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ECE 695A Lecture 8: Phenomenological Observations for NBTI
01 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Time, voltage, temperature dependencies
ECE 695A Lecture 8R: Review Questions
What is the distinction between BTI and NBTI phenomena?
What does it mean that a process is thermally activated?
What is the difference between parametric failure and catastrophic failure?...
ECE 695A Lecture 7: Trapping in Pre-existing Traps
29 Jan 2013 | Online Presentations | Contributor(s): Muhammad Alam
Pre-existing vs. stress-induced traps
Voltage-shift in pre-existing bulk/interface traps
Random Telegraph Noise, 1/f noise
ECE 695A Lecture 7A: Appendix - Theory of Stochastic Distribution
Supplemental information for Lecture 7: Trapping in Pre-existing Traps
ECE 695A Lecture 7R: Review Questions
Why are there more types of defects in crystals than in amorphous material?
From the perspective of Maxwell’s relation, how does H reduce defect density?
Why is HfO2 so...
ECE 695A Reliability Physics of Nanotransistors
17 Jan 2013 | Courses | Contributor(s): Muhammad Alam
This course will focus on the physics of reliability of small semiconductor devices. In traditional courses on device physics, the students learn how to compute current through a device when a...
ECE 695A Lecture 1: Reliability of Nanoelectronic Devices
11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Alam
Evolving Landscape of Electronics
Performance, Variability, and Reliability
Classification of Reliability
ECE 606 Lecture 25: Modern MOSFETs
03 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
ABACUS—Introduction to Semiconductor Devices
When we hear the term semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in...
Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
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24 Oct 2012 | Teaching Materials | Contributor(s): Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals
of Modern VLSI Devices by Yuan Taur and Tak H. Ning . (Another good reference is
nanoHUB-U NT Nanoscale Transistors: Scientific Overview
03 Aug 2012 | Online Presentations | Contributor(s): Mark Lundstrom
For details see http://nanohub.org/u
Nanoscale Transistors has been refined and condensed into a five-week online course that develops a unified framework for understanding essentials of...
19 Jul 2012 | Courses | Contributor(s): Mark Lundstrom
These lectures discuss the physics of nanoscale transistors. The focus is on developing a sound, physical understanding of the...
Nanoscale Transistors Lecture 10: Scattering Model
19 Jul 2012 | Online Presentations | Contributor(s): Mark Lundstrom
Nanoscale Transistors Lecture 11: MOSFET Limits and Possibilities
Nanoscale Transistors Lecture 1: The Most Important Invention of the 20th Century?
Nanoscale Transistors Lecture 2: IV Characteristics - traditional approach
Nanoscale Transistors Lecture 3: Controlling Current by Modulating a Barrier
Nanoscale Transistors Lecture 4: MOS Electrostatics
Nanoscale Transistors Lecture 5: Transport - ballistic, diffusive, non-local, and quantum