Tags: NBTI

All Categories (1-20 of 27)

  1. Ahmad Ehteshamul Islam

    Ahmad Ehteshamul Islam is a Research Scientist at Soft Matter Materials Branch in Materials and Manufacturing Directorate of Air Force Research Laboratory, Dayton, Ohio. He obtained Ph.D. degree...

    https://nanohub.org/members/9615

  2. BTI Simulator for Gate-sided Hydrogen release (Dispersive-Reaction) Model

    17 Oct 2016 | Downloads | Contributor(s): Narendra Parihar, Rakesh P Rao, Souvik Mahapatra

    This simulator calculates the kinetics associated with hydrogen release from the Gate during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The...

    https://nanohub.org/resources/24943

  3. BTI Simulator for Multi-State Model

    26 Sep 2016 | Downloads | Contributor(s): Rakesh P Rao, Narendra Parihar, Sujay Desai, Souvik Mahapatra

    This simulator calculates the kinetics associated with hole trapping in pre-existing gate insulator traps during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si...

    https://nanohub.org/resources/24942

  4. BTI Simulator for Triple-Well Model

    27 Oct 2016 | Downloads | Contributor(s): Narendra Parihar, Rakesh P Rao, Sujay Desai, Souvik Mahapatra

    This simulator calculates the kinetics associated with trap generation during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si p-MOSFETs. The calculations are...

    https://nanohub.org/resources/24944

  5. BTI Simulator for Two Well Multiphonon Model

    06 Sep 2016 | Downloads | Contributor(s): Rakesh P Rao, Narendra Parihar, Sujay Desai, Souvik Mahapatra

    This simulator calculates the kinetics associated with hole trapping in pre-existing gate insulator traps during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si...

    https://nanohub.org/resources/24893

  6. BTI Simulator for Two Well Thermionic Model

    29 Aug 2016 | Downloads | Contributor(s): Rakesh P Rao, Narendra Parihar, Sujay Desai, Souvik Mahapatra

    This simulator calculates the kinetics associated with hole trapping in pre-existing gate insulator traps during Negative Bias Temperature Instability (NBTI) in SiO2 (or SiON) based Si...

    https://nanohub.org/resources/24873

  7. ECE 695A Lecture 10: NBTI Time Dependence -- Frequency and Duty Cycle Dependencies

    06 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: NBTI stress and relaxation by R-D model Frequency independence and lifetime projection Duty cycle dependence The magic of measurement Conclusions

    https://nanohub.org/resources/16668

  8. ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation

    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    https://nanohub.org/resources/16787

  9. ECE 695A Lecture 11: Temperature Dependence of NBTI

    07 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Review: Temperature activation & NBTI Temperature dependent forward/reverse rates Temperature dependence of diffusion coefficient Material dependence of activation...

    https://nanohub.org/resources/16774

  10. ECE 695A Lecture 11R: Review Questions

    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Does Einstein relationship hold for activated diffusion? People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you...

    https://nanohub.org/resources/16786

  11. ECE 695A Lecture 12: Field Dependence of NBTI

    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background: Field dependent degradation Components of field-dependent dissociation: Interpreting experiments Voltage acceleration factors Conclusion

    https://nanohub.org/resources/16789

  12. ECE 695A Lecture 12R: Review Questions

    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Explain the difference between local field and global field within an oxide. Explain physically why electric field decreases bond strength. How does the dissociation...

    https://nanohub.org/resources/16790

  13. ECE 695A Lecture 13R: Review Questions

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Both SiH and SiO are involved in HCI degradation. Give two evidences. Why doesn’t HCI occur during NBTI stress condition? I suggested that HCI curve can shifted...

    https://nanohub.org/resources/16888

  14. ECE 695A Lecture 18R: Review Questions

    01 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Between DCIV and CP methods, which one is easier and why? In what ways are CP and DCIV methods better at characterizing traps compared to C-V methods? What are the...

    https://nanohub.org/resources/17159

  15. ECE 695A Lecture 19R: Review Questions

    04 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions:: If a signal disappears from ESR because of negative-U configuration, can it be detected by SDR or EDSR methods? What is the relationship between Gauss and Tesla as units...

    https://nanohub.org/resources/17196

  16. ECE 695A Lecture 21R: Review Questions

    12 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: What is the name of the failure distribution that we expect for thin oxides? For thin oxides, is PMOS or NMOS more of a concern in modern transistors? What is DBIE? When...

    https://nanohub.org/resources/17249

  17. ECE 695A Lecture 8: Phenomenological Observations for NBTI

    01 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Qualitative observations Time, voltage, temperature dependencies Material dependence Circuit implications

    https://nanohub.org/resources/16665

  18. ECE 695A Lecture 8R: Review Questions

    01 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    What is the distinction between BTI and NBTI phenomena? What does it mean that a process is thermally activated? What is the difference between parametric failure and catastrophic failure?...

    https://nanohub.org/resources/16666

  19. ECE 695A Lecture 9: NBTI Time Dependence -- Stress Phase

    06 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background: Time-dependent degradation The Reaction-Diffusion model Approximate solution to R-D model in stress phase Degradation free transistors Conclusions

    https://nanohub.org/resources/16667

  20. ECE 695A Lecture 9R: Review Questions

    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Does NBTI power-exponent depend on voltage or temperature? Do you expect the NBTI power-exponent to be larger or smaller if trapping is important? How does one know that...

    https://nanohub.org/resources/16778