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How to model electrical transport in large conductors?
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For modeling electrical transport in large conductors one has to consider the inter unit coupling energy(t) as the reason behind the level broadening in the unit cells.
How to model metal/source drain MOSFET in nanoscale device simulators?
Open | Responses: 1
Hello; I want to model metal source/drain MOSFET in nanoscale device simulators. How can I define schottky contact at source/drain channel interface?
de Broglie wavelength
Regarding our discussion yesterday, you mentioned that DeBroglie
wavelength in metals is approx. 1A. I...
In the time-dependent NEGF equation, given a sigma_in(t,t’) due to the dot, I am getting
an I-V equation that is making it difficult for me to group terms. For instance, looking at...
>About the multi-electron picture you have been talking,
>I would like to know, if I put two electrons at the
>same time from the source to the channel rather than
Degeneracy factor for holes
You calculate the occupation of donor states in your book by requiring that only (00, 01, 10) states are possible. Therefore, the probability that donor states are unoccupied is: