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A nanowire is a nanostructure, with the diameter of the order of a nanometer. Alternatively, nanowires can be defined as structures that have a thickness or diameter constrained to tens of nanometers or less and an unconstrained length. At these scales, quantum mechanical effects are important.
Learn more about quantum dots from the many resources on this site, listed below. More information on Nanowires can be found here.
Band Structure Lab Demonstration: Bulk Strain
12 Jun 2009 | Animations | Contributor(s): Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.
OMEN Nanowire Demonstration: Nanowire Simulation and Analysis
11 Jun 2009 | Animations | Contributor(s): Gerhard Klimeck, Benjamin P Haley
This video shows the simulation and analysis of a nanowire using OMEN Nanowire. Several powerful analytic features of this tool are demonstrated.
KP Nanowire/UTB FET
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13 Apr 2009 | Tools | Contributor(s): Mincheol Shin
Simulate Nanowire/UTB FETs Using KP method
OMEN Nanowire: First-Time User Guide
23 Feb 2009 | Teaching Materials | Contributor(s): SungGeun Kim, Benjamin P Haley, Mathieu Luisier, Saumitra Raj Mehrotra, Gerhard Klimeck
This is the first-time user guide for OMEN Nanowire. In addition to showing how the tool operates, it briefly explains what the OMEN Nanowire is, what it can do, and the input and output...
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15 Dec 2008 | Tools | Contributor(s): SungGeun Kim, Mathieu Luisier, Benjamin P Haley, Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck, Hesameddin Ilatikhameneh
Full-band 3D quantum transport simulation in nanowire structure
Lecture 2: Thresholds, Islands, and Fractals
04 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam
Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via...
Lecture 1: Percolation in Electronic Devices
Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the...
03 Nov 2008 | Courses | Contributor(s): Muhammad A. Alam
The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon-...
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
08 Aug 2008 | Tools | Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
Can we define unique effective masses in Si nanowires?
08 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This exercise teaches the users that for small nanostructures the concept of the effective mass becomes vague and in order to properly describe nanostructures one has to take into account the...
Some Important Aspects of the Chemistry of Nanomaterials
01 Jul 2008 | Online Presentations | Contributor(s): C.N.R. Rao
Keynote address for the launch of the Center for Analytical Instrumentation Development.
BNC Annual Research Review: Thin-Film Electronics using Nanowire Transistors
06 Jun 2008 | Online Presentations | Contributor(s): David Janes
This presentation is part of a collection of presentations describing the projects, people, and capabilities enhanced by research performed in the Birck Center, and a look at plans for the...
Which tool can I used to do harmonic analysis of a ZnO nanowire?
Closed | Responses: 1
I am trying to study the applied voltage-displacement relationship for a ZnO nanowire. In the end I want to find...
The electrical field from the gate of CNFET can not affect the transistor.
Open | Responses: 2
I tried to fabricate the Carbon nanotube field effect transistor (CNFET) for around half a year, however, none of them is working till now. The main problem was the source to...
Nanowire: First-Time User Guide
06 May 2008 | Teaching Materials | Contributor(s): Gerhard Klimeck, Saumitra Raj Mehrotra
Nanowire is a simulation tool for silicon nanowire FET's in the nanometer regime (diameter
Basma Mohamad Zeineddine EL ZEIN
MuGFET: First-Time User Guide
28 Apr 2008 | Teaching Materials | Contributor(s): SungGeun Kim, Sriraman Damodaran, Benjamin P Haley, Gerhard Klimeck
MuGFET is a simulation tool for nano-scale multi-gate FET structures.
This document provides instructions on how to use MuGFET.
MuGFET users can use also the PROPHET or the PADRE tool. Either...
Exploring CMOS-Nano Hybrid Technology in Three Dimensions
31 Mar 2008 | Online Presentations | Contributor(s): Wei Wang
CMOS-nano hybrid technology incorporate the advantages of both traditional CMOS and novel nanowire/nanotube structures, which will enhance future IC performances and create long-term...
31 Mar 2008 | Tools | Contributor(s): Sanket S Mahajan, Ganesh Subbarayan, Xufeng Wang
Code to perform Molecular Dynamics (MD) Simulations
Nanoelectronic Modeling: Multimillion Atom Simulations, Transport, and HPC Scaling to 23,000 Processors
07 Mar 2008 | Online Presentations | Contributor(s): Gerhard Klimeck
Future field effect transistors will be on the same length scales as “esoteric” devices such as quantum dots,
nanowires, ultra-scaled quantum wells, and resonant tunneling diodes. In those...