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A nanowire is a nanostructure, with the diameter of the order of a nanometer. Alternatively, nanowires can be defined as structures that have a thickness or diameter constrained to tens of nanometers or less and an unconstrained length. At these scales, quantum mechanical effects are important.
Learn more about quantum dots from the many resources on this site, listed below. More information on Nanowires can be found here.
Animations of magnetic QCA operation
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21 Oct 2007 | | Contributor(s):: Dmitri Nikonov, George Bourianoff
Animations of an inverter and a majority gate operation for QCA logic for the paper"Simulation of highly idealized, atomic scale MQCA logic circuits"by Dmitri E. Nikonov, George I. Bourianoff, Paolo A. GarginiMore detailed description to follow.
Introduction of MEMS Activity at Nano/Micro System Engineering Lab., Kyoto University
15 Sep 2007 | | Contributor(s):: OSAMU TABATA
We are aiming at the realization of microsystems and nanosystems with novel and unique functions by integrating functional elements in different domains such as mechanics, electronics, chemistry, optics and biotechnology. These micro/nano systems are expected to be novel machines, which will...
MCW07 Modeling Charging-based Switching in Molecular Transport Junctions
23 Aug 2007 | | Contributor(s):: Sina Yeganeh, , Mark Ratner
We will discuss several proposed explanations for the switching and negative differential resistance behavior seen in some molecular junctions. It is shown that a proposed polaron model is successful in predicting both hysteresis and NDR behavior, and the model is elaborated with image charge...
Orbital Mediated Tunneling in a New Unimolecular Rectifier
25 May 2007 | | Contributor(s):: Robert Metzger, NCN at Northwestern University
In 1997 we showed that hexadecylquinolinium tricyanoquinodimethanide is a unimolecular rectifier, by scanning tunneling microscopy and also as a Langmuir-Blodgett (LB) monolayer, sandwiched between Al electrodes. We have now seen rectification in a new molecule: this rectification can be...
Multi-gate Nanowire FET
18 May 2007 | | Contributor(s):: Mincheol Shin
3D simulator for silicon nanowire field effect transistors with multiple gates
Electron Emission from Nanoscale Carbon Materials
15 May 2007 | | Contributor(s):: Timothy S Fisher
Prior studies on electron emission show possibly beneficial effects ofnanoscale phenomena on energy-conversion characteristics. For example,recent work has shown that the electric field around a nanoscale fieldemission device can increase the average energy of emitted electrons. Weconsider here...
BNC Annual Research Symposium: Nanoscale Energy Conversion
23 Apr 2007 | | Contributor(s):: Timothy S Fisher
This presentation is part of a collection of presentations describing the projects, people, and capabilities enhanced by research performed in the Birck Center, and a look at plans for the upcoming year.
CMOS-Nano Hybrid Technology: a nanoFPGA-related study
04 Apr 2007 | | Contributor(s):: Wei Wang
Dr. Wei Wang received his PhD degree in 2002 from Concordia University, Montreal, QC, Canada, in Electrical and Computer Engineering. From 2002 to 2004, he was an assistant professor in the Department of Electrical and Computer Engineering, the University of Western Ontario, London, ON, Canada....
Is Seeing Believing? How to Think Visually and Analyze with Both Your Eyes and Brain
26 Mar 2007 | | Contributor(s)::
This presentation will cover the basic techniques, and some of the available tools, for visualization, and will explain how to avoid miscommunicating information from visualizations.
What Can the TEM Tell You About Your Nanomaterial?
26 Feb 2007 | | Contributor(s):: Eric Stach
In this tutorial, I will present a brief overview of the ways that transmission electron microscopy can be used to characterize nanoscale materials. This tutorial will emphasize what TEM does well, as well where difficulties arise. In particular, I will discuss in an overview manner how...
Atomistic Alloy Disorder in Nanostructures
26 Feb 2007 | | Contributor(s):: Gerhard Klimeck
Electronic structure and quantum transport simulations are typically performed in perfectly ordered semiconductor structures. Bands and modes are defined resulting in quantized conduction and discrete states. But what if the material is fundamentally disordered? What if the disorder is at the...
SPMW Nanomechanics: from nanotechnology to biology
12 Dec 2006 | | Contributor(s)::
The development of new materials with size of few nanometers has opened a new field of scientific and technological research. The goal is to develop faster and better communication systems and transports, as well as smarter and smaller nanodevices for biomedical applications. To reach these...
Materials strength: does size matter? nanoMATERIALS simulation toolkit tutorial
01 Feb 2007 | | Contributor(s):: Alejandro Strachan
Molecular dynamics (MD) is a powerful technique to characterize the fundamental, atomic-level processes that govern materials behavior and is playing an important role in our understanding of the new phenomena that arises in nanoscale and nanostructured materials and result in their unique...
Surprises on the nanoscale: Plasmonic waves that travel backward and spin birefringence without magnetic fields
08 Jan 2007 | | Contributor(s)::
As nanonphotonics and nanoelectronics are pushed down towards the molecular scale, interesting effects emerge. We discuss how birefringence (different propagation of two polarizations) is manifested and could be useful in the future for two systems: coherent plasmonic transport of near-field...
A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
30 Oct 2006 | | Contributor(s):: , POLIZZI ERIC, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a three-dimensional quantum mechanical simulation...
Device Physics and Simulation of Silicon Nanowire Transistors
28 Sep 2006 | | Contributor(s)::
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...
Investigation of the Electrical Characteristics of Triple-Gate FinFETs and Silicon-Nanowire FETs
08 Aug 2006 | | Contributor(s):: Monica Taba, Gerhard Klimeck
Electrical characteristics of various Fin field-effect transistors (FinFETs) and silicon-nanowires were analyzed and compared using a modified three-dimensional self-consistent quantum-mechanical simulator in order to investigate device performance. FinFETs have been proposed to fulfill the...
06 Aug 2006 | | Contributor(s):: Margarita Shalaev
DNA is a relatively inexpensive and ubiquitous material that can be used as a scaffold for constructing nanowires. Our research focuses on the manufacturing of DNA-templated, magnetic nanowires. This is accomplished by synthesizing positively-charged metal nanoparticles that self-assemble along...