Tags: nanotransistors

Description

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

All Categories (1-20 of 437)

  1. Sofia Cunha

    https://nanohub.org/members/195711

  2. SIDDHARTH KRISHNAN

    https://nanohub.org/members/190793

  3. Abdul Hamid Bin Yousuf

    https://nanohub.org/members/187936

  4. Srinivas Varma Pericherla

    https://nanohub.org/members/186462

  5. Adrian Suteu

    Source Graphene is the first based Romanian company focused on producing and supplying graphene oxide in water dispersion. Source Graphene has the capacity to obtain high, cost effective amounts...

    https://nanohub.org/members/175145

  6. Ahmed M Abdelgawad

    https://nanohub.org/members/169075

  7. Amogh Vithalkar

    https://nanohub.org/members/168737

  8. Al-Amin Sheikh

    https://nanohub.org/members/160887

  9. Akhil Devdas Prabhu

    https://nanohub.org/members/160853

  10. Chowdhury, Prodipto

    https://nanohub.org/members/152180

  11. A Short Overview of the NEEDS Initiative

    06 Jun 2016 | | Contributor(s):: Mark Lundstrom

    The talk is a brief overview of the program that discusses the rationale, status, and plans for NEEDS.

  12. Smt. A. Naga Malli

    Assistant Professor, Dept of ECE, Gayatri Vidya Parishad college of Engineeering(A)

    https://nanohub.org/members/146115

  13. George James.T (Dr.)

    https://nanohub.org/members/138016

  14. Phonon Interactions in Single-Dopant-Based Transistors: Temperature and Size Dependence

    25 Nov 2015 | | Contributor(s):: Marc Bescond, Nicolas Cavassilas, Salim Berrada

    IWCE 2015 presentation. in this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. we use a 3d real-space non-equilibrium green': ; s function (negf) approach where electron-phonon...

  15. Inter-band Tunnel Transistors: Opportunities and Challenges

    30 Oct 2015 | | Contributor(s):: Suman Datta

    In this talk, we will review progress in Tunnel FETs and also analyze primary roadblocks in the path towards achieving steep switching performance in III-V HTFET.

  16. Negative Capacitance Ferroelectric Transistors: A Promising Steep Slope Device Candidate?

    30 Oct 2015 | | Contributor(s):: Suman Datta

    In this talk, we will review progress in non-perovskite ALD based ferroelectric dielectrics which have strong implication for VLSI compatible negative capacitance Ferroelectric FETs.

  17. Sunjeet Jena

    https://nanohub.org/members/130889

  18. The Deployment and Evolution of the First NEEDS- Certified Model — MIT Virtual Source Compact Model for Silicon Nanotransistors

    04 Oct 2015 | | Contributor(s):: Shaloo Rakheja

    In my talk, I will walk you through the fundamental steps involved in developing compact models, using the MVS model as an example. From the “lessons learned” in the process of MVS release in 2013 and its subsequent updates, I will provide a checklist of good practices to adopt while...

  19. The Ultimate Scaling Limit - A Deterministic Single Atom Transistor

    10 Mar 2015 | | Contributor(s):: Gerhard Klimeck

    A talk by Dr. Gerhard Klimeck, Director of nanoHUB.org, Purdue University, Founder of NEMOco, LLC @ the University of Michigan.

  20. Sheikh Aamir Ahsan

    https://nanohub.org/members/102143