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A nanowire is a nanostructure, with the diameter of the order of a nanometer. Alternatively, nanowires can be defined as structures that have a thickness or diameter constrained to tens of nanometers or less and an unconstrained length. At these scales, quantum mechanical effects are important.
Learn more about quantum dots from the many resources on this site, listed below. More information on Nanowires can be found here.
3D Topological Insulator Nanowire NEGF Simulation on GPU
28 May 2015 | | Contributor(s):: Gaurav Gupta
This code developed in C and CUDA simulates the carrier transport in three-dimensional (3D) topological insulator (TI) nanowire, with Bi2Se3 as exemplar material, with or without impurities, edge defects, acoustic phonons and vacancies for semi-infinite or metallic...
Any models for nano crossbars?
Closed | Responses: 1
I am looking for some kind of SPICE models for nano crossbars; specifically, some models for nanowires, nwfets, crosspoints. However, even though there are models for CNFETs, I could not find...
Open | Responses: 1
I notice the simulated device at this site is silicon-based device. I would like to simulate germanium nanowire FET. Could I do it by only changing the parameters which are...
formation of CNT
Would you please tell me why Carbon goes for Nanotubes whereas Silicon (and most other elements) prefer solid nanowires? Is there any dependence on the type of hybridization...
Germanium nanowire FET
Dear Sir/ Madam
Let me introduce myself first. My name is Simanullang. I am currently studying for master’s program. I am planning to do research on nanowire FET and I am going to...
Hallo Im a newbie! Can I simulate and modeling nanowire on Nanohub? Which properties I can simulate? Is there any tutorial how I can do this? Thank you
How can we make the programming of nano wires ??????
Closed | Responses: 0
How to create a nano wires by using oops
Matlab fit of back to back schottky diodes
I am trying to fit I(V) curves for semiconducting nanowires contacted between two metallic electrodes.
My main reference to do this is the following: https://nanohub.org/answers/question/1373
The electrical field from the gate of CNFET can not affect the transistor.
Open | Responses: 2
I tried to fabricate the Carbon nanotube field effect transistor (CNFET) for around half a year, however, none of them is working till now. The main problem was the source to...
Which tool can I used to do harmonic analysis of a ZnO nanowire?
I am trying to study the applied voltage-displacement relationship for a ZnO nanowire. In the end I want to find...
A 3D Quantum Simulation of Silicon Nanowire Field-Effect Transistors
out of 5 stars
17 Jan 2006 | | Contributor(s):: Mincheol Shin
As the device size of the conventional planar metal oxide semiconductor field effect transistor(MOSFET) shrinks into the deep sub micron regime, the device performance significantly degradesmainly due to the short-channel effect. The silicon nanowire field-effect transistor (SNWFET) isconsidered...
A CNTFET-Based Nanowired Induction Two-Way Transducers
05 Sep 2012 | | Contributor(s):: Rostyslav Sklyar
A complex of the induction magnetic field two-way nanotransducers of the different physical values for both the external and implantable interfaces in a wide range of arrays are summarized. Implementation of the nanowires allows reliable transducing of the biosignals' partials and bringing of...
A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
30 Oct 2006 | | Contributor(s):: , POLIZZI ERIC, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a three-dimensional quantum mechanical simulation...
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008 | | Contributor(s):: Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
An Experimentalists’ Perspective
19 Dec 2007 | | Contributor(s):: Arunava Majumdar
This presentation was one of 13 presentations in the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.
Animations of magnetic QCA operation
21 Oct 2007 | | Contributor(s):: Dmitri Nikonov, George Bourianoff
Animations of an inverter and a majority gate operation for QCA logic for the paper"Simulation of highly idealized, atomic scale MQCA logic circuits"by Dmitri E. Nikonov, George I. Bourianoff, Paolo A. GarginiMore detailed description to follow.
Anisotropic Schrödinger Equation Quantum Corrections for 3D Monte Carlo Simulations of Nanoscale Multigate Transistors
16 Dec 2015 | | Contributor(s):: Karol Kalna, Muhammad Ali A. Elmessary, Daniel Nagy, Manuel Aldegunde
IWCE 2015 presentation. We incorporated anisotropic 2D Schrodinger equation based quantum corrections (SEQC) that depends on valley orientation into a 3D Finite Element (FE) Monte Carlo (MC) simulation toolbox. The MC toolbox was tested against experimental ID-VG characteristics of the 22 nm gate...