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A Physical Model for Non-Ohmic Shunt Conduction and Metastability in Amorphous Silicon Solar Cells
16 Aug 2011 | | Contributor(s):: Sourabh Dongaonkar, Souvik Mahapatra, Karthik Yogendra, Muhammad Alam
In this talk we develop a coherent physics based understanding of the shunt leakage problem in a-Si:H cells, and discuss its implications on cell and module level.Sourabh Dongaonkar is with School of Electrical and Computer Engineering, Purdue University, West Lafayette, INKarthik Y and Souvik...
ECE 606 Lecture 39: Reliability of MOSFET
out of 5 stars
28 Apr 2009 | | Contributor(s):: Muhammad A. Alam
ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET
14 Nov 2008 | | Contributor(s):: Muhammad A. Alam
Guest lecturer: Muhammad A. Alam.
ECE 695A Lecture 10: NBTI Time Dependence -- Frequency and Duty Cycle Dependencies
06 Feb 2013 | | Contributor(s):: Muhammad Alam
Outline:NBTI stress and relaxation by R-D modelFrequency independence and lifetime projectionDuty cycle dependenceThe magic of measurementConclusions
ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation
08 Feb 2013 | | Contributor(s):: Muhammad Alam
ECE 695A Lecture 11: Temperature Dependence of NBTI
07 Feb 2013 | | Contributor(s):: Muhammad Alam
Outline:Review: Temperature activation & NBTITemperature dependent forward/reverse ratesTemperature dependence of diffusion coefficientMaterial dependence of activation energyConclusion
ECE 695A Lecture 11R: Review Questions
Review Questions:Does Einstein relationship hold for activated diffusion?People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you support the argument?What assumption did I make regarding diffusion of H in SiO2 that makes the derivation...
ECE 695A Lecture 12: Field Dependence of NBTI
Outline:Background: Field dependent degradationComponents of field-dependent dissociation:Interpreting experimentsVoltage acceleration factorsConclusion
ECE 695A Lecture 12R: Review Questions
Review Questions:Explain the difference between local field and global field within an oxide. Explain physically why electric field decreases bond strength.How does the dissociation process becomes non-Arrhenius?Do you think the diffusion and repassivation will also become non-Arrhenius when...
ECE 695A Lecture 13: Introductory Lecture on HCI Degradation
19 Feb 2013 | | Contributor(s):: Muhammad Alam
Outline:Background and features of HCI DegradationPhenomenological observationsOrigin of Hot carriersTheory of Si-H Bond DissociationTheory of Si-O Bond DissociationConclusions
ECE 695A Lecture 13R: Review Questions
Review Questions:Both SiH and SiO are involved in HCI degradation. Give two evidences.Why doesn’t HCI occur during NBTI stress condition?I suggested that HCI curve can shifted horizontally to form a universal curve, do you believe that I can do a corresponding vertical shift to form the...
ECE 695A Lecture 14a: Voltage Dependent HCI I
Outline:Background and Empirical ObservationsTheory of Hot Carriers: Hydrodynamic ModelTheory of Hot Carriers: Monte Carlo ModelTheory of Hot Carriers: Universal ScalingConclusionAppendices
ECE 695A Lecture 14b: Voltage Dependent HCI II
ECE 695A Lecture 14R: Review Questions
Review QuestionsWhy is Isub called a thermometer of hot electron distribution? Why can you not simply measure hot electrons by looking at the drain current?What are the three methods of HCI voltage acceleration?If theory of universal scaling is so good, why not use it all the time? (Hint: Think...
ECE 695A Lecture 15: Off-state HCI Degradation
Outline:ON vs. OFF State HCI DegradationOrigin of hot carriers at off-stateSiH vs. SiO – who is getting broken? Voltage acceleration factors by scalingConclusions
ECE 695A Lecture 15R: Review Questions
20 Feb 2013 | | Contributor(s):: Muhammad Alam
Review Questions:Why is BTBT tunneling important for OFF-state HCI, but nor for ON-state HCI?What type of bond dissociation dominated DeMOS degradation? Provide two supporting arguments. Will universality hold of SiH and SiO bond dissociation occur in equal proportion?Do you expect NBTI to be...
ECE 695A Lecture 16: Review Questions
22 Feb 2013 | | Contributor(s):: Muhammad Alam
Review QuestionWhat is the difference between hot atom dissociation vs. cold atom dissociation?.Many experiments are reported at 77K and 295K. Why these temperatures?.Why is there such a big difference between VT degradation and NIT degradation?.Impact ionization threshold is significantly...
ECE 695A Lecture 16: Temperature Dependence of HCI
Outline:Empirical observations regarding HCITheory of bond dissociation: MVE vs. RRKHot carrier dissociation of SiH bondsHot carrier dissociation of SiO bondsConclusions
ECE 695A Lecture 17: Subthreshold and Idlin Methods
21 Feb 2013 | | Contributor(s):: Muhammad Alam
ECE 695A Lecture 17R: Review Questions
01 Mar 2013 | | Contributor(s):: Muhammad Alam
Review Questions:What is wrong with using C-V measurement methods exclusively for NBTI and HCI degradation?Why do people like to use C-V techniques? What method would you use for HCI measurement?HCI does not relax. Why would you still want to use on-the-fly type methods? (Hint: Think about Drain...