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ECE 695A Lecture 26-1: Statistics of Soft Breakdown via Methods of Markov Chains
28 Mar 2013 | | Contributor(s):: Muhammad Alam
Outline:Spatial vs. Temporal correlationTheory of correlated Dielectric BreakdownExcess leakage as a signature of correlated BDConclusions
ECE 695A Lecture 26-2: Statistics of Soft Breakdown (Breakdown Position correlation)
Outline:Position and time correlation of BD spotHow to determine the position of the BD SpotPosition correlation in BD spotsWhy is localization so weak?Conclusions
ECE 695A Lecture 26R: Review Questions
ECE 695A Lecture 25R: Review Questions
27 Mar 2013 | | Contributor(s):: Muhammad Alam
Review Questions:Explain why percolation resistance is area independent?Why is the physical origin of the distribution of percolation resistance?How would the ratio of hard and soft breakdown change with an auxiliary parallel capacitor in constant voltage stress? Explain. What is the evidence...
ECE 695A Lecture 24: Statistics of Oxide Breakdown - Cell percolation model
21 Mar 2013 | | Contributor(s):: Muhammad Alam
Outline:Observations: Failure times are statistically distributedModels of Failure Distribution: Extrinsic vs. percolationPercolation theory of multiple BreakdownTDDB lifetime projectionConclusions
ECE 695A Lecture 24R: Review Questions
ECE 695A Lecture 25: Theory of Soft and Hard Breakdown
Outline:Oxide breakdowns need not be catastrophicObservations about soft vs. hard breakdownA simple model for soft/hard breakdownInterpretation of experimentsConclusions
ECE 695A Lecture 23R: Review Questions
19 Mar 2013 | | Contributor(s):: Muhammad Alam
ECE 695A Lecture 22R: Review Questions
ECE 695A Lecture 23: Characterization of Defects Responsible for TDDB
ECE 695A Lecture 21R: Review Questions
12 Mar 2013 | | Contributor(s):: Muhammad Alam
Review Questions:What is the name of the failure distribution that we expect for thin oxides?For thin oxides, is PMOS or NMOS more of a concern in modern transistors?What is DBIE? When does it occur? Can the transistor be still functional ?In what ways is TDDB compare with NBTI and HCI...
ECE 695A Lecture 21: Introduction to Dielectric Breakdown
05 Mar 2013 | | Contributor(s):: Muhammad Alam
Outline:Basic features of gate dielectric breakdownPhysical characterization of breakdown spotTime-dependent defect generationConclusions
ECE 695A Lecture 22: Voltage Dependence of Thin Dielectric Breakdown
ECE 695A Lecture 19R: Review Questions
04 Mar 2013 | | Contributor(s):: Muhammad Alam
Review Questions::If a signal disappears from ESR because of negative-U configuration, can it be detected by SDR or EDSR methods?What is the relationship between Gauss and Tesla as units of magnetic field?Was the original SDR method for bulk or interface traps?What is the relationship between...
ECE 695A Lecture 19: Spin-Dependent Recombination and Electrically Detected Magnetic Resonance
01 Mar 2013 | | Contributor(s):: Muhammad Alam
Outline:Importance of measuring interface damageElectronicSpinResonance( Aquickreview)Spin Dependent RecombinationElectrically detected spin-resonance and noise- spectroscopyComparing the approachesConclusions
ECE 695A Lecture 17R: Review Questions
Review Questions:What is wrong with using C-V measurement methods exclusively for NBTI and HCI degradation?Why do people like to use C-V techniques? What method would you use for HCI measurement?HCI does not relax. Why would you still want to use on-the-fly type methods? (Hint: Think about Drain...
ECE 695A Lecture 18R: Review Questions
Review Questions:Between DCIV and CP methods, which one is easier and why?In what ways are CP and DCIV methods better at characterizing traps compared to C-V methods?What are the problems of using CP, DCIV, C-V methods for NBTI measurements?Which method does not suffer from the same problem as...
ECE 695A Lecture 18: DC-IV and Charge Pumping Methods
25 Feb 2013 | | Contributor(s):: Muhammad Alam
Outline:Recall: Properties of Interface DefectsFlux-based method 1: Direct Current-Voltage methodFlux-based method 2: Charge pumping methodConclusions
ECE 695A Lecture 16: Review Questions
22 Feb 2013 | | Contributor(s):: Muhammad Alam
Review QuestionWhat is the difference between hot atom dissociation vs. cold atom dissociation?.Many experiments are reported at 77K and 295K. Why these temperatures?.Why is there such a big difference between VT degradation and NIT degradation?.Impact ionization threshold is significantly...
ECE 695A Lecture 17: Subthreshold and Idlin Methods
21 Feb 2013 | | Contributor(s):: Muhammad Alam