Tags: quantum dots

Description

Quantum dots have a small, countable number of electrons confined in a small space. Their electrons are confined by having a tiny bit of conducting material surrounded on all sides by an insulating material. If the insulator is strong enough, and the conducting volume is small enough, then the confinement will force the electrons to have discrete (quantized) energy levels. These energy levels can influence the device behavior at a macroscopic scale, showing up, for example, as peaks in the conductance. Because of the quantized energy levels, quantum dots have been called "artificial atoms." Neighboring, weakly-coupled quantum dots have been called "artificial molecules."

Learn more about quantum dots from the many resources on this site, listed below. More information on Quantum dots can be found here.

Resources (21-40 of 114)

  1. Quantum Dots

    07 May 2015 | | Contributor(s):: Sebastien Maeder, NACK Network

    OutlineIntroductionQuantum ConfinementQD SynthesisColloidal MethodsEpitaxial GrowthApplicationsBiologicalLight EmittersAdditionalApplications

  2. Structure and Morphology of Silicon-Germanium Thin Films

    07 Feb 2015 | | Contributor(s):: Brian Demczyk

    This presentation describes the growth of (Si,Ge & SiGe) thin films on Si and Ge (001) and (111) substrates by ultrahigh vacuum chemical vapor deposition (UHVCVD). Thin films were characterized structurally by conventional and high-resolution transmission electron microscopy (TEM) and...

  3. Structure and Morphology of Silicon Germanium Thin Films

    30 Dec 2013 | | Contributor(s):: Brian Demczyk

    Single layer silicon and germanium films as well as nominally 50-50 silicon-germanium alloys were deposited on single crystal silicon and germanium (001) and (111) substrates by ultrahigh vacuum chemical vapor deposition. These films spanned the range of + 4 % film-substrate lattice mismatch. A...

  4. Why quantum dot simulation domain must contain multi-million atoms?

    11 Jan 2013 | | Contributor(s):: Muhammad Usman

    The InGaAs quantum dots obtained from the self-assembly growth process are heavily strained. The long-range strain and piezoelectric fields significantly modifies the electronic structure of the quantum dots. This imposes a critical constraint on the minimum size of the simulation domain to study...

  5. Excited State Spectroscopy of a Quantum Dot Molecule

    11 Jan 2013 | | Contributor(s):: Muhammad Usman

    Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed excitonic spectrum by Krenner et al (Phys. Rev. Lett. 94 057402, 2005) is quantitatively reproduced,...

  6. Quantum Dot Quantum Computation Simulator

    04 Aug 2012 | | Contributor(s):: Brian Sutton

    Performs simulations of quantum dot quantum computation using a model Hamiltonian with an on-site magnetic field and modulated inter-dot exchange interaction.

  7. NEMO5 Tutorial 5C: Quantum Dots with Strain and Electronic Wave Functions

    18 Jul 2012 | | Contributor(s):: Yuling Hsueh

  8. NEMO5 Tutorial 5A: Devi ce Simulation - Quantum Dots

    17 Jul 2012 | | Contributor(s):: Jean Michel D Sellier

    This presentation introduces the capabilities of NEMO5 to simulate quantum dots.

  9. NEMO5 Overview Presentation

    17 Jul 2012 | | Contributor(s):: Tillmann Christoph Kubis, Michael Povolotskyi, Jean Michel D Sellier, James Fonseca, Gerhard Klimeck

    This presentation gives an overview of the current functionality of NEMO5.

  10. Quantum Dot based Photonic Devices

    19 Mar 2012 | | Contributor(s):: Muhammad Usman

    Deployment of nanometer-sized semiconductor quantum dots (QDs) in the active region ofphotonic devices such as lasers, semiconductor optical amplifiers (SOA's), photo-detectors etc.for the next generation communication systems offers unique characteristics such astemperature-insensitivity, high...

  11. On the Two to Three Dimensional Growth Transition in Strained Silicon Germanium Thin Films

    31 Jan 2012 | | Contributor(s):: Brian Demczyk

    Utilizing a model adapted from classical nucleation theory [8], we calculate a "critical thickness" for island formation, taking into account the surfaceenergies of the deposit and the substrate and the elastic modulus of the deposit, to which experimental results for CVD grown silicon germanium...

  12. NEMO3D User Guide for Quantum Dot Simulations

    29 Nov 2011 | | Contributor(s):: M. Usman, Gerhard Klimeck

    NEMO 3D is a large and complex simulator; and understanding of its source code requires considerable knowledge of quantum mechanics, condensed matter theory, and parallel programming.

  13. Polarization Response of Multi-layer InAs Quantum Dot Stacks

    20 Oct 2011 | | Contributor(s):: Muhammad Usman

    Recent experimental measurements, without any theoretical guidance, showed that isotropic polarization response can be achieved by increasing the number of QD layers in a QD stack. In this work, we analyse the polarization response of multi-layer quantum dot stacks containing up to nine quantum...

  14. BME 695L Lecture 5: Nanomaterials for Core Design

    14 Sep 2011 | | Contributor(s):: James Leary

    See references below for related reading.5.1      Introduction5.1.1    core building blocks5.1.2    functional cores5.1.3    functionalizing the core surface5.2      Ferric...

  15. The History of Semiconductor Heterostructures Research: From Early Double Heterostructure Concept to Modern Quantum Dot Structures

    21 Jun 2011 | | Contributor(s):: Zhores I. Alferov

    It would be very difficult today to imagine solid-state physics without semiconductor heterostructures. Semiconductor heterostructures and especially double heterostructures, including quantum wells, quantum wires and quantum dots, currently comprise the object of investigation of two thirds of...

  16. Illinois ECE598XL Semiconductor Nanotechnology - 3 - Quantum Dots: Formation

    15 Jun 2011 | | Contributor(s):: Xiuling Li

  17. Quantitative Modeling and Simulation of Quantum Dots

    16 Jul 2010 | | Contributor(s):: Muhammad Usman

    Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is comparable in size to the electron wavelength. Under such conditions quantum dots can be interpreted...

  18. Illinois Nano EP Seminar Series Spring 2010 - Lecture 8: Quantum Dot and Nanopore Lasers

    29 Jan 2011 | | Contributor(s):: James J. Coleman

    We describe the growth, processing, and characteristics of self‐assembled and patterned quantum dot and nanopore lasers that exhibit interesting effects arising from reduction of the active medium to the quantum regime (

  19. Tutorial 4b: Introduction to the NEMO3D Tool - Electronic Structure and Transport in 3D

    23 Mar 2011 | | Contributor(s):: Gerhard Klimeck

    Electronic Structure and Transport in 3D - Quantum Dots, Nanowires and Ultra-Thin Body Transistors

  20. Quantum Dot Lab: First-Time User Guide

    08 Feb 2011 | | Contributor(s):: SungGeun Kim, Lynn Zentner

    This first-time user guide introduces the quantum dot lab tool. It includes an explanation of the input/output interface and the relationship between inputs and outputs of the quantum dot lab.NCN@Purdue[1] Gerhard Klimeck, Introduction to Quantum Dot Lab: https://www.nanohub.org/resources/4194[2]...