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When we deposte the gold nanoparticle on active material in transistors, the gap between two nanoparticle is 0.5 nm, what type of tunneling barrier will be forming?
Closed | Responses: 0
I have made a Pentacene memory transistor, here I have deposited the gold nano particles on active material with different nanometer spacing between gold nano particles and pentacene,finally...
Bulk Heterojunction Device Model Simulator Package
20 May 2013 | Downloads | Contributor(s): Adrien Pierre, Shaofeng Lu, Ian Howard, Antonio Facchetti, Ana Claudia Arias
This is a simulation package for bulk heterojunction organic photovoltaics from J. Appl. Phys. 113, 154506 (2013). The carrier concentration boundary conditions, mobility, exciton quenching...
Caterin Salas Redondo
Circuits on Cellulose: From Transistors to LEDs, from Displays to Microfluidics on Paper
14 Feb 2017 | Online Presentations | Contributor(s): Andrew Steckl
In this lecture I will review the use of cellulose-based paper as a material in a variety of electronic (and related) applications, including transistors, light emitting diodes, displays,...
Freddy Geovanny Del Pozo