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The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.
Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.
A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
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19 Oct 2006 | Papers | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study
the effect of channel access geometries on device performance. This simulation scheme solves the...
Introduction to the Keldysh Nonequilibrium Green Function Technique
06 Oct 2006 | Papers | Contributor(s): A. P. Jauho
Keldysh nonequilibrium Green function technique is used very widely to describe transport phenomena in mesoscopic systems.
The technique is somewhat subtle, and a rigorous treatment would require...
nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs
06 Oct 2006 | Papers | Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
A program to numerically simulate quantum transport in double gate MOSFETs is
described. The program uses a Green’s function approach and a simple treatment of
scattering based on the idea...
Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches
28 Sep 2006 | Papers | Contributor(s): Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic
In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim-
ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon-...
Device Physics and Simulation of Silicon Nanowire Transistors
28 Sep 2006 | Papers | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor
(MOSFET) approaches its scaling limits, many novel device structures are being
extensively explored. Among them,...
Nanoscale Device Modeling: From MOSFETs to Molecules
20 Sep 2006 | Papers | Contributor(s): Prashant Subhash Damle
This thesis presents a rigorous yet practical approach to model quantum transport in nanoscale electronic devices.
As convetional metal oxide semiconductor devices shrink below the one hundred...
Towards Multi-Scale Modeling of Carbon Nanotube Transistors
20 Sep 2006 | Papers | Contributor(s): Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram
Multiscale simulation approaches are needed in order to address scientific and technological
questions in the rapidly developing field of carbon nanotube electronics. In this paper, we...
Quantum Transport for Nanostructures
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17 Sep 2006 | Papers | Contributor(s): Mathieu Luisier
Nonequilibrium Green's function techniques, initiated by Schwinger and Kadanoff
and Baym allow ones to study the time evolution of a many-particle quantum sys-
tem. Knowing the 1-particle...
Understanding Phonon Dynamics via 1D Atomic Chains
04 Apr 2006 | Online Presentations | Contributor(s): Timothy S Fisher
Phonons are the principal carriers of thermal energy in semiconductors and insulators, and they serve a vital role in dissipating heat produced by scattered electrons in semiconductor devices....
Quantum Transport: Atom to Transistor (Spring 2004)
23 May 2006 | Courses | Contributor(s): Supriyo Datta
A newer version of this course is now available
and we would greatly appreciate your feedback regarding the new format and contents.
Exploring Electron Transfer with Density Functional Theory
11 Jun 2006 | Online Presentations | Contributor(s): Troy Van Voorhis
This talk will highlight several illustrative applications of constrained density functional
theory (DFT) to electron transfer dynamics in electronic materials. The kinetics of these
NanoMOS 3.0: First-Time User Guide
06 Jun 2006 | Online Presentations | Contributor(s): Kurtis Cantley, Mark Lundstrom
This tutorial is an introduction to the nanoMOS simulation tool for new users. Descriptions of input and output parameters are included, along with new features associated with the Rappture...
Logic Devices and Circuits on Carbon Nanotubes
05 Apr 2006 | Online Presentations | Contributor(s): Joerg Appenzeller
Over the last years carbon nanotubes (CNs) have attracted an increasing interest as building blocks for nano-electronics applications. Due to their unique properties enabling e.g. ballistic...
Exploring New Channel Materials for Nanoscale CMOS
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21 May 2006 | Papers | Contributor(s): Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...
20 May 2006 | Papers | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the...
4.0 out of 5 stars
19 May 2006 | Tools | Contributor(s): Hong-Hyun Park, Lang Zeng, Matthew Buresh, Siqi Wang, Gerhard Klimeck, Saumitra Raj Mehrotra, Clemens Heitzinger, Benjamin P Haley
Simulate 3D nanowire transport in the effective mass approximation with phonon scattering and 3D Poisson self-consistent solution
Nanoscale Transistors: Advanced VLSI Devices (Introductory Lecture)
20 Apr 2006 | Online Presentations | Contributor(s): Mark Lundstrom
Welcome to the ECE 612 Introductory/Overview lecture. This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into...
Molecular Transport Structures: Elastic Scattering, Vibronic Effects and Beyond
13 Feb 2006 | Online Presentations | Contributor(s): Mark A. Ratner, Abraham Nitzan, Misha Galperin
Current experimental efforts are clarifying quite beautifully the nature of charge transport in so-called molecular junctions, in which a single molecule provides the channel for current flow...
A Top-Down Introduction to the NEGF Approach
14 Jun 2004 | Online Presentations | Contributor(s): Mark Lundstrom
Resonant Tunneling Diodes: an Exercise
06 Jan 2006 | Teaching Materials | Contributor(s): H.-S. Philip Wong
This homework assignment was created by H.-S. Philip Wong for EE 218 "Introduction to Nanoelectronics and Nanotechnology" (Stanford University). It includes a couple of simple "warm up" exercises...