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VINUTH NAGENDRA
https://nanohub.org/members/134917
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Phonon Interactions in Single-Dopant-Based Transistors: Temperature and Size Dependence
25 Nov 2015 | | Contributor(s):: Marc Bescond, Nicolas Cavassilas, Salim Berrada
IWCE 2015 presentation. in this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. we use a 3d real-space non-equilibrium green': ; s function (negf) approach where electron-phonon...
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Mode Space Tight Binding Model for Ultra-Fast Simulations of III-V Nanowire MOSFETs and Heterojunction TFETs
13 Nov 2015 | | Contributor(s):: Aryan Afzalian, Jun Huang, Hesameddin Ilatikhameneh, Santiago Alonso Perez Rubiano, Tillmann Christoph Kubis, Michael Povolotskyi, Gerhard Klimeck
IWCE 2015 presentation. we explore here the suitability of a mode space tight binding algorithm to various iii-v homo- and heterojunction nanowire devices. we show that in iii-v materials, the number of unphysical modes to eliminate is very high compared to the si case previously reported...
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NEMO5: Why must we treat topological insulator nanowires atomically?
15 Oct 2015 | | Contributor(s):: Fan Chen, Michael J. Manfra, Gerhard Klimeck, Tillmann Christoph Kubis
IWCE 2015 presentation. Abstract and more information to be added at a later date.
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Nanometer-Scale III-V Electronics: from Quantum-Well Planar MOSFETs to Vertical Nanowire MOSFETs
05 Oct 2015 | | Contributor(s):: Juses A. del Alamo
This talk will review recent progress as well as challenges confronting III-V electronics for future logic applications with emphasis on the presenter’s research activities at MIT.
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Nanomaterial Mechanics Explorer
30 Jun 2015 | | Contributor(s):: Sam Reeve, Christopher Chow, Michael N Sakano, shuhui tang, Alexis Belessiotis, Mitchell Anthony Wood, Kiettipong Banlusan, Saaketh Desai, Alejandro Strachan
Simulate dislocation dynamics, crack propagation, nanowire tensile tests, and phase transitions
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3D Topological Insulator Nanowire NEGF Simulation on GPU
23 May 2015 | | Contributor(s):: Gaurav Gupta
This code developed in C and CUDA simulates the carrier transport in three-dimensional (3D) topological insulator (TI) nanowire, with Bi2Se3 as exemplar material, with or without impurities, edge defects, acoustic phonons and vacancies for semi-infinite or metallic...
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Vasan Iyer
https://nanohub.org/members/121985
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Optical Properties of Single Coaxial Nanowires
06 May 2014 | | Contributor(s):: Sarath Ramadurgam, Katherine Elizabeth Hansen, Tzu-ging Lin, Amartya Dutta, sulaiman Abdul-Hadi, Chen Yang
Computes various optical properties of a single nanowire with up to 2 shell layers using Mie-formalism
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PAMELA (Pseudospectral Analysis Method with Exchange & Local Approximations)
23 May 2014 | | Contributor(s):: Bryan M. Wong
PAMELA (Pseudospectral Analysis Method with Exchange & Local Approximations): calculates electronic energies, densities, wavefunctions, and band-bending diagrams for core-shell nanowires within a self-consistent Schrodinger-Poisson formalism.
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Matlab fit of back to back schottky diodes
Q&A|Closed | Responses: 0
Hi everybody,
I am trying to fit I(V) curves for semiconducting nanowires contacted between two metallic electrodes.
My main reference to do this is the following: https://nanohub.org/answers/question/1373
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Efficiency Enhancement for Nanoelectronic Transport Simulations
01 Feb 2014 | | Contributor(s):: Jun Huang
PhD thesis of Jun HuangContinual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically important, like energy quantization effects of the narrow channel and the leakage currents due to tunneling....
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JunSik Yoon
Bachelor's degree of electrical engineering at POSTECH, 2012.Currently, pursuing to receiveDoctor's degree of creative IT engineering at POSTECH, 2016.My major is "characterization of...
https://nanohub.org/members/85695
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NGO KHOA QUANG
https://nanohub.org/members/84038
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Quantum and Atomistic Effects in Nanoelectronic Transport Devices
26 Jun 2013 | | Contributor(s):: Neophytos Neophytou
As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for Semiconductors, (ITRS), structures will evolve from planar devices into devices that include 3D...
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Device Physics and Simulation of Silicon Nanowire Transistors
27 Jun 2013 | | Contributor(s):: Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...
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Landauer Approach to Thermoelectrics
21 Jun 2013 | | Contributor(s):: Changwook Jeong
Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent material parameters that determine ZT. Recently, several breakthroughs have been reported by applying...
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Abdelmalek Benkouider
Over five years of experience in scientific research within academic institutes and industrial R&D departments, with strong theoretical and experimental skills in nanotechnology. Demonstrated...
https://nanohub.org/members/83692
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[Illinois] CNST 2012: III-V Semiconductor Nanowire Arraybased Transistors
23 May 2012 | | Contributor(s):: Xiuling Li
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[Illinois] Bio-sensing Summer Series 2010: Biomimetic Cilia Sensor Arrays Using Electrochemically Synthesized Magnetic Nanowires
07 Feb 2013 | | Contributor(s):: Beth Stadler
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