Tags: NEEDS node

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  1. III-V Tunnel FET Model

    20 Apr 2015 | Compact Models | Contributor(s):

    By Huichu Liu1, Vinay Saripalli1, Vijaykrishnan Narayanan1, Suman Datta1

    Penn State University

    The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.

    https://nanohub.org/publications/12/?v=2

  2. mCell Model

    19 Jan 2015 | Compact Models | Contributor(s):

    By David M. Bromberg1, Daniel H. Morris1

    Carnegie Mellon University

    This model is a hybrid physics/empirical compact model that describes digital switching behavior of an mCell logic devices, where a write current moves a domain wall to switch the resistance of a...

    https://nanohub.org/publications/13/?v=2

  3. R3

    21 Nov 2014 | Compact Models | Contributor(s):

    By Colin McAndrew

    Freescale Semiconductor, Inc.

    Compact model for polysilicon (poly) resistors, 3-terminal JFETs, and diffused resistors.

    https://nanohub.org/publications/26/?v=1

  4. FET pH Sensor Model

    03 Nov 2014 | Compact Models | Contributor(s):

    By Piyush Dak1, Muhammad A. Alam1

    Purdue University

    The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH.

    https://nanohub.org/publications/11/?v=1

  5. Spin Switch Model

    23 Oct 2014 | Compact Models | Contributor(s):

    By Samiran Ganguly1, Kerem Yunus Camsari1, Supriyo Datta1

    Purdue University

    We present a circuit/compact model for the Spin Switch created using a Verilog-A based library of "spintronic lego blocks" building upon previous works on spin transport.

    https://nanohub.org/publications/21/?v=1

  6. Stanford University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model

    23 Oct 2014 | Compact Models | Contributor(s):

    By Zizhen Jiang1, H.-S. Philip Wong1

    Stanford University

    The Stanford University RRAM Model is a SPICE-compatible compact model which describes switching performance for bipolar metal oxide RRAM.

    https://nanohub.org/publications/19/?v=1

  7. Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model

    23 Oct 2014 | Compact Models | Contributor(s):

    By Xuanyao Fong1, Sri Harsha Choday1, Panagopoulos Georgios1, Charles Augustine1, Kaushik Roy1

    Purdue University

    This is the Verilog-A model of the magnetic tunnel junction developed by the Nanoelectronics Research Laboratory at Purdue University.

    https://nanohub.org/publications/16/?v=1

  8. TAG Solar Cell Model (p-i-n thin film)

    23 Oct 2014 | Compact Models | Contributor(s):

    By Sourabh Dongaonkar1, Xingshu Sun1, Mark Lundstrom1, Muhammad A. Alam1

    Purdue University

    The TAG solar cell model is a physics-based compact model for p-i-n thin film solar cells that can be used for panel level simulations.

    https://nanohub.org/publications/20/?v=1

  9. Released Resonant Body Transistor (RBT) Model

    22 Oct 2014 | Compact Models | Contributor(s):

    By Bichoy W. Bahr1, Dana Weinstein1, Luca Daniel1

    Massachusetts Institute of Technology (MIT)

    An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. The model is aimed to present a deep...

    https://nanohub.org/publications/17/?v=1

  10. MIT Virtual Source GaNFET-RF ( MVSG-RF) Model

    22 Oct 2014 | Compact Models | Contributor(s):

    By Ujwal Radhakrishna1, Dimitri Antoniadis1

    Massachusetts Institute of Technology (MIT)

    The MVS-G-RF GaN HEMT model is a self-consistent transport/capacitance model for scaled GaN HEMT devices used in RF applications.

    https://nanohub.org/publications/14/?v=1

  11. Ambipolar Virtual Source Compact Model for Graphene FETs

    22 Oct 2014 | Compact Models | Contributor(s):

    By Shaloo Rakheja1, Dimitri Antoniadis1

    Massachusetts Institute of Technology (MIT)

    This is a compact physics-based ambipolar-virtual-source (AVS) model that describes carrier transport in both unipolar and ambipolar regimes in quasi-ballistic graphene field-effect transistors...

    https://nanohub.org/publications/10/?v=1

  12. TAG Solar Cell Model (p-i-n thin film) 1.0.0

    02 Apr 2014 | | Contributor(s):: Sourabh Dongaonkar, Xingshu Sun, Mark Lundstrom, Muhammad A. Alam

    A new Version of this resource has been released. Please see TAG Solar Cell Model (p-i-n thin film) 1.0.1. The TAG solar cell model is a physics-based compact model for p-i-n thin film solar cells that can be used for panel level simulations.

  13. NEEDS Compact Model Development Process - v0.1

    17 Feb 2014 | | Contributor(s):: Michael McLennan

    The Nano-Engineered Electronic Device Simulation (NEEDS) effort is focused on creating compact models for nanoelectronics. The process involves a new Berkeley Model Development Environment (MDE) tool (https://nanohub.org/tools/mde) and other infrastructure on nanoHUB.org. This seminar describes...

  14. RF Solid-State Vibrating Transistors

    15 Feb 2014 | | Contributor(s):: Dana Weinstein

    In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of IBM’s SOI CMOS process, without any post-processing or packaging will be described. ...

  15. Tunnel FETs - Device Physics and Realizations

    10 Jul 2013 | | Contributor(s):: Joachim Knoch

    Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.

  16. The Road Ahead for Carbon Nanotube Transistors

    09 Jul 2013 | | Contributor(s):: Aaron Franklin

    In this talk, recent advancements in the nanotube transistor field will be reviewed, showing why CNTFETs are worth considering now more than ever. Then, the material- and device-related challenges to realizing a nanotube-driven digital technology will be covered.

  17. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    28 Jun 2013 | | Contributor(s):: Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V...

  18. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    28 Jun 2013 | | Contributor(s):: Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are investigating alternative structures and materials, among which III-V compound semiconductor-based...

  19. Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

    28 Jun 2013 | | Contributor(s):: Siyu Koswatta

    Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of present-day electronics. Semiconducting CNTs have large carrier...

  20. Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices

    28 Jun 2013 | | Contributor(s):: raseong kim

    For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device...