Tags: reliability

Resources (41-60 of 98)

  1. ECE 695A Lecture 17: Subthreshold and Idlin Methods

    21 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    https://nanohub.org/resources/16965

  2. ECE 695A Lecture 15R: Review Questions

    20 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Why is BTBT tunneling important for OFF-state HCI, but nor for ON-state HCI? What type of bond dissociation dominated DeMOS degradation? Provide two supporting arguments....

    https://nanohub.org/resources/16933

  3. ECE 695A Lecture 14a: Voltage Dependent HCI I

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and Empirical Observations Theory of Hot Carriers: Hydrodynamic Model Theory of Hot Carriers: Monte Carlo Model Theory of Hot Carriers: Universal...

    https://nanohub.org/resources/16895

  4. ECE 695A Lecture 14b: Voltage Dependent HCI II

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and Empirical Observations Theory of Hot Carriers: Hydrodynamic Model Theory of Hot Carriers: Monte Carlo Model Theory of Hot Carriers: Universal...

    https://nanohub.org/resources/16896

  5. ECE 695A Lecture 14R: Review Questions

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions Why is Isub called a thermometer of hot electron distribution? Why can you not simply measure hot electrons by looking at the drain current? What are the three methods of...

    https://nanohub.org/resources/16897

  6. ECE 695A Lecture 15: Off-state HCI Degradation

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: ON vs. OFF State HCI Degradation Origin of hot carriers at off-state SiH vs. SiO – who is getting broken? Voltage acceleration factors by scaling Conclusions

    https://nanohub.org/resources/16919

  7. ECE 695A Lecture 16: Temperature Dependence of HCI

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Empirical observations regarding HCI Theory of bond dissociation: MVE vs. RRK Hot carrier dissociