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Lecture 4: Stick Percolation and Nanonet Electronics
26 Oct 2009 | | Contributor(s):: Muhammad A. Alam
Outline:Stick percolation and nanonet transistorsShort channel nanonet transistorsLong channel nanonet transistorsTransistors at high voltagesConclusions
Lecture 1: Percolation and Reliability of Electronic Devices
17 Sep 2009 | | Contributor(s):: Muhammad A. Alam
Lecture 2: Threshold, Islands, and Fractals
Lecture 3: Electrical Conduction in Percolative Systems
The Challenges of Micro-System Product Development
05 Jun 2009 | | Contributor(s):: James J. Allen
This talk will discuss the historical development of micro‐system technology, the products that have been developed and the challenges to development of a reliable product.
ECE 606 Lecture 39: Reliability of MOSFET
out of 5 stars
28 Apr 2009 | | Contributor(s):: Muhammad A. Alam
Experiences with nonintrusive polynomial Chaos and stochastic collocation methods for uncertainty analysis and design
13 Mar 2009 | | Contributor(s):: Michael S. Eldred
Non—intrusive polynomial chaos expansion (PCE) and stochastic collocation (SC) methods are attractive techniques for uncertainty quantification due to their abilities to produce functional representations of stochastic variability and to achieve exponential convergence rates in statistics of...
ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET
14 Nov 2008 | | Contributor(s):: Muhammad A. Alam
Guest lecturer: Muhammad A. Alam.
From density functional theory to defect level in silicon: Does the “band gap problem” matter?
01 Oct 2008 | | Contributor(s):: Peter A. Schultz
Modeling the electrical effects of radiation damage in semiconductor devices requires a detailed description of the properties of point defects generated during and subsequent to irradiation. Such modeling requires physical parameters, such as defect electronic levels, to describe carrier...