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Morteza Charmi
https://nanohub.org/members/145222
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MOSCNT: code for carbon nanotube transistor simulation
14 Nov 2006 | | Contributor(s):: Siyu Koswatta, Jing Guo, Dmitri Nikonov
Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted that...
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Muhammad junaid
https://nanohub.org/members/65841
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Multi-gate Nanowire FET
18 May 2007 | | Contributor(s):: Mincheol Shin
3D simulator for silicon nanowire field effect transistors with multiple gates
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Nadim Chowdhury
https://nanohub.org/members/34826
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Najeb Abdul-Jabbar
https://nanohub.org/members/53200
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Nano Carbon: From ballistic transistors to atomic drumheads
14 May 2008 | | Contributor(s):: Paul L. McEuen
Carbon takes many forms, from precious diamonds to lowly graphite. Surprisingly, it is the latter that is the most prized by nano physicists. Graphene, a single layer of graphite, can serve as an impenetrable membrane a single atom thick. Rolled up into a nanometer-diameter cylinder--a carbon...
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Nanoelectronic Devices, With an Introduction to Spintronics
09 Sep 2010 | | Contributor(s):: Supriyo Datta, Mark Lundstrom
Nanoelectronic devices are at the heart of today's powerful computers and are also of great interest for many emerging applications including energy conversion, sensing and alternative computing paradigms. Our objective, however, is not to discuss specific devices or...
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Nanoelectronic Modeling Lecture 25b: NEMO1D - Hole Bandstructure in Quantum Wells and Hole Transport in RTDs
09 Mar 2010 | | Contributor(s):: Gerhard Klimeck
Heterostructures such as resonant tunneling diodes, quantum well photodetectors and lasers, and cascade lasers break the symmetry of the crystalline lattice. Such break in lattice symmetry causes a strong interaction of heavy-, light- and split-off hole bands. The bandstructure of holes and the...
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Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT
05 Aug 2010 | | Contributor(s):: Gerhard Klimeck, Neerav Kharche, Neophytos Neophytou, Mathieu Luisier
This presentation demonstrates the OMEN capabilities to perform a multi-scale simulation of advanced InAs-based high mobility transistors.Learning Objectives:Quantum Transport Simulator Full-Band and Atomistic III-V HEMTs Performance Analysis Good Agreement with Experiment Some Open Issues...
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Nanoelectronic Modeling: From Quantum Mechanics and Atoms to Realistic Devices
25 Jan 2010 | | Contributor(s):: Gerhard Klimeck
The goal of this series of lectures is to explain the critical concepts in the understanding of the state-of-the-art modeling of nanoelectronic devices such as resonant tunneling diodes, quantum wells, quantum dots, nanowires, and ultra-scaled transistors. Three fundamental concepts critical to...
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Nanoelectronic Modeling: Multimillion Atom Simulations, Transport, and HPC Scaling to 23,000 Processors
07 Mar 2008 | | Contributor(s):: Gerhard Klimeck
Future field effect transistors will be on the same length scales as “esoteric” devices such as quantum dots, nanowires, ultra-scaled quantum wells, and resonant tunneling diodes. In those structures the behavior of carriers and their interaction with their environment need to be fundamentally...
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NanoElectronic MOdeling: NEMO
20 Dec 2007 | | Contributor(s):: Gerhard Klimeck
This presentation was one of 13 presentations in the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.Novel nanoelectronic devices such as quantum dots, nanowires, and ultra-scaled...
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Nanoelectronics and the Meaning of Resistance
20 Aug 2008 | | Contributor(s):: Supriyo Datta
The purpose of this series of lectures is to introduce the "bottom-up" approach to nanoelectronics using concrete examples. No prior knowledge of quantum mechanics or statistical mechanics is assumed; however, familiarity with matrix algebra will be helpful for some topics. Day 1: What...
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Nanoelectronics and the meaning of resistance: Course Handout and Exercises
02 Sep 2008 | | Contributor(s):: Supriyo Datta
Handout with reference list, MATLAB scripts and exercise problems.
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nanoHUB-U Fundamentals of Nanoelectronics B: Quantum Transport: Scientific Overview
11 Dec 2015 | | Contributor(s):: Supriyo Datta
This video is the Scientific Overview for the nanoHUB-U course "Fundamentals of Nanoelectronics Part B: Quantum Transport" by Supriyo Datta.
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nanoHUB-U: Fundamentals of Nanoelectronics - Part B: Quantum Transport, 2nd Edition
Courses|'
28 May 2015
Second in a two part series, this nanotechnology course provides an introduction to more advanced topics, including the Non-Equilibrium Green’s Function (NEGF) method widely used to analyze quantum...
https://nanohub.org/courses/FON2
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NanoMOS
19 May 2006 | | Contributor(s):: , Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Yang Liu, Yunfei Gao, Xufeng Wang, Mark Lundstrom
2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs
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NanoMOS 2.5 Source Code Download
22 Feb 2005 | | Contributor(s):: Zhibin Ren, Sebastien Goasguen
NanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of five transport models is available (drift-diffusion, classical ballistic, energy transport, quantum ballistic, and quantum diffusive). The transport models treat quantum effects in the...
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Nanoscale MOSFETS: Physics, Simulation and Design
27 Jun 2013 | | Contributor(s):: Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...