Tags: nanotransistors

Description

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

Online Presentations (1-20 of 312)

  1. A Short Overview of the NEEDS Initiative

    06 Jun 2016 | Online Presentations | Contributor(s): Mark Lundstrom

    The talk is a brief overview of the program that discusses the rationale, status, and plans for NEEDS.

    https://nanohub.org/resources/24336

  2. Phonon Interactions in Single-Dopant-Based Transistors: Temperature and Size Dependence

    25 Nov 2015 | Online Presentations | Contributor(s): Marc Bescond, Nicolas Cavassilas, Salim Berrada

    IWCE 2015 presentation. in this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. we use...

    https://nanohub.org/resources/23096

  3. Inter-band Tunnel Transistors: Opportunities and Challenges

    30 Oct 2015 | Online Presentations | Contributor(s): Suman Datta

    In this talk, we will review progress in Tunnel FETs and also analyze primary roadblocks in the path towards achieving steep switching performance in III-V HTFET.

    https://nanohub.org/resources/23000

  4. Negative Capacitance Ferroelectric Transistors: A Promising Steep Slope Device Candidate?

    30 Oct 2015 | Online Presentations | Contributor(s): Suman Datta

    In this talk, we will review progress in non-perovskite ALD based ferroelectric dielectrics which have strong implication for VLSI compatible negative capacitance Ferroelectric FETs.

    https://nanohub.org/resources/23011

  5. The Deployment and Evolution of the First NEEDS- Certified Model — MIT Virtual Source Compact Model for Silicon Nanotransistors

    04 Oct 2015 | Online Presentations | Contributor(s): Shaloo Rakheja

    In my talk, I will walk you through the fundamental steps involved in developing compact models, using the MVS model as an example. From the “lessons learned” in the process of MVS...

    https://nanohub.org/resources/22752

  6. The Ultimate Scaling Limit - A Deterministic Single Atom Transistor

    10 Mar 2015 | Online Presentations | Contributor(s): Gerhard Klimeck

    A talk by Dr. Gerhard Klimeck, Director of nanoHUB.org, Purdue University, Founder of NEMOco, LLC @ the University of Michigan.

    https://nanohub.org/resources/22031

  7. RF Solid-State Vibrating Transistors

    15 Feb 2014 | Online Presentations | Contributor(s): Dana Weinstein

    In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of...

    https://nanohub.org/resources/20335

  8. ECE 612 Lecture 9: Subthreshold Conduction

    25 Jan 2014 | Online Presentations | Contributor(s): Mark Lundstrom

    Please view ECE 612 Lecture 12: Subthreshold Conduction from the 2006 teaching.

    https://nanohub.org/resources/5617

  9. ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances

    25 Jan 2014 | Online Presentations | Contributor(s): Mark Lundstrom

    Please view ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances from the 2006 teaching.

    https://nanohub.org/resources/5618

  10. Tunnel FETs - Device Physics and Realizations

    10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch

    Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source...

    https://nanohub.org/resources/18723

  11. ECE 695A Lecture 18: DC-IV and Charge Pumping Methods

    25 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Recall: Properties of Interface Defects Flux-based method 1: Direct Current-Voltage method Flux-based method 2: Charge pumping method Conclusions

    https://nanohub.org/resources/17023

  12. ECE 695A Lecture 16: Review Questions

    22 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Question What is the difference between hot atom dissociation vs. cold atom dissociation?. Many experiments are reported at 77K and 295K. Why these temperatures?. Why is there such...

    https://nanohub.org/resources/17014

  13. ECE 695A Lecture 17: Subthreshold and Idlin Methods

    21 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    https://nanohub.org/resources/16965

  14. ECE 695A Lecture 15R: Review Questions

    20 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Why is BTBT tunneling important for OFF-state HCI, but nor for ON-state HCI? What type of bond dissociation dominated DeMOS degradation? Provide two supporting arguments....

    https://nanohub.org/resources/16933

  15. ECE 695A Lecture 14a: Voltage Dependent HCI I

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and Empirical Observations Theory of Hot Carriers: Hydrodynamic Model Theory of Hot Carriers: Monte Carlo Model Theory of Hot Carriers: Universal...

    https://nanohub.org/resources/16895

  16. ECE 695A Lecture 14b: Voltage Dependent HCI II

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and Empirical Observations Theory of Hot Carriers: Hydrodynamic Model Theory of Hot Carriers: Monte Carlo Model Theory of Hot Carriers: Universal...

    https://nanohub.org/resources/16896

  17. ECE 695A Lecture 14R: Review Questions

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions Why is Isub called a thermometer of hot electron distribution? Why can you not simply measure hot electrons by looking at the drain current? What are the three methods of...

    https://nanohub.org/resources/16897

  18. ECE 695A Lecture 15: Off-state HCI Degradation

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: ON vs. OFF State HCI Degradation Origin of hot carriers at off-state SiH vs. SiO – who is getting broken? Voltage acceleration factors by scaling Conclusions

    https://nanohub.org/resources/16919

  19. ECE 695A Lecture 16: Temperature Dependence of HCI

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Empirical observations regarding HCI Theory of bond dissociation: MVE vs. RRK Hot carrier dissociation of SiH bonds Hot carrier dissociation of SiO bonds Conclusions

    https://nanohub.org/resources/16920

  20. ECE 695A Lecture 13: Introductory Lecture on HCI Degradation

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and features of HCI Degradation Phenomenological observations Origin of Hot carriers Theory of Si-H Bond Dissociation Theory of Si-O Bond...

    https://nanohub.org/resources/16887