Tags: NCN Transistor @ 75

Description

1st transistorIn celebration of the 75th anniversary of the invention of the transistor by John Bardeen, Walter Brattain and William Shockley while at Bell Labs in Murraray Hill, New Jersey, nanoHUB has curated a collection of transistor-related nanoHUB resources including courses, simulation tools, presentations, and compact models.

Transistor @ 75 information page.

Resources (1-20 of 30)

  1. Opening Remarks & Transistors in the 1950s

    02 Feb 2023 | | Contributor(s):: Mark Lundstrom

    Opening Remarks by Mark Lundstrom and recorded message by US Senator Todd Young.

  2. The Transistor at 75

    02 Feb 2023 | | Contributor(s):: Mark Lundstrom, Michael J. Manfra, Muhammad A. Alam, Ekaterina Babintseva

    Purdue celebrates the 75th anniversary of the invention of the transistor.

  3. Birth of the Transistor: Bell Labs, Purdue, and the Second World War

    02 Feb 2023 | | Contributor(s):: Michael J. Manfra

    Semiconductors at Purdue in the 1940’s and the invention of the transistor at Bell Labs.

  4. From Apollo to Apple: How a Purdue Alum, Mohamed Atalla, Started Moore's Law and Transformed the World

    02 Feb 2023 | | Contributor(s):: Muhammad A. Alam

    The Silicon MOSFET, a better transistor. Demonstration of the 1960 silicon MOSFET (metal-oxide-semiconductor field-effect transistor), the mainstay of today’s electronics, which was co-invented by Purdue alumnus Mohamed M. Atalla at Bell Labs.

  5. Computers in Space: Transistors in the Age of Apollo

    02 Feb 2023 | | Contributor(s):: Ekaterina Babintseva

    The role of transistors in the race to the moon.

  6. Fractionalization of Charge and Statistics in Two Dimensions

    14 Dec 2022 | | Contributor(s):: Michael J. Manfra

    This lecture will focus on the development of experiments that allow the first direct observation of anyonic braiding statistics in the fractional quantum Hall regime. The connection between development of new theoretical concepts and the behavior of a humble transistor will be emphasized.

  7. A Single Atom Transistor: The Ultimate Scaling Limit – Entry into Quantum Computing

    14 Oct 2020 | | Contributor(s):: Gerhard Klimeck

    50th European Solid-State Device Research Conference

  8. Reflections on the Past, Present, and Future of Device Research

    09 Sep 2020 | | Contributor(s):: Mark Lundstrom

    Plenary talk

  9. Moore’s Law Extension and Beyond

    19 Nov 2018 | | Contributor(s):: Peide "Peter" Ye

    In his talk, Ye will review his research efforts at Purdue on materials, structures and device architecture to support the microelectronic industry and extend Moore’s Law. The goal of the research is that it will lead to smarter, ubiquitous computing technology and keep us healthier,...

  10. A Tutorial Introduction to Negative-­Capacitor Landau Transistors: Perspectives on the Road Ahead

    04 Dec 2015 | | Contributor(s):: Muhammad A. Alam

    In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NC-FET is just a special case of a much broader class of phase-change devices and systems (e.g., transistors, memories, MEMS, logic-in-memory...

  11. High-Frequency Carbon Nanotube Transistors: Fabrication, Characterization, and Compact Modeling

    14 Jan 2015 | | Contributor(s):: Martin Claus

    The talk covers different aspects in the manufacturing of high-frequency CNTFETs, electrical device characterization and compact modeling of CNTFETs. The applicability of the semi physics-based compact model CCAM for designing digital and analog HF circuits is shown. In particular, the model...

  12. The MVS Nanotransistor Model: A Primer

    26 Nov 2014 | | Contributor(s):: Mark Lundstrom

    In this talk, I will present a gentle introduction to the MVS model. I’ll show how the basic equations of the model can be obtained by using a traditional approach to MOSFETs. I’ll then indicate how the parameters in this traditional model must be re-interpreted in order to capture...

  13. The MVS Nanotransistor Model: A Case Study in Compact Modeling

    26 Nov 2014 | | Contributor(s):: Shaloo Rakheja

    In this talk, I will present my view on building an industry-standard compact model by using the MVS model as a case study. In the first part of the talk, I discuss mathematical issues, such as the smoothness of functions and their higher-order derivatives in connection with the MVS model....

  14. Basics of Compact Model Development

    02 Aug 2014 | | Contributor(s):: Sivakumar P Mudanai

    This tutorial is aimed at developing an understanding of what a compact model is, the need and role of compact models in the semiconductor industry and the requirements that a compact model must meet for acceptable use in circuit simulations. The tutorial will use simple examples from planar...

  15. The Road Ahead for Carbon Nanotube Transistors

    09 Jul 2013 | | Contributor(s):: Aaron Franklin

    In this talk, recent advancements in the nanotube transistor field will be reviewed, showing why CNTFETs are worth considering now more than ever. Then, the material- and device-related challenges to realizing a nanotube-driven digital technology will be covered.

  16. The History of Semiconductor Heterostructures Research: From Early Double Heterostructure Concept to Modern Quantum Dot Structures

    11 Jul 2011 | | Contributor(s):: Zhores I. Alferov

    It would be very difficult today to imagine solid-state physics without semiconductor heterostructures. Semiconductor heterostructures and especially double heterostructures, including quantum wells, quantum wires and quantum dots, currently comprise the object of investigation of two thirds of...

  17. The Elusive Spin Transistor

    11 Apr 2011 | | Contributor(s):: Supriyo Datta

    This presentation is a short introductory tutorial on spin-transistors.

  18. Control of Spin Precession in a Datta-Das Transistor Structure

    11 Apr 2011 | | Contributor(s):: Hyun Cheol Koo

    Transistors Switch onto Spin Using the spin of an electron in addition to, or instead of, the charge properties is believed to have many benefits in terms of speed, power-cost, and integration density over conventional electronic circuits. At the heart of the field of spintronics has been a...

  19. FETToy

    14 Feb 2006 | | Contributor(s):: Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom

    Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

  20. WALLA Lecture: Electronics, Microelectronics and Nanoelectronics

    04 May 2010 | | Contributor(s):: Mark Lundstrom

    The 21st century is the age of nanoelectronics and will be transformed by increasingly powerful electronic products. At the same time, new applications that apply nanoelectronics to challenges in health, the environment, and energy will be increasingly important. This talk is an introduction to...