Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
A nanowire is a nanostructure, with the diameter of the order of a nanometer. Alternatively, nanowires can be defined as structures that have a thickness or diameter constrained to tens of nanometers or less and an unconstrained length. At these scales, quantum mechanical effects are important.
Learn more about quantum dots from the many resources on this site, listed below. More information on Nanowires can be found here.
Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org
16 Dec 2010 | | Contributor(s):: Gerhard Klimeck
At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the semiconductor materials modeling community usually treats infinitely periodic structures. Two electronic...
Limits of Thermal Processes and their Implications on Efficient Energy Utilization
27 Oct 2010 | | Contributor(s):: Arunava Majumdar
About 90 percent of the world’s energy use involves thermal processes – thermal engines to generate mechanical power; heating and cooling in buildings; heating involved in manufacturing of steel, cement, glass, petrochemicals etc. To identify opportunities for improving current technologies or...
Thermoelectric effects in semiconductor nanostructures: Role of electron and lattice properties
06 Oct 2010 | | Contributor(s):: Abhijeet Paul, Gerhard Klimeck
This presentation covers some aspects of present development in the field of thermoelectricity and focuses particularly on the silicon nanowires as potential thermoelectric materials. The electronic and phonon dispersions are calculated and used for the calculation of thermoelectric properties...
Nanoelectronic Modeling Lecture 35: Alloy Disorder in Nanowires
05 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Timothy Boykin, Neerav Kharche, Mathieu Luisier, Neophytos Neophytou
This presentation discusses the consequences of Alloy Disorder in unstrained strained AlGaAs nanowiresRelationship between dispersion relationship and transmission in perfectly ordered wiresBand folding in Si nanowiresTranmisison in disordered wires – relationship to an approximate...
ECET 499N Lecture 10: Nanomaterials
12 Apr 2010 | | Contributor(s):: Helen McNally
Metal Oxide Nanowires as Gas Sensing Elements: from Basic Research to Real World Applications
out of 5 stars
21 Sep 2009 | | Contributor(s):: andrei kolmakov
Quasi 1-D metal oxide single crystal chemiresistors are close to occupy their specific niche in the real world of solid state sensorics. Potentially, the major advantage of this kind of sensors with respect to available granular thin film sensors will be their size and stable, reproducible and...
Illinois ECE 598EP Lecture 8 - Hot Chips: Thermal Conductivity of Solids
24 Jun 2009 | | Contributor(s):: Eric Pop, Omar N Sobh
Thermal Conductivity of SolidsTopics: Kinetic Theory of Energy Transport Simple Kinetic Theory Assumptions Phonon MFP and Scattering Time Silicon Film Thermal Conductivity Silicon Nanowire Thermal Conductivity Isotope Scattering Electron Thermal Conductivity Thermal Conductivity of Cu and Al
Lecture 2: Thresholds, Islands, and Fractals
04 Nov 2008 | | Contributor(s):: Muhammad A. Alam
Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via elementary examples. These three concepts will form the theoretical foundation for discussion in...
Lecture 1: Percolation in Electronic Devices
Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the diversity of these phenomena however, the concepts percolation theory provides a broad theoretical framework...
Some Important Aspects of the Chemistry of Nanomaterials
01 Jul 2008 | | Contributor(s):: C.N.R. Rao
Keynote address for the launch of the Center for Analytical Instrumentation Development.
BNC Annual Research Review: Thin-Film Electronics using Nanowire Transistors
06 Jun 2008 | | Contributor(s):: David Janes
This presentation is part of a collection of presentations describing the projects, people, and capabilities enhanced by research performed in the Birck Center, and a look at plans for the upcoming year.
Exploring CMOS-Nano Hybrid Technology in Three Dimensions
31 Mar 2008 | | Contributor(s):: Wei Wang
CMOS-nano hybrid technology incorporate the advantages of both traditional CMOS and novel nanowire/nanotube structures, which will enhance future IC performances and create long-term breakthroughs. The CMOS-nano hybrid IC can be efficiently fabricated using the 3D integration approach. This talk...
Nanoelectronic Modeling: Multimillion Atom Simulations, Transport, and HPC Scaling to 23,000 Processors
07 Mar 2008 | | Contributor(s):: Gerhard Klimeck
Future field effect transistors will be on the same length scales as “esoteric” devices such as quantum dots, nanowires, ultra-scaled quantum wells, and resonant tunneling diodes. In those structures the behavior of carriers and their interaction with their environment need to be fundamentally...
What Promises do Nanotubes and Nanowires Hold for Future Nanoelectronics Applications?
18 Feb 2008 | | Contributor(s):: Joerg Appenzeller
Various low-dimensional materials are currently explored for future electronics applications. The common ground for all these structures is that the surface related impact can no longer be ignored – the common approach applied to predict properties of bulk-type three-dimensional (3D) materials....
Ferroelectric BaTiO3 Nanowires: Synthesis, Properties, and Device Applications
12 Feb 2008 | | Contributor(s):: Zhaoyu Wang
One dimensional ferroelectric nanowires have attracted much attention due to its interests in fundamental physics and potential applications in Nanoelectromechanical Systems (NEMS), non-volatile ferroelectric memories, and sensors. Domain structure is the most important property of ferroelectric...
Multiphase Gallium Nitride Nanowires and Nanocircuits
04 Feb 2008 | | Contributor(s):: Virginia M. Ayres
Catalyst-free vapor-solid nanowire growth, a newly described method for the production of nanowires compatible with a wide variety of semiconductor materials, has been used to produce novel multiphase zinc-blende/wurtzite gallium nitride nanowires. Orientation relation-ships within the...
Exploring Physical and Chemical control of molecular conductance: A computational study
31 Jan 2008 | | Contributor(s):: Barry D. Dunietz
Can numerical “experiments” INSPIRE physical experiments?
20 Dec 2007 | | Contributor(s):: Supriyo Datta
This presentation was one of 13 presentations in the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.
An Experimentalists’ Perspective
19 Dec 2007 | | Contributor(s):: Arunava Majumdar
Introduction of MEMS Activity at Nano/Micro System Engineering Lab., Kyoto University
15 Sep 2007 | | Contributor(s):: OSAMU TABATA
We are aiming at the realization of microsystems and nanosystems with novel and unique functions by integrating functional elements in different domains such as mechanics, electronics, chemistry, optics and biotechnology. These micro/nano systems are expected to be novel machines, which will...