from something big and chisel out what we want and abottom-up approach where we start from something small like atoms or molecules andassemble what we want. When it comes to describing...
Curriculum on Nanotechnology
27 Jan 2005 |
To exploit the opportunities that nanoscience is giving us, engineers will need to learn how to think about materials, devices, circuits, and systems in new ways. The NCN seeks to bring the new understanding emerging from research in nanoscience into the graduate and undergraduate curriculum. The...
Exponential Challenges, Exponential Rewards - The Future of Moore's Law
14 Dec 2004 | | Contributor(s):: Shekhar Borkar
Three exponentials have been the foundation of today's electronics, which are often taken for granted—namely transistor density, performance, and energy. Moore's Law captures the impact of these exponentials. Exponentially increasing transistor integration capacity, and exponentially...
NEMO 1-D: The First NEGF-based TCAD Tool and Network for Computational Nanotechnology
28 Dec 2004 | | Contributor(s):: Gerhard Klimeck
Nanotechnology has received a lot of public attention since U.S. President Clinton announced the U.S.National Nanotechnology Initiative. New approaches to applications in electronics, materials,medicine, biology and a variety of other areas will be developed in this new multi-disciplinary...
Nanotechnology 101 Lecture Series
Welcome to Nanotechnology 101, a series of lectures designed to provide an undergraduate-level introduction to nanotechnology. In contrast, the Nanotechnology 501 series offers lectures for the graduate-level and professional audiences.
Electronic Transport in Semiconductors (Introductory Lecture)
25 Aug 2004 | | Contributor(s):: Mark Lundstrom
Welcome to the ECE 656 Introductory lecture. The objective of the course is to develop a clear, physical understanding of charge carrier transport in bulk semiconductors and in small semiconductor devices.The emphasis is on transport physics and its consequences in a device context. The course...
Process Variation: An Evalution of Carbon Nanotube Transistor Field Effect Transistors
16 Aug 2004 | | Contributor(s):: Sergio Urban, Alvin Lacson, Louis Bonhami
Process variation is the observed deviation of device parameters in mass production processes. As the critical dimensions of today's MOSFET's are continously decreasing, process variation is becoming an increased problem.
Modification of Si(111) Surfaces using Self - Assembled Monolayers (SAMs) for Electrochemical and AF
16 Aug 2004 | | Contributor(s):: Rosangelly Flores Pérez
Recent researchers in the electrical engineering field are using self-assembled monolayers techniques with aryldiazonium salts solutions to build nanoelectronic devices. This innovation can explain the molecular conductivity and the chemical covalent bonds between π- conjugated orbitals of the...
Hydrodynamic Separation of Micron-sized Particles through Magnetization
16 Aug 2004 | | Contributor(s):: Michael Benko
Many assays and lab-on-a-chip projects require the use of uniform magnetic particles. Creating magnetic particles of uniform size and magnetization is a difficult task. The next best alternative is to make a distribution of particles and separate them.
Visualization of CNT FET Electrical Field Lines
15 Aug 2004 | | Contributor(s):: Muriel Fort, Sameer Hamdan
With transistors decreasing to nanometric dimensions, limits of current processing technologies are being reached. Many physical obstacles still need to be overcome to replace earlier silicon devices with Carbon NanoTube Field Effect Transistors (CNT FETs).
Quantum Dots Visualization Software using Electron Wave Function
15 Aug 2004 | | Contributor(s):: Patrick Macnamara, Laurie St. Ange
The viewing of electron orbitals is a necessary element in the investigation of quantum dot structures as well as in their conceptualization. With an electron wave function superimposed over a crystalline quantum dot structure containing a million to three million atoms, we adapted the marching...
Visualization of and Educational Tool for Quantum Dots
15 Aug 2004 | | Contributor(s):: Aaron Christensen, Adrian Rios
Quantum dots (QDs) are confined structures made of metals and semiconductors that are capable of containing free electrons.The ability to visualize these small devices is advantageous in determining probable electron orbitals and in observing information not easily conceived in raw datasets.
Measurements of Interface Trap Density in MOS Capacitors Using AC Conductance Method
15 Aug 2004 | | Contributor(s):: Benafsha Shahlori
4-H SiC MOS capacitors have a broad interface state density located at approximately 2.9eV above the valence band edge. These states reduce mobility through carrier trapping which in turn affects the electrical performance of these devices. The ac conductance technique is used to measure...
Feasibility of Molecular Assemblers
15 Aug 2004 | | Contributor(s):: LaDawn Biddle
Molecular manufacturing is expected to be the Industrial Revolution of the 21st century. Essentially all mechanized products are anticipated to be improved with the use of molecular assemblers.
Exploiting the Electronic Properties of Proteins: An Approach to Nanoscale Electronics
26 Jul 2004 | | Contributor(s):: Ron Reifenberger
Exploiting the Electronic Properties of Protiens: An Approach to Nanoscale Electronics
Faster Materials versus Nanoscaled Si and SiGe: A Fork in the Roadmap?
20 Apr 2004 | | Contributor(s):: Jerry M. Woodall
Strained Si and SiGe MOSFET technologies face fundamental limits towards the end of this decade when the technology roadmap calls for gate dimensions of 45 nm headed for 22 nm. This fact, and difficulties in developing a suitable high-K dielectric, have stimulated the search for alternatives to...
Control of Exchange Interaction in a Double Dot System
05 Feb 2004 | | Contributor(s):: Mike Stopa
As Rolf Landauer observed in 1960, information is physical. As a consequence, the transport and processing of information must obey the laws of physics. It therefore makes sense to base the laws of information processing and computation on the laws of physics and in particular on quantum...