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Electron Transport in Schottky Barrier CNTFETs
24 Oct 2017 | | Contributor(s):: Igor Bejenari
A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially or linearly decaying function along the channel. The ...
jesus alexis Gonzalez
Structure and Properties of Carbon and Boron Nitride Nanotubes
10 Jan 2014 | | Contributor(s):: Brian Demczyk
This presentation describes structure and mechanical property determinations on carbon and boron nitride (sp2-bonded) nanotubes , as deduced by transmission electron microscopy.
Carbon Nanotube Electronics: Modeling, Physics, and Applications
28 Jun 2013 | | Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...
Electron Phonon Interaction in Carbon Nanotube Devices
28 Jun 2013 | | Contributor(s):: Sayed Hasan
With the end of silicon technology scaling in sight, there has been a lot of interest in alternate novel channel materials and device geometry. Carbon nanotubes, the ultimate one-dimensional (1D) wire, is one such possibility. Since the report of the first CNT transistors, lots has been learned...
miguel angel Gregorio
VEERESHGOUDA S NARAGUND
Theoretical studies of rolled-up and wrinkled nanomembranes
20 Feb 2012 | | Contributor(s):: Peter Cendula
PhD thesis along with additional movie files.
Boron Nitride Nanotube Growth Mode
27 Jan 2012 | | Contributor(s):: Brian Demczyk
This writeup details the growth details of arc-synthesized boron nitride nanotubes, incorporating the results of atomic resolution transmission electron microscopy, image simulation and image exit wave reconstruction techniques.This research was supported in part by the Director of the Office of...
Boron Nitride Nanotube Structure
07 Oct 2011 | | Contributor(s):: Brian Demczyk, J. Cumings, A. Zettl
We have used high-resolution transmission electron microscopy to resolve the basal plane structure and chirality relationships in boron nitride nanotubes.
Nanodays - Space—Lab on Chip Technology: The final frontier
18 May 2011 | | Contributor(s):: Marshall Porterfield
Illinois Nano EP Seminar Series Spring 2010 - Lecture 5: Alignment of Carbon Nanotubes: a Route to Nanoelectronics
29 Jan 2011 | | Contributor(s):: Jianliang Xiao
Single walled carbon nanotubes (SWNTs) possess extraordinary electrical properties, with many possible applications in electronics. Dense, horizontally aligned arrays of linearly configured SWNTs represent perhaps the most attractive and scalable way to implement this class of nanomaterial in...
13 May 2010 | | Contributor(s):: Chanaka Suranjith Rupasinghe, Mufthas Rasikim
ninithi which is a free and opensource modelling software, can be used to visualize and analyze carbon allotropes used in nanotechnology. You can generate 3-D visualization of Carbon nanotubes, Fullerenes, Graphene and Carbon nanoribbons and analyze the band structures of nanotubes and graphene.
Self-Consistent Geometry, Density and Stiffness of Carbon Nanotubes
05 May 2010 | | Contributor(s):: R. Byron Pipes
A self-consistent set of relationships is developed for the physical properties of single walled carbon nanotubes (SWCN) and their hexagonal arrays as a function of the chiral vector integer pair, (n,m). Properties include effective radius, density, principal Young’s modulus, and specific...
Self-Consistent Properties of Carbon Nanotubes and Hexagonal Arrays as Composite Reinforcements
ECET 499N Lecture 8: Electron Microscopy
02 Mar 2010 | | Contributor(s):: Eric Stach
Guest lecture: Eric A. Stach
Illinois ABE 446 Lecture 2: Synthetic Nanostructures
11 Feb 2010 | | Contributor(s):: Kaustubh Bhalerao