Tags: NEGF

Description

The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.

Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.

All Categories (141-160 of 192)

  1. CQT: Concepts of Quantum Transport

    30 Nov 2006 | | Contributor(s):: Supriyo Datta

    Note: For an expanded version of these lectures see Datta's 2008 NCN@Purdue Summer School presentations onNanoelectronics and the Meaning of Resistance.How does the resistance of a conductor change as we shrink its length all the way down to a few atoms? This is a question that has intrigued...

  2. MOSCNT: code for carbon nanotube transistor simulation

    14 Nov 2006 | | Contributor(s):: Siyu Koswatta, Jing Guo, Dmitri Nikonov

    Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted...

  3. recursive algorithm for NEGF in Matlab

    13 Nov 2006 | | Contributor(s):: Dmitri Nikonov, Siyu Koswatta

    This zip-archive contains two Matlab functions for the recursive solution of the partial matrix inversion and partial 3-matrix multiplication used in the non-equilibrium Green’s function (NEGF) method.recuresealg3d.m- works for 3-diagonal matricesrecuresealgblock3d.m- works for 3-block-diagonal...

  4. Multidimensional nanoscale device modeling: the finite element method applied to the non-equilibrium Green's function formalism

    31 Oct 2006 | | Contributor(s):: POLIZZI ERIC, Supriyo Datta

    This work deals with the modeling and the numerical simulation of quantum transport in multidimensional open nanoscale devices. The electron transport in the device is described using the Non-Equilibrium Green's Functions (NEGF) formalism and the variational form of the problem is solved using...

  5. Non Equilibrium Green's Functions for Dummies: Introduction to the One Particle NEGF equations

    30 Oct 2006 | | Contributor(s):: Magnus Paulsson

    Non equilibrium Green's function methods are regularly used to calculate current and charge densities in nanoscale (both molecular and semiconductor) conductors under bias. This method is mainly used for ballistic conduction but may be extended to include inelastic scattering. In this tutorial...

  6. Modeling Quantum Transport in Nanoscale Transistors

    30 Oct 2006 | | Contributor(s):: ramesh venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan- tum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new...

  7. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    30 Oct 2006 | | Contributor(s):: Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-κ gate...

  8. A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation

    30 Oct 2006 | | Contributor(s):: , POLIZZI ERIC, Mark Lundstrom

    The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a three-dimensional quantum mechanical simulation...

  9. Electrical Resistance: an Atomistic View

    26 Oct 2006 | | Contributor(s):: Supriyo Datta

    This tutorial article presents a “bottom-up” view of electrical resistance starting from something really small, like a molecule, and then discussing the issues that arise as we move to bigger conductors. Remark ably enough, no serious quantum mechanics is needed to understand electrical...

  10. Nanoscale MOSFETs: Physics, Simulation and Design

    26 Oct 2006 | | Contributor(s)::

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2) development of a new TCAD (technology computer...

  11. Modeling of Nanoscale Devices

    19 Oct 2006 | | Contributor(s):: M. P. Anantram, Mark Lundstrom, Dmitri Nikonov

    We aim to provide engineers with an introductionto the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale electronic devices with quantum mechanicaland atomistic effects. We first review the basis for the...

  12. A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors

    19 Oct 2006 | | Contributor(s):: Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom

    In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the effect of...

  13. Introduction to the Keldysh Nonequilibrium Green Function Technique

    06 Oct 2006 | | Contributor(s)::

    Keldysh nonequilibrium Green function technique is used very widely to describe transport phenomena in mesoscopic systems.The technique is somewhat subtle, and a rigorous treatment would require much more than we have at our disposal, see, for example, the text-bookk by Haug and Jauho [1].The...

  14. nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs

    06 Oct 2006 | | Contributor(s):: Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom

    A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of so-called Büttiker probes. The double gate device geometry permits an efficient mode space approach that...

  15. Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches

    28 Sep 2006 | | Contributor(s):: Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic

    In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim- ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon- on-insulator transistors in the ballistic limit. The proposed simulation scheme, which solves the...

  16. Device Physics and Simulation of Silicon Nanowire Transistors

    28 Sep 2006 | | Contributor(s)::

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

  17. Nanoscale Device Modeling: From MOSFETs to Molecules

    20 Sep 2006 | | Contributor(s)::

    This thesis presents a rigorous yet practical approach to model quantum transport in nanoscale electronic devices.As convetional metal oxide semiconductor devices shrink below the one hundred nanometer regime, quantum mechanical effects are beginning to play an increasingly important role in...

  18. Towards Multi-Scale Modeling of Carbon Nanotube Transistors

    20 Sep 2006 | | Contributor(s):: Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram

    Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon nanotube...

  19. Quantum Transport for Nanostructures

    17 Sep 2006 | | Contributor(s):: Mathieu Luisier

    Nonequilibrium Green's function techniques, initiated by Schwinger and Kadanoff and Baym allow ones to study the time evolution of a many-particle quantum sys- tem. Knowing the 1-particle Green's functions of a given system, one may evaluate 1-particle quantities like carrier density or current....

  20. Understanding Phonon Dynamics via 1D Atomic Chains

    04 Apr 2006 | | Contributor(s):: Timothy S Fisher

    Phonons are the principal carriers of thermal energy in semiconductors and insulators, and they serve a vital role in dissipating heat produced by scattered electrons in semiconductor devices. Despite the importance of phonons, rigorous understanding and inclusion of phonon dynamics in...