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2005 Molecular Conduction and Sensors Workshop
out of 5 stars
27 Jul 2005 |
This is the 3rd in a series of annual workshops on Molecular Conduction. The prior workshops have been at Purdue University, W. Lafayette, IN (2003) and Nothwestern University, Evanston, IL (2004). The workshop has been an informal and open venue for discussing new results, key challenges, and...
2008 NCN@Purdue Summer School: Electronics from the Bottom Up
26 Aug 2008 | | Contributor(s):: Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two...
2010 NCN@Purdue Summer School: Electronics from the Bottom Up
18 Jan 2011 |
Electronics from the Bottom Up seeks to bring a new perspective to electronic devices – one that is designed to help realize the opportunities that nanotechnology presents.
A Gentle Introduction to Nanotechnology and Nanoscience
13 Feb 2006 | | Contributor(s):: Mark Ratner
While the Greek root nano just means dwarf, the nanoscale has become a giant focus of contemporary science and technology. We will examine the fundamental issues underlying the excitement involved in nanoscale research - what, why and how. Specific topics include assembly, properties,...
A MATLAB code for Hartree Fock calculation of H-H ground state bondlength and energy using STO-4G
08 Aug 2006 | | Contributor(s):: Amritanshu Palaria
Hartree Fock (HF) theory is one of the basic theories underlying the current understanding of the electronic structure of materials. It is a simple non-relativistic treatment of many electron system that accounts for the antisymmetric (fermion) nature of electronic wavefunction but does not...
A Personal Quest for Information
19 Feb 2004 | | Contributor(s)::
This talk will report results and conclusions from my personal investigations into several different disciplines, carried out with the unifying intent of uncovering some of the fundamental principles that govern representation, processing, and the communication of information. The specific...
A Primer on Semiconductor Device Simulation
23 Jan 2006 | | Contributor(s):: Mark Lundstrom
Computer simulation is now an essential tool for the research and development of semiconductor processes and devices, but to use a simulation tool intelligently, one must know what's "under the hood." This talk is a tutorial introduction designed for someone using semiconductor device simulation...
A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006 | | Contributor(s):: Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the effect of...
A Short Overview of the NEEDS Initiative
05 Jun 2016 | | Contributor(s):: Mark Lundstrom
The talk is a brief overview of the program that discusses the rationale, status, and plans for NEEDS.
A Tutorial for Nanoelectronics Simulation Tools
03 Jul 2007 | | Contributor(s):: James K Fodor, Jing Guo
This learning module introduces nanoHUB users to some of the available simulators. The simulators discussed are FETToy, nanoMOS, Schred, CNTbands, and QDot Lab. For each simulator, a brief introduction to the simulator is presented, followed by voiced presentations featuring the simulator in...
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008 | | Contributor(s):: Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
An Electrical Engineering Perspective on Molecular Electronics
26 Oct 2005 | | Contributor(s):: Mark Lundstrom
After forty years of advances in integrated circuit technology, microelectronics is undergoing a transformation to nanoelectronics. Modern day MOSFETs now have channel lengths that are less than 50 nm long, and billion transistor logic chips have arrived. Moore's Law continues, but the end of...
Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org
16 Dec 2010 | | Contributor(s):: Gerhard Klimeck
At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the semiconductor materials modeling community usually treats infinitely periodic structures. Two electronic...
Ballistic Nanotransistors - Learning Module
07 Dec 2005 | | Contributor(s):: Mark Lundstrom
This resource is an introduction to the theory ballistic nanotransistors. No transistor is fully ballistic, but analyzing nanotransistors by neglecting scattering processes provides new insights into the performance and limits of nanoscale MOSFETs. The materials presented below introduces the...
Band Structure Lab Demonstration: Bulk Strain
03 Jun 2009 | | Contributor(s):: Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.
Bandstructure in Nanoelectronics
01 Nov 2005 | | Contributor(s):: Gerhard Klimeck
This presentation will highlight, for nanoelectronic device examples, how the effective mass approximation breaks down and why the quantum mechanical nature of the atomically resolved material needs to be included in the device modeling. Atomistic bandstructure effects in resonant tunneling...
BJT Lab: h-Parameters Calculation Exercise
30 Jun 2009 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
In this exercise students are required to obtain the appropriate input and output parameters to extract the small signal h-parameters in common-base configuration. Afterwards they need to derive the h-parameters in common-emitter configuration in terms of the h-parameters in the common base...
BNC Annual Research Symposium: Nanoelectronics and Semiconductor Devices
23 Apr 2007 | | Contributor(s):: David Janes
This presentation is part of a collection of presentations describing the projects, people, and capabilities enhanced by research performed in the Birck Center, and a look at plans for the upcoming year.
Can numerical “experiments” INSPIRE physical experiments?
20 Dec 2007 | | Contributor(s):: Supriyo Datta
This presentation was one of 13 presentations in the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.
Carbon Nanotube Electronics: Modeling, Physics, and Applications
30 Oct 2006 | | Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-κ gate...