
BTI Simulator for TwoStage Model
27 Jun 2017   Contributor(s):: Rakesh P Rao, Narendra Parihar, Souvik Mahapatra
This simulator calculates the kinetics associated with trapping and trap generation during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si pMOSFETs. The calculations are based on the"TwoStage Model". The simulator can calculate threshold voltage...

BTI Simulator for TripleWell Model
27 Oct 2016   Contributor(s):: Narendra Parihar, Rakesh P Rao, Sujay Desai, Souvik Mahapatra
This simulator calculates the kinetics associated with trap generation during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si pMOSFETs. The calculations are based on the"TripleWell Model". The simulator can calculate threshold voltage shift due to...

BTI Simulator for Gatesided Hydrogen Release (a.k.a DispersiveReaction) Model
17 Oct 2016   Contributor(s):: Narendra Parihar, Rakesh P Rao, Souvik Mahapatra
This simulator calculates the kinetics associated with hydrogen release from the Gate during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si pMOSFETs. The calculations are based on the"Gatesided Hydrogen Release (a.k.a DispersiveReaction) Model"....

BTI Simulator for MultiState Extended Nonradiative Multiphonon Model (a.ka. MultiStateModel)
26 Sep 2016   Contributor(s):: Rakesh P Rao, Narendra Parihar, Sujay Desai, Souvik Mahapatra
This simulator calculates the kinetics associated with hole trapping in preexisting gate insulator traps during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si pMOSFETs. The calculations are based on the"MultiState Extended Nonradiative Multiphonon...

BTI Simulator for Two Well Nonradiative Multiphonon Model
06 Sep 2016   Contributor(s):: Rakesh P Rao, Narendra Parihar, Sujay Desai, Souvik Mahapatra
This simulator calculates the kinetics associated with hole trapping in preexisting gate insulator traps during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si pMOSFETs. The calculations are based on the"Two Well Nonradiative Multiphonon Model"....

BTI Simulator for Two Well Thermionic Model
29 Aug 2016   Contributor(s):: Rakesh P Rao, Narendra Parihar, Sujay Desai, Souvik Mahapatra
This simulator calculates the kinetics associated with hole trapping in preexisting gate insulator traps during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si pMOSFETs. The calculations are based on the "Two Well Thermionic Model". The simulator can...

On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects
09 Mar 2016   Contributor(s):: Yannick Wimmer, Wolfgang Goes
IWCE Presentation. Hole trapping in oxide defects in the gate insulator of MOSFET transistors has been linked to a wide range of phenomena like random telegraph noise, 1/f noise, bias temperature instability (BTI), stressinduced leakage current and hot carrier degradation [1–5]....

ECE 695A Lecture 21R: Review Questions
12 Mar 2013   Contributor(s):: Muhammad Alam
Review Questions:What is the name of the failure distribution that we expect for thin oxides?For thin oxides, is PMOS or NMOS more of a concern in modern transistors?What is DBIE? When does it occur? Can the transistor be still functional ?In what ways is TDDB compare with NBTI and HCI...

ECE 695A Lecture 19R: Review Questions
04 Mar 2013   Contributor(s):: Muhammad Alam
Review Questions::If a signal disappears from ESR because of negativeU configuration, can it be detected by SDR or EDSR methods?What is the relationship between Gauss and Tesla as units of magnetic field?Was the original SDR method for bulk or interface traps?What is the relationship between...

ECE 695A Lecture 18R: Review Questions
01 Mar 2013   Contributor(s):: Muhammad Alam
Review Questions:Between DCIV and CP methods, which one is easier and why?In what ways are CP and DCIV methods better at characterizing traps compared to CV methods?What are the problems of using CP, DCIV, CV methods for NBTI measurements?Which method does not suffer from the same problem as...

ECE 695A Lecture 13R: Review Questions
19 Feb 2013   Contributor(s):: Muhammad Alam
Review Questions:Both SiH and SiO are involved in HCI degradation. Give two evidences.Why doesn’t HCI occur during NBTI stress condition?I suggested that HCI curve can shifted horizontally to form a universal curve, do you believe that I can do a corresponding vertical shift to form the...

ECE 695A Lecture 11R: Review Questions
08 Feb 2013   Contributor(s):: Muhammad Alam
Review Questions:Does Einstein relationship hold for activated diffusion?People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you support the argument?What assumption did I make regarding diffusion of H in SiO2 that makes the derivation...

ECE 695A Lecture 10A: Appendix  Reflection on RD Equation
08 Feb 2013   Contributor(s):: Muhammad Alam

ECE 695A Lecture 12: Field Dependence of NBTI
08 Feb 2013   Contributor(s):: Muhammad Alam
Outline:Background: Field dependent degradationComponents of fielddependent dissociation:Interpreting experimentsVoltage acceleration factorsConclusion

ECE 695A Lecture 12R: Review Questions
08 Feb 2013   Contributor(s):: Muhammad Alam
Review Questions:Explain the difference between local field and global field within an oxide. Explain physically why electric field decreases bond strength.How does the dissociation process becomes nonArrhenius?Do you think the diffusion and repassivation will also become nonArrhenius when...

ECE 695A Lecture 9R: Review Questions
08 Feb 2013   Contributor(s):: Muhammad Alam
Review Questions:Does NBTI powerexponent depend on voltage or temperature?Do you expect the NBTI powerexponent to be larger or smaller if trapping is important?How does one know that the diffusing species is neutral?How would the timeexponent different for a surround gate MOSFET vs. planar...

ECE 695A Lecture 11: Temperature Dependence of NBTI
07 Feb 2013   Contributor(s):: Muhammad Alam
Outline:Review: Temperature activation & NBTITemperature dependent forward/reverse ratesTemperature dependence of diffusion coefficientMaterial dependence of activation energyConclusion

ECE 695A Lecture 10: NBTI Time Dependence  Frequency and Duty Cycle Dependencies
06 Feb 2013   Contributor(s):: Muhammad Alam
Outline:NBTI stress and relaxation by RD modelFrequency independence and lifetime projectionDuty cycle dependenceThe magic of measurementConclusions

ECE 695A Lecture 9: NBTI Time Dependence  Stress Phase
06 Feb 2013   Contributor(s):: Muhammad Alam
Outline:Background: Timedependent degradationThe ReactionDiffusion modelApproximate solution to RD model in stress phaseDegradation free transistorsConclusions

ECE 695A Lecture 8: Phenomenological Observations for NBTI
01 Feb 2013   Contributor(s):: Muhammad Alam
Outline:Qualitative observationsTime, voltage, temperature dependenciesMaterial dependenceCircuit implications