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A nanowire is a nanostructure, with the diameter of the order of a nanometer. Alternatively, nanowires can be defined as structures that have a thickness or diameter constrained to tens of nanometers or less and an unconstrained length. At these scales, quantum mechanical effects are important.
Learn more about quantum dots from the many resources on this site, listed below. More information on Nanowires can be found here.
Electron Transport in Schottky Barrier CNTFETs
24 Oct 2017 | | Contributor(s):: Igor Bejenari
A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially or linearly decaying function along the channel. The ...
Quantum Coherent Transport in Atoms & Electrons
21 Jun 2017 | | Contributor(s):: Yong P. Chen
I will discuss some recent experimental examples from my lab studying quantum coherent transport and interferometry in electrons as well as cold atoms. For example, phase coherent electron transport and interference around a cylinder realized in a nanowire of topological insulator...
Building a Topological Quantum Computer 101
20 Jun 2017 | | Contributor(s):: Michael Freedman
Michael Freeman shares his perspective on how we should approach building a quantum computer, starting with the mathematical roots and moving through the physics to concrete engineering and materials growth challenges on which success will hinge. He will then discuss a new, enhanced,...
Piezo Nanomaterials and Green Energy
19 Oct 2016 | | Contributor(s):: Rusen Yang
This presentation will introduce the fundamental principle of nanogenerator and its potential applications.
Modeling Quantum Acceleration (Multi-Band Drift) of Bloch Waves in Nanowires
24 Mar 2016 | | Contributor(s):: Raghuraj Hathwar, marco saraniti, Stephen M. Goodnick
IWCE 2015 presentation. Abstract and more information to be added at a later date.
E304 L4.2.2: Nanomaterials - Nanostrucutes (dots, wires)
18 Mar 2016 |
Magnetic Nanowires: Revolutionizing Hard Drives, Random Access Memory, & Cancer Treatment
18 Feb 2016 | | Contributor(s):: Beth Stadler
This talk will reveal synthesis secrets for nm-control of layer thicknesses, even for difficult alloys, which has enabled studies of magnetization reversal, magneto-elasticity, giant magnetoresistance, and spin transfer torqueswitching. These nanowires will mitigate the ITRS Roadmap’s...
Photonic Quantum Computation & Quantum Simulation
11 Feb 2016 | | Contributor(s):: Philip Walther
The advantages of the photons makes optical quantum system ideally suited for fundamental quantum physics experiments and a variety of applications in quantum information processing. Here I will briefly review privacy-preserving photonic quantum cloud computing, where quantum information is...
Anisotropic Schrödinger Equation Quantum Corrections for 3D Monte Carlo Simulations of Nanoscale Multigate Transistors
05 Jan 2016 | | Contributor(s):: Karol Kalna, Muhammad Ali A. Elmessary, Daniel Nagy, Manuel Aldegunde
IWCE 2015 presentation. We incorporated anisotropic 2D Schrodinger equation based quantum corrections (SEQC) that depends on valley orientation into a 3D Finite Element (FE) Monte Carlo (MC) simulation toolbox. The MC toolbox was tested against experimental ID-VG characteristics of the 22 nm...
Phonon Interactions in Single-Dopant-Based Transistors: Temperature and Size Dependence
25 Nov 2015 | | Contributor(s):: Marc Bescond, Nicolas Cavassilas, Salim Berrada
IWCE 2015 presentation. in this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. we use a 3d real-space non-equilibrium green': ; s function (negf) approach where electron-phonon...
Mode Space Tight Binding Model for Ultra-Fast Simulations of III-V Nanowire MOSFETs and Heterojunction TFETs
13 Nov 2015 | | Contributor(s):: Aryan Afzalian, Jun Huang, Hesameddin Ilatikhameneh, Santiago Alonso Perez Rubiano, Tillmann Christoph Kubis, Michael Povolotskyi, Gerhard Klimeck
IWCE 2015 presentation. we explore here the suitability of a mode space tight binding algorithm to various iii-v homo- and heterojunction nanowire devices. we show that in iii-v materials, the number of unphysical modes to eliminate is very high compared to the si case previously reported...
NEMO5: Why must we treat topological insulator nanowires atomically?
15 Oct 2015 | | Contributor(s):: Fan Chen, Michael J. Manfra, Gerhard Klimeck, Tillmann Christoph Kubis
Nanometer-Scale III-V Electronics: from Quantum-Well Planar MOSFETs to Vertical Nanowire MOSFETs
05 Oct 2015 | | Contributor(s):: Juses A. del Alamo
This talk will review recent progress as well as challenges confronting III-V electronics for future logic applications with emphasis on the presenter’s research activities at MIT.
Nanomaterial Mechanics Explorer
30 Jun 2015 | | Contributor(s):: Sam Reeve, Christopher Chow, Michael N Sakano, shuhui tang, Alexis Belessiotis, Mitchell Anthony Wood, Kiettipong Banlusan, Saaketh Desai, Alejandro Strachan
Simulate dislocation dynamics, crack propagation, nanowire tensile tests, and phase transitions
3D Topological Insulator Nanowire NEGF Simulation on GPU
23 May 2015 | | Contributor(s):: Gaurav Gupta
This code developed in C and CUDA simulates the carrier transport in three-dimensional (3D) topological insulator (TI) nanowire, with Bi2Se3 as exemplar material, with or without impurities, edge defects, acoustic phonons and vacancies for semi-infinite or metallic...
Optical Properties of Single Coaxial Nanowires
06 May 2014 | | Contributor(s):: Sarath Ramadurgam, Tzu-ging Lin, Katherine Elizabeth Hansen, Chen Yang
Computes various optical properties of a single nanowire with up to 2 shell layers using Mie-formalism
PAMELA (Pseudospectral Analysis Method with Exchange & Local Approximations)
23 May 2014 | | Contributor(s):: Bryan M. Wong
PAMELA (Pseudospectral Analysis Method with Exchange & Local Approximations): calculates electronic energies, densities, wavefunctions, and band-bending diagrams for core-shell nanowires within a self-consistent Schrodinger-Poisson formalism.
Efficiency Enhancement for Nanoelectronic Transport Simulations
01 Feb 2014 | | Contributor(s):: Jun Huang
PhD thesis of Jun HuangContinual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically important, like energy quantization effects of the narrow channel and the leakage currents due to tunneling....
Quantum and Atomistic Effects in Nanoelectronic Transport Devices
26 Jun 2013 | | Contributor(s):: Neophytos Neophytou
As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for Semiconductors, (ITRS), structures will evolve from planar devices into devices that include 3D...
Device Physics and Simulation of Silicon Nanowire Transistors
27 Jun 2013 | | Contributor(s):: Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...