Tags: nanotransistors

Description

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

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  1. Control of Spin Precession in a Datta-Das Transistor Structure

    11 Apr 2011 | | Contributor(s):: Hyun Cheol Koo

    Transistors Switch onto Spin Using the spin of an electron in addition to, or instead of, the charge properties is believed to have many benefits in terms of speed, power-cost, and integration density over conventional electronic circuits. At the heart of the field of spintronics has been a...

  2. FETToy

    14 Feb 2006 | | Contributor(s):: Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom

    Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

  3. Electron Density in a Nanowire

    30 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Saumitra Raj Mehrotra

    Electron Density in a circular Silicon nanowire transistor.

  4. Tunneling in an Nanometer-Scaled Transistor

    25 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Mathieu Luisier, Neerav Kharche, George A. Howlett, Insoo Woo, David Ebert

    Electrons tunneling through the gate of an ultra-scaled transistor.

  5. 2010 NCN@Purdue Summer School: Electronics from the Bottom Up

    20 Apr 2010 |

    Electronics from the Bottom Up seeks to bring a new perspective to electronic devices – one that is designed to help realize the opportunities that nanotechnology presents.

  6. Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org

    16 Dec 2010 | | Contributor(s):: Gerhard Klimeck

    At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the semiconductor materials modeling community usually treats infinitely periodic structures. Two electronic...

  7. Hamed Abdy

    https://nanohub.org/members/50166

  8. Chemically Enhanced Carbon-Based Nanomaterials and Devices

    25 Oct 2010 | | Contributor(s):: Mark Hersam

    Carbon-based nanomaterials have attracted significant attention due to their potential to enable and/or improve applications such as transistors, transparent conductors, solar cells, batteries, and biosensors. This talk will delineate chemical strategies for enhancing the electronic and optical...

  9. Nanoelectronic Devices, With an Introduction to Spintronics

    20 Jul 2010 | | Contributor(s):: Supriyo Datta, Mark Lundstrom

      Nanoelectronic devices are at the heart of today's powerful computers and are also of great interest for many emerging applications including energy conversion, sensing and alternative computing paradigms. Our objective, however, is not to discuss specific devices or...

  10. Discussion Session 3 (Lectures 5 and 6)

    09 Sep 2010 | | Contributor(s):: Supriyo Datta

  11. Lecture 6: From Spins to Magnets: How quantum objects turn classical

    09 Sep 2010 | | Contributor(s):: Supriyo Datta

  12. Lecture 5: Electron Spin: How to rotate an electron to control the current

    09 Sep 2010 | | Contributor(s):: Supriyo Datta

  13. Discussion Session 2 (Lectures 3 and 4)

    08 Sep 2010 | | Contributor(s):: Supriyo Datta

  14. Simulator for a T-stub transistor in a magnetic field

    12 Mar 2010 | | Contributor(s):: Massimo Macucci

    Simulates transport and shot noise in a t-stub transistor in the presence of a magnetic field

  15. WALLA Lecture: Electronics, Microelectronics and Nanoelectronics

    04 May 2010 | | Contributor(s):: Mark Lundstrom

    The 21st century is the age of nanoelectronics and will be transformed by increasingly powerful electronic products. At the same time, new applications that apply nanoelectronics to challenges in health, the environment, and energy will be increasingly important. This talk is an introduction to...

  16. ECET 499N Lecture 5a: Nanoelectronics III - Datta Lecture Review

    18 Feb 2010 | | Contributor(s):: Helen McNally

  17. Illinois ECE 440: MOS Field-Effect Transistor Homework

    27 Jan 2010 | | Contributor(s):: Mohamed Mohamed

    This homework covers Output Characteristics and Mobility Model of MOSFETs.

  18. Illinois ECE 440: znipolar Junction Transistor (BJT) Homework

    27 Jan 2010 | | Contributor(s):: Mohamed Mohamed

    This homework covers BJT Fundamentals, Minority Carrier Distribution, and Terminal Currents.

  19. ECE 656 Lecture 36: The Course in a Lecture

    09 Dec 2009 | | Contributor(s):: Mark Lundstrom

  20. ECE 656 Lecture 35: Ballistic Transport

    09 Dec 2009 | | Contributor(s):: Mark Lundstrom

    Outline:Schottky barriersTransport across a thin baseHigh-field collectors