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When we deposte the gold nanoparticle on active material in transistors, the gap between two nanoparticle is 0.5 nm, what type of tunneling barrier will be forming?
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I have made a Pentacene memory transistor, here I have deposited the gold nano particles on active material with different nanometer spacing between gold nano particles and pentacene,finally...
Bulk Heterojunction Device Model Simulator Package
20 May 2013 | Downloads | Contributor(s): Adrien Pierre, Shaofeng Lu, Ian Howard, Antonio Facchetti, Ana Claudia Arias
This is a simulation package for bulk heterojunction organic photovoltaics from J. Appl. Phys. 113, 154506 (2013). The carrier concentration boundary conditions, mobility, exciton quenching...
Caterin Salas Redondo
Freddy Geovanny Del Pozo