
ECE 606 Lecture 26: The Future of Computational Electronics
20 Dec 2012   Contributor(s):: Gerhard Klimeck
Future Transistors and Single Atom Transistors; New Modeling Tools (NEMO); nanoHUB: Cloud Computing  Software as a Service

Nanoelectronic Modeling Lecture 02: (NEMO) Motivation and Background
25 Jan 2010   Contributor(s):: Gerhard Klimeck, Dragica Vasileska
Fundamental device modeling on the nanometer scale must include effect of open systems, high bias, and an atomistic basis. The nonequilibrium Green Function Formalism (NEGF) can include all these components in a fundamentally sound approach and has been the basis for a few novel device...

Nanoelectronic Modeling Lecture 22: NEMO1D  Motivation, History and Key Insights
07 Feb 2010   Contributor(s):: Gerhard Klimeck
The primary objective of the NEMO1D tool was the quantitative modeling of high performance Resonant Tunneling Diodes (RTDs). The software tool was intended for Engineers (concepts, fast turnaround, interactive) and Scientists (detailed device anaysis). Therefore various degrees of...

Nanoelectronic Modeling Lecture 23: NEMO1D  Importance of New Boundary Conditions
09 Mar 2010   Contributor(s):: Gerhard Klimeck
One of the key insights gained during the NEMO1D project was the development of new boundary conditions that enabled the modeling of realistically extended Resonant Tunneling Diodes (RTDs). The new boundary conditions are based on the partitioning of the device into emitter and collector...

Nanoelectronic Modeling Lecture 24: NEMO1D  Incoherent Scattering
09 Mar 2010   Contributor(s):: Gerhard Klimeck
Incoherent processes due to phonons, interface roughness and disorder had been suspected to be the primary source of the valley current of resonant tunneling diodes (RTDs) at the beginning of the NEMO1D project in 1994. The modeling tool NEMO was created at Texas Instruments to fundamentally...

Nanoelectronic Modeling Lecture 25a: NEMO1D  Full Bandstructure Effects
07 Jul 2010   Contributor(s):: Gerhard Klimeck
(quantitative RTD modeling at room temperature)

Nanoelectronic Modeling Lecture 25b: NEMO1D  Hole Bandstructure in Quantum Wells and Hole Transport in RTDs
09 Mar 2010   Contributor(s):: Gerhard Klimeck
Heterostructures such as resonant tunneling diodes, quantum well photodetectors and lasers, and cascade lasers break the symmetry of the crystalline lattice. Such break in lattice symmetry causes a strong interaction of heavy, light and splitoff hole bands. The bandstructure of holes and the...

Nanoelectronic Modeling Lecture 26: NEMO1D 
09 Mar 2010   Contributor(s):: Gerhard Klimeck
NEMO1D demonstrated the first industrial strength implementation of NEGF into a simulator that quantitatively simulated resonant tunneling diodes. The development of efficient algorithms that simulate scattering from polar optical phonons, acoustic phonons, alloy disorder, and interface...

Nanoelectronic Modeling Lecture 27: NEMO1D 
09 Mar 2010   Contributor(s):: Gerhard Klimeck
This presentation provides a very high level software overview of NEMO1D. The items discussed are:User requirementsGraphical user interfaceSoftware structureProgram developer requirementsDynamic I/O design for batch and GUIResonance finding algorithmInhomogeneous energy meshingInformation flow,...

Nanoelectronic Modeling Lecture 28: Introduction to Quantum Dots and Modeling Needs/Requirements
20 Jul 2010   Contributor(s):: Gerhard Klimeck
This presentation provides a very high level software overview of NEMO1D.Learning Objectives:This lecture provides a very high level overview of quantum dots. The main issues and questions that are addressed are:Length scale of quantum dotsDefinition of a quantum dotQuantum dot examples and...

