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Resources (21-40 of 118)

1. Electro-deposition of Copper on a Filter Template for Growing Nanowires

   02 Dec 2016 | | Contributor(s):: Francis Nguyen, NNCI Nano

   This lab is designed to help students understand the electro-plating process of growing nanowires. This experiment will use an electro-plating process to transfer metal ions in a solution to a template to produce nanowires. The electric field in the solution carries these ions and deposits them...

2. Piezo Nanomaterials and Green Energy

   19 Oct 2016 | | Contributor(s):: Rusen Yang

   This presentation will introduce the fundamental principle of nanogenerator and its potential applications.

3. Modeling Quantum Acceleration (Multi-Band Drift) of Bloch Waves in Nanowires

   24 Mar 2016 | | Contributor(s):: Raghuraj Hathwar, marco saraniti, Stephen M. Goodnick

   IWCE 2015 presentation.  Abstract and more information to be added at a later date.

4. E304 L4.2.2: Nanomaterials - Nanostrucutes (dots, wires)

   18 Mar 2016 | | Contributor(s):: ASSIST ERC

5. Magnetic Nanowires: Revolutionizing Hard Drives, Random Access Memory, & Cancer Treatment

   18 Feb 2016 | | Contributor(s):: Beth Stadler

   This talk will reveal synthesis secrets for nm-control of layer thicknesses, even for difficult alloys, which has enabled studies of magnetization reversal, magneto-elasticity, giant magnetoresistance, and spin transfer torqueswitching. These nanowires will mitigate the ITRS Roadmap’s...

6. Photonic Quantum Computation & Quantum Simulation

   11 Feb 2016 | | Contributor(s):: Philip Walther

   The advantages of the photons makes optical quantum system ideally suited for fundamental quantum physics experiments and a variety of applications in quantum information processing. Here I will briefly review privacy-preserving photonic quantum cloud computing, where quantum information is...

7. Anisotropic Schrödinger Equation Quantum Corrections for 3D Monte Carlo Simulations of Nanoscale Multigate Transistors

   05 Jan 2016 | | Contributor(s):: Karol Kalna, Muhammad Ali A. Elmessary, Daniel Nagy, Manuel Aldegunde

   IWCE 2015 presentation. We incorporated anisotropic 2D Schrodinger equation based quantum corrections (SEQC) that depends on valley orientation into a 3D Finite Element (FE) Monte Carlo (MC) simulation toolbox. The MC toolbox was tested against experimental ID-VG characteristics of the 22 nm gate...

8. Phonon Interactions in Single-Dopant-Based Transistors: Temperature and Size Dependence

   25 Nov 2015 | | Contributor(s):: Marc Bescond, Nicolas Cavassilas, Salim Berrada

   IWCE 2015 presentation. in this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. we use a 3d real-space non-equilibrium green': ; s function (negf) approach where electron-phonon...

9. Mode Space Tight Binding Model for Ultra-Fast Simulations of III-V Nanowire MOSFETs and Heterojunction TFETs

   13 Nov 2015 | | Contributor(s):: Aryan Afzalian, Jun Huang, Hesameddin Ilatikhameneh, Santiago Alonso Perez Rubiano, Tillmann Christoph Kubis, Michael Povolotskyi, Gerhard Klimeck

   IWCE 2015 presentation.  we explore here the suitability of a mode space tight binding algorithm to various iii-v homo- and heterojunction nanowire devices. we show that in iii-v materials, the number of unphysical modes to eliminate is very high compared to the si case previously reported...

10. NEMO5: Why must we treat topological insulator nanowires atomically?

    15 Oct 2015 | | Contributor(s):: Fan Chen, Michael J. Manfra, Gerhard Klimeck, Tillmann Christoph Kubis

    IWCE 2015 presentation.  Abstract and more information to be added at a later date.

11. Nanometer-Scale III-V Electronics: from Quantum-Well Planar MOSFETs to Vertical Nanowire MOSFETs

    05 Oct 2015 | | Contributor(s):: Juses A. del Alamo

    This talk will review recent progress as well as challenges confronting III-V electronics for future logic applications with emphasis on the presenter’s research activities at MIT.

12. Nanomaterial Mechanics Explorer

    30 Jun 2015 | | Contributor(s):: Sam Reeve, Christopher Chow, Michael N Sakano, shuhui tang, Alexis Belessiotis, Mitchell Anthony Wood, Kiettipong Banlusan, Saaketh Desai, Alejandro Strachan

    Simulate dislocation dynamics, crack propagation, nanowire tensile tests, and phase transitions

13. 3D Topological Insulator Nanowire NEGF Simulation on GPU

    23 May 2015 | | Contributor(s):: Gaurav Gupta

    This code developed in C and CUDA simulates the carrier transport in three-dimensional (3D) topological insulator (TI) nanowire, with Bi2Se3 as exemplar material, with or without impurities, edge defects, acoustic phonons and vacancies for semi-infinite or metallic...

14. Optical Properties of Single Coaxial Nanowires

    06 May 2014 | | Contributor(s):: Sarath Ramadurgam, Katherine Elizabeth Hansen, Tzu-ging Lin, Amartya Dutta, sulaiman Abdul-Hadi, Chen Yang

    Computes various optical properties of a single nanowire with up to 2 shell layers using Mie-formalism

15. PAMELA (Pseudospectral Analysis Method with Exchange & Local Approximations)

    23 May 2014 | | Contributor(s):: Bryan M. Wong

    PAMELA (Pseudospectral Analysis Method with Exchange & Local Approximations): calculates electronic energies, densities, wavefunctions, and band-bending diagrams for core-shell nanowires within a self-consistent Schrodinger-Poisson formalism.

16. Efficiency Enhancement for Nanoelectronic Transport Simulations

    01 Feb 2014 | | Contributor(s):: Jun Huang

    PhD thesis of Jun HuangContinual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically important, like energy quantization effects of the narrow channel and the leakage currents due to tunneling....

17. Quantum and Atomistic Effects in Nanoelectronic Transport Devices

    26 Jun 2013 | | Contributor(s):: Neophytos Neophytou

    As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for Semiconductors, (ITRS), structures will evolve from planar devices into devices that include 3D...

18. Device Physics and Simulation of Silicon Nanowire Transistors

    27 Jun 2013 | | Contributor(s):: Jing Wang

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

19. Landauer Approach to Thermoelectrics

    21 Jun 2013 | | Contributor(s):: Changwook Jeong

    Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent material parameters that determine ZT. Recently, several breakthroughs have been reported by applying...

20. [Illinois] CNST 2012: III-V Semiconductor Nanowire Arraybased Transistors

    23 May 2012 | | Contributor(s):: Xiuling Li

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