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The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.
Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.
Atomistic Modeling of Nano Devices: From Qubits to Transistors
13 Apr 2016 | Online Presentations | Contributor(s): Rajib Rahman
In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spin-orbit-valley coupling in spin qubits to non-equilibrium charge transport in...
MATLAB codes from the "Lessons from Nanoelectronics"
10 Dec 2015 | Downloads | Contributor(s): Supriyo Datta
The .zip archive contains all the codes from the book.
You can download and unzip the file to access the codes organized in folders (titled by the Lecture number).
You can run this on MATLAB or...
3D Topological Insulator Nanowire NEGF Simulation on GPU
28 May 2015 | Downloads | Contributor(s): Gaurav Gupta
This code developed in C and CUDA simulates the carrier transport in three-dimensional (3D) topological insulator (TI) nanowire, with Bi2Se3 as exemplar material, with or...
Modular Approach to Spintronics
28 Apr 2015 | Papers | Contributor(s): Kerem Yunus Camsari
There has been enormous progress in the last two decades, effectively combining spintronics and magnetics into a powerful force that is shaping the field of memory devices. New materials and...
Magnetic Tunnel Junction Lab
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23 Sep 2013 | Tools | Contributor(s): Samiran Ganguly, Deepanjan Datta, Chen Shang, Sankarsh Ramadas, Sayeef Salahuddin, Supriyo Datta
Calculate Resistance, Tunneling Magneto Resistance, Spin Torques, and Switching characteristics of a Magnetic Tunnel Junction
Efficiency Enhancement for Nanoelectronic Transport Simulations
02 Feb 2014 | Papers | Contributor(s): Jun Huang
PhD thesis of Jun Huang
Continual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically...
MATLAB codes from "Nanoscale device modeling: the Green's function method"
10 Oct 2013 | Downloads | Contributor(s): Supriyo Datta
The MATLAB programs used to generate the figures in the article that appeared in Superlattices and Microstructures, vol.28, p.253 (2000).
Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices
28 Jun 2013 | Papers | Contributor(s): raseong kim
For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving...
Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic
28 Jun 2013 | Papers | Contributor(s): Himadri Pal
III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can...
Quantum and Atomistic Effects in Nanoelectronic Transport Devices
28 Jun 2013 | Papers | Contributor(s): Neophytos Neophytou
As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for...
Exploring New Channel Materials for Nanoscale CMOS
28 Jun 2013 | Papers | Contributor(s): Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...
Carbon Nanotube Electronics: Modeling, Physics, and Applications
28 Jun 2013 | Papers | Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport...
Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors
28 Jun 2013 | Papers | Contributor(s): Jung-Hoon Rhew
The formidable progress in microelectronics in the last decade has pushed the
channel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes...
Dissipative Quantum Transport in Semiconductor Nanostructures
28 Dec 2011 | Papers | Contributor(s): Peter Greck
In this work, we investigate dissipative quantum transport properties of an open system. After presenting the background of ballistic quantum transport calculations, a simple scattering mechanism,...
Green's Functions Method Explained
10 Aug 2011 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This is a tutorial on non-equilibrium Green's functions.
Tutorial 4: Far-From-Equilibrium Quantum Transport
29 Mar 2011 | Courses | Contributor(s): Gerhard Klimeck
These lectures focus on the application of the theories using the nanoelectronic modeling tools NEMO 1- D, NEMO 3-D, and OMEN to realistically extended devices. Topics to be covered are realistic...
Tutorial 4a: High Bias Quantum Transport in Resonant Tunneling Diodes
29 Mar 2011 | Online Presentations | Contributor(s): Gerhard Klimeck
Resonant Tunneling Diodes - NEMO1D: Motivation / History / Key Insights
Open 1D Systems: Transmission through Double Barrier Structures - Resonant Tunneling
Introduction to RTDs:...
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14 Feb 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
OMEN Nanowire: solve the challenge
05 Feb 2011 | Teaching Materials | Contributor(s): SungGeun Kim
This document includes a challenging problems for OMEN Nanowire users. It challenges users to establish a nanowire transistor structure such that it satisfy the ITRS 2010 requirements.
Electron Density in a Nanowire
30 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, Saumitra Raj Mehrotra
Electron Density in a circular Silicon nanowire transistor.