Nanoelectronic Modeling Lecture 29: Introduction to the NEMO3D Tool
04 Aug 2010   Contributor(s):: Gerhard Klimeck
This presentation provides a very high level software overview of NEMO3D. The items discussed are:Modeling Agenda and MotivationTightBinding Motivation and basic formula expressionsTight binding representation of strainSoftware structureNEMO3D algorithm flow NEMO3D parallelization scheme –...

Nanoelectronic Modeling Lecture 31a: LongRange Strain in InGaAs Quantum Dots
04 Aug 2010   Contributor(s):: Gerhard Klimeck
This presentation demonstrates the importance of longrange strain in quantum dotsNumerical analysis of the importance of the buffer around the central quantum dot  local band edges – vertical and horizontal extension of the bufferControlled overgrowth can tune the electron energies in the...

Nanoelectronic Modeling Lecture 32: Strain Layer Design through Quantum Dot TCAD
04 Aug 2010   Contributor(s):: Gerhard Klimeck, Muhammad Usman
This presentation demonstrates the utilization of NEMO3D to understand complex experimental data of embedded InAs quantum dots that are selectively overgrown with a strain reducing InGaAs layer. Different alloy concentrations of the strain layer tune the optical emission and absorption...

Nanoelectronic Modeling Lecture 34: Alloy Disorder in Quantum Dots
05 Aug 2010   Contributor(s):: Gerhard Klimeck, Timothy Boykin, Chris Bowen
This presentation discusses the consequences of Alloy Disorder in strained InGaAs Quantum Dots Reminder of the origin of bandstructure and bandstructure engineeringWhat happens when there is disorder?Concept of disorder in the local bandstructureConfiguration noise, concentration noise,...

Nanoelectronic Modeling Lecture 35: Alloy Disorder in Nanowires
05 Aug 2010   Contributor(s):: Gerhard Klimeck, Timothy Boykin, Neerav Kharche, Mathieu Luisier, Neophytos Neophytou
This presentation discusses the consequences of Alloy Disorder in unstrained strained AlGaAs nanowiresRelationship between dispersion relationship and transmission in perfectly ordered wiresBand folding in Si nanowiresTranmisison in disordered wires – relationship to an approximate...

Nanoelectronic Modeling Lecture 39: OMEN: BandtoBandTunneling Transistors
05 Aug 2010   Contributor(s):: Gerhard Klimeck, Mathieu Luisier
This presentation discusses the motivation for bandtoband tunneling transistors to lower the power requirements of the next generation transistors. The capabilities of OMEN to model such complex devices on an atomistic representation is demonstrated.Learning Objectives:BandToBand Tunneling...

Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness
05 Aug 2010   Contributor(s):: Gerhard Klimeck, Mathieu Luisier
This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..Learning Objectives:GNR TFET Simulation pz TightBinding Orbital Model 3D SchrödingerPoisson Solver Device Simulation Structure Optimization (Doping, Lg, VDD) LER => Localized Band Gap States LER =>...

Nanoelectronic Modeling: Multimillion Atom Simulations, Transport, and HPC Scaling to 23,000 Processors
07 Mar 2008   Contributor(s):: Gerhard Klimeck
Future field effect transistors will be on the same length scales as “esoteric” devices such as quantum dots, nanowires, ultrascaled quantum wells, and resonant tunneling diodes. In those structures the behavior of carriers and their interaction with their environment need to be fundamentally...

Tutorial 4a: High Bias Quantum Transport in Resonant Tunneling Diodes
29 Mar 2011   Contributor(s):: Gerhard Klimeck
Outline:Resonant Tunneling Diodes  NEMO1D: Motivation / History / Key InsightsOpen 1D Systems: Transmission through Double Barrier Structures  Resonant TunnelingIntroduction to RTDs: Linear Potential DropIntroduction to RTDs: Realistic Doping ProfilesIntroduction to RTDs: Relaxation Scattering...

Tutorial 4b: Introduction to the NEMO3D Tool  Electronic Structure and Transport in 3D
29 Mar 2011   Contributor(s):: Gerhard Klimeck
Electronic Structure and Transport in 3D  Quantum Dots, Nanowires and UltraThin Body Transistors