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ECE 695A Lecture 11R: Review Questions
08 Feb 2013 | | Contributor(s):: Muhammad Alam
Review Questions:Does Einstein relationship hold for activated diffusion?People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you support the argument?What assumption did I make regarding diffusion of H in SiO2 that makes the derivation...
ECE 695A Lecture 12: Field Dependence of NBTI
Outline:Background: Field dependent degradationComponents of field-dependent dissociation:Interpreting experimentsVoltage acceleration factorsConclusion
ECE 695A Lecture 12R: Review Questions
Review Questions:Explain the difference between local field and global field within an oxide. Explain physically why electric field decreases bond strength.How does the dissociation process becomes non-Arrhenius?Do you think the diffusion and repassivation will also become non-Arrhenius when...
ECE 695A Lecture 9R: Review Questions
Review Questions:Does NBTI power-exponent depend on voltage or temperature?Do you expect the NBTI power-exponent to be larger or smaller if trapping is important?How does one know that the diffusing species is neutral?How would the time-exponent different for a surround gate MOSFET vs. planar...
ECE 695A Lecture 11: Temperature Dependence of NBTI
07 Feb 2013 | | Contributor(s):: Muhammad Alam
Outline:Review: Temperature activation & NBTITemperature dependent forward/reverse ratesTemperature dependence of diffusion coefficientMaterial dependence of activation energyConclusion
ECE 695A Lecture 10: NBTI Time Dependence -- Frequency and Duty Cycle Dependencies
06 Feb 2013 | | Contributor(s):: Muhammad Alam
Outline:NBTI stress and relaxation by R-D modelFrequency independence and lifetime projectionDuty cycle dependenceThe magic of measurementConclusions
ECE 695A Lecture 9: NBTI Time Dependence -- Stress Phase
Outline:Background: Time-dependent degradationThe Reaction-Diffusion modelApproximate solution to R-D model in stress phaseDegradation free transistorsConclusions
ECE 695A Lecture 6: Defects in the Bulk and at Interfaces
01 Feb 2013 | | Contributor(s):: Muhammad Alam
Outline:Strain in materials/origin of defectsExamples: bulk defectsExamples: interface defectsMeasurementsConclusions
ECE 695A Lecture 8: Phenomenological Observations for NBTI
Outline:Qualitative observationsTime, voltage, temperature dependenciesMaterial dependenceCircuit implications
ECE 695A Lecture 8R: Review Questions
What is the distinction between BTI and NBTI phenomena?What does it mean that a process is thermally activated?What is the difference between parametric failure and catastrophic failure? Give examples. What are the time-characteristics of trapping, BTI, and NBTI?Which device will have poorer...
ECE 695A Lecture 7: Trapping in Pre-existing Traps
29 Jan 2013 | | Contributor(s):: Muhammad Alam
Outline:Pre-existing vs. stress-induced trapsVoltage-shift in pre-existing bulk/interface trapsRandom Telegraph Noise, 1/f noiseConclusion
ECE 695A Lecture 7A: Appendix - Theory of Stochastic Distribution
Supplemental information for Lecture 7: Trapping in Pre-existing Traps
ECE 695A Lecture 7R: Review Questions
Review Questions:Why are there more types of defects in crystals than in amorphous material?From the perspective of Maxwell’s relation, how does H reduce defect density?Why is HfO2 so defective --- and why do you want to use it?Which type of traps involve faster trapping/detrapping, Pb center or...
ECE 695A Reliability Physics of Nanotransistors
17 Jan 2013 | | Contributor(s):: Muhammad Alam
This course will focus on the physics of reliability of small semiconductor devices. In traditional courses on device physics, the students learn how to compute current through a device when a voltage is applied.
ECE 695A Lecture 1: Reliability of Nanoelectronic Devices
11 Jan 2013 | | Contributor(s):: Muhammad Alam
Outline:Evolving Landscape of ElectronicsPerformance, Variability, and ReliabilityClassification of ReliabilityCourse InformationConclusions
ECE 606 Lecture 25: Modern MOSFETs
03 Dec 2012 | | Contributor(s):: Gerhard Klimeck
ABACUS—Introduction to Semiconductor Devices
When we hear the term semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in...
Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
out of 5 stars
24 Oct 2012 | | Contributor(s):: Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning . (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret .) The objective is to understand how to treat MOS electrostatics without...
nanoHUB-U NT Nanoscale Transistors: Scientific Overview
03 Aug 2012 | | Contributor(s):: Mark Lundstrom
For details see http://nanohub.org/uNanoscale Transistors has been refined and condensed into a five-week online course that develops a unified framework for understanding essentials of nanoscale transistors without the need for admission, registration, or travel. This online course can be taken...