Tags: nanotransistors

Description

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

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  1. ECE 695A Lecture 16: Temperature Dependence of HCI

    19 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Empirical observations regarding HCITheory of bond dissociation: MVE vs. RRKHot carrier dissociation of SiH bondsHot carrier dissociation of SiO bondsConclusions

  2. ECE 695A Lecture 13: Introductory Lecture on HCI Degradation

    19 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Background and features of HCI DegradationPhenomenological observationsOrigin of Hot carriersTheory of Si-H Bond DissociationTheory of Si-O Bond DissociationConclusions

  3. ECE 695A Lecture 13R: Review Questions

    19 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Both SiH and SiO are involved in HCI degradation. Give two evidences.Why doesn’t HCI occur during NBTI stress condition?I suggested that HCI curve can shifted horizontally to form a universal curve, do you believe that I can do a corresponding vertical shift to form the...

  4. ECE 695A Lecture 5R: Review Questions

    12 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:What is the difference between coordination and composition?Is periodicity essential for a defect-free structure?Why can’t the amorphous material have arbitrary ring distribution?How does Temperature enter in Maxwell’s relationship?Do you expect more or less defect for...

  5. ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation

    08 Feb 2013 | | Contributor(s):: Muhammad Alam

  6. ECE 695A Lecture 11R: Review Questions

    08 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Does Einstein relationship hold for activated diffusion?People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you support the argument?What assumption did I make regarding diffusion of H in SiO2 that makes the derivation...

  7. ECE 695A Lecture 12: Field Dependence of NBTI

    08 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Background: Field dependent degradationComponents of field-dependent dissociation:Interpreting experimentsVoltage acceleration factorsConclusion

  8. ECE 695A Lecture 12R: Review Questions

    08 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Explain the difference between local field and global field within an oxide. Explain physically why electric field decreases bond strength.How does the dissociation process becomes non-Arrhenius?Do you think the diffusion and repassivation will also become non-Arrhenius when...

  9. ECE 695A Lecture 9R: Review Questions

    08 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Does NBTI power-exponent depend on voltage or temperature?Do you expect the NBTI power-exponent to be larger or smaller if trapping is important?How does one know that the diffusing species is neutral?How would the time-exponent different for a surround gate MOSFET vs. planar...

  10. ECE 695A Lecture 11: Temperature Dependence of NBTI

    07 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Review: Temperature activation & NBTITemperature dependent forward/reverse ratesTemperature dependence of diffusion coefficientMaterial dependence of activation energyConclusion

  11. ECE 695A Lecture 10: NBTI Time Dependence -- Frequency and Duty Cycle Dependencies

    06 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:NBTI stress and relaxation by R-D modelFrequency independence and lifetime projectionDuty cycle dependenceThe magic of measurementConclusions

  12. ECE 695A Lecture 9: NBTI Time Dependence -- Stress Phase

    06 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Background: Time-dependent degradationThe Reaction-Diffusion modelApproximate solution to R-D model in stress phaseDegradation free transistorsConclusions

  13. ECE 695A Lecture 6: Defects in the Bulk and at Interfaces

    01 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Strain in materials/origin of defectsExamples: bulk defectsExamples: interface defectsMeasurementsConclusions

  14. ECE 695A Lecture 8: Phenomenological Observations for NBTI

    01 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Qualitative observationsTime, voltage, temperature dependenciesMaterial dependenceCircuit implications

  15. ECE 695A Lecture 8R: Review Questions

    01 Feb 2013 | | Contributor(s):: Muhammad Alam

    What is the distinction between BTI and NBTI phenomena?What does it mean that a process is thermally activated?What is the difference between parametric failure and catastrophic failure? Give examples. What are the time-characteristics of trapping, BTI, and NBTI?Which device will have poorer...

  16. ECE 695A Lecture 7: Trapping in Pre-existing Traps

    29 Jan 2013 | | Contributor(s):: Muhammad Alam

    Outline:Pre-existing vs. stress-induced trapsVoltage-shift in pre-existing bulk/interface trapsRandom Telegraph Noise, 1/f noiseConclusion

  17. ECE 695A Lecture 7A: Appendix - Theory of Stochastic Distribution

    29 Jan 2013 | | Contributor(s):: Muhammad Alam

    Supplemental information for Lecture 7: Trapping in Pre-existing Traps

  18. ECE 695A Lecture 7R: Review Questions

    29 Jan 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Why are there more types of defects in crystals than in amorphous material?From the perspective of Maxwell’s relation, how does H reduce defect density?Why is HfO2 so defective --- and why do you want to use it?Which type of traps involve faster trapping/detrapping, Pb center or...

  19. ECE 695A Reliability Physics of Nanotransistors

    17 Jan 2013 | | Contributor(s):: Muhammad Alam

    This course will focus on the physics of reliability of small semiconductor devices. In traditional courses on device physics, the students learn how to compute current through a device when a voltage is applied.

  20. ECE 695A Lecture 1: Reliability of Nanoelectronic Devices

    11 Jan 2013 | | Contributor(s):: Muhammad Alam

    Outline:Evolving Landscape of ElectronicsPerformance, Variability, and ReliabilityClassification of ReliabilityCourse InformationConclusions