
3D Topological Insulator Nanowire NEGF Simulation on GPU
28 May 2015   Contributor(s):: Gaurav Gupta
This code developed in C and CUDA simulates the carrier transport in threedimensional (3D) topological insulator (TI) nanowire, with Bi2Se3 as exemplar material, with or without impurities, edge defects, acoustic phonons and vacancies for semiinfinite or metallic...

Any models for nano crossbars?
Closed  Responses: 1
I am looking for some kind of SPICE models for nano crossbars; specifically, some models for nanowires, nwfets, crosspoints. However, even though there are models for CNFETs, I could not find...
https://nanohub.org/answers/question/350

Changing parameter
Open  Responses: 1
Dear all
I notice the simulated device at this site is siliconbased device. I would like to simulate germanium nanowire FET. Could I do it by only changing the parameters which are...
https://nanohub.org/answers/question/385

formation of CNT
Open  Responses: 1
Dear All,
Would you please tell me why Carbon goes for Nanotubes whereas Silicon (and most other elements) prefer solid nanowires? Is there any dependence on the type of hybridization...
https://nanohub.org/answers/question/615

Germanium nanowire FET
Open  Responses: 1
Dear Sir/ Madam
Let me introduce myself first. My name is Simanullang. I am currently studying for master’s program. I am planning to do research on nanowire FET and I am going to...
https://nanohub.org/answers/question/384

Hallo Im a newbie! Can I simulate and modeling nanowire on Nanohub? Which properties I can simulate? Is there any tutorial how I can do this? Thank you
Closed  Responses: 1
https://nanohub.org/answers/question/627

How can we make the programming of nano wires ??????
Closed  Responses: 0
How to create a nano wires by using oops
https://nanohub.org/answers/question/519

Matlab fit of back to back schottky diodes
Closed  Responses: 0
Hi everybody,
I am trying to fit I(V) curves for semiconducting nanowires contacted between two metallic electrodes.
My main reference to do this is the following: https://nanohub.org/answers/question/1373

The electrical field from the gate of CNFET can not affect the transistor.
Open  Responses: 2
Hi all,
I tried to fabricate the Carbon nanotube field effect transistor (CNFET) for around half a year, however, none of them is working till now. The main problem was the source to...
https://nanohub.org/answers/question/60

Which tool can I used to do harmonic analysis of a ZnO nanowire?
Closed  Responses: 1
I am trying to study the applied voltagedisplacement relationship for a ZnO nanowire. In the end I want to find...
https://nanohub.org/answers/question/67

A 3D Quantum Simulation of Silicon Nanowire FieldEffect Transistors
17 Jan 2006   Contributor(s):: Mincheol Shin
As the device size of the conventional planar metal oxide semiconductor field effect transistor(MOSFET) shrinks into the deep sub micron regime, the device performance significantly degradesmainly due to the shortchannel effect. The silicon nanowire fieldeffect transistor (SNWFET) isconsidered...

A CNTFETBased Nanowired Induction TwoWay Transducers
05 Sep 2012   Contributor(s):: Rostyslav Sklyar
A complex of the induction magnetic field twoway nanotransducers of the different physical values for both the external and implantable interfaces in a wide range of arrays are summarized. Implementation of the nanowires allows reliable transducing of the biosignals' partials and bringing of...

A ThreeDimensional Quantum Simulation of Silicon Nanowire Transistors with the EffectiveMass Approximation
30 Oct 2006   Contributor(s):: Jing Wang, POLIZZI ERIC, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a threedimensional quantum mechanical simulation...

ABACUS  Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008   Contributor(s):: Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
Onestopshop for teaching semiconductor device education

Abdelmalek Benkouider
Over five years of experience in scientific research within academic institutes and industrial R&D departments, with strong theoretical and experimental skills in nanotechnology. Demonstrated...
https://nanohub.org/members/83692

Adrian Suteu
Source Graphene is the first based Romanian company focused on producing and supplying graphene oxide in water dispersion. Source Graphene has the capacity to obtain high, cost effective amounts of...
https://nanohub.org/members/175145

AlAmin Sheikh
https://nanohub.org/members/160887

An Experimentalists’ Perspective
19 Dec 2007   Contributor(s):: Arunava Majumdar
This presentation was one of 13 presentations in the oneday forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.

Animations of magnetic QCA operation
21 Oct 2007   Contributor(s):: Dmitri Nikonov, George Bourianoff
Animations of an inverter and a majority gate operation for QCA logic for the paper"Simulation of highly idealized, atomic scale MQCA logic circuits"by Dmitri E. Nikonov, George I. Bourianoff, Paolo A. GarginiMore detailed description to follow.

Anisotropic Schrödinger Equation Quantum Corrections for 3D Monte Carlo Simulations of Nanoscale Multigate Transistors
16 Dec 2015   Contributor(s):: Karol Kalna, Muhammad Ali A. Elmessary, Daniel Nagy, Manuel Aldegunde
IWCE 2015 presentation. We incorporated anisotropic 2D Schrodinger equation based quantum corrections (SEQC) that depends on valley orientation into a 3D Finite Element (FE) Monte Carlo (MC) simulation toolbox. The MC toolbox was tested against experimental IDVG characteristics of the 22 nm gate...