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The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.
Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.
Exploring New Channel Materials for Nanoscale CMOS
28 Jun 2013 | Papers | Contributor(s): Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...
Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors
28 Jun 2013 | Papers | Contributor(s): Jung-Hoon Rhew
The formidable progress in microelectronics in the last decade has pushed the
channel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes...
farha diba sumana
What can be done with help on NEGF formalism as final year BSc project?
Closed | Responses: 0
I have been studying the nanoelectronics lectures by Dr. Supriyo Datta & also followed his NanohubU...
Dissipative Quantum Transport in Semiconductor Nanostructures
28 Dec 2011 | Papers | Contributor(s): Peter Greck
In this work, we investigate dissipative quantum transport properties of an open system. After presenting the background of ballistic quantum transport calculations, a simple scattering mechanism,...
Green's Functions Method Explained
10 Aug 2011 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This is a tutorial on non-equilibrium Green's functions.
How to consider electron-photon interaction w/o using self-energy?
In negf, interactions are considered as self-energies. For electron-photon interaction, a perturbation Hamiltonian is derived and then self-energy is found using coupled-field theory. Now,...
Tutorial 4: Far-From-Equilibrium Quantum Transport
29 Mar 2011 | Courses | Contributor(s): Gerhard Klimeck
These lectures focus on the application of the theories using the nanoelectronic modeling tools NEMO 1- D, NEMO 3-D, and OMEN to realistically extended devices. Topics to be covered are realistic...
Tutorial 4a: High Bias Quantum Transport in Resonant Tunneling Diodes
29 Mar 2011 | Online Presentations | Contributor(s): Gerhard Klimeck
Resonant Tunneling Diodes - NEMO1D: Motivation / History / Key Insights
Open 1D Systems: Transmission through Double Barrier Structures - Resonant Tunneling
Introduction to RTDs:...
5.0 out of 5 stars
23 Feb 2011 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
OMEN Nanowire: solve the challenge
05 Feb 2011 | Teaching Materials | Contributor(s): SungGeun Kim
This document includes a challenging problems for OMEN Nanowire users. It challenges users to establish a nanowire transistor structure such that it satisfy the ITRS 2010 requirements.
Electron Density in a Nanowire
30 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, Saumitra Raj Mehrotra
Electron Density in a circular Silicon nanowire transistor.
OMEN Nanowire Homework Problems
24 Jan 2011 | Teaching Materials | Contributor(s): SungGeun Kim
OMEN Nanowire homework problems: anyone who has gone through the first-time user guide of OMEN Nanowire and done the examples in the guide should be able to run simulations in these homework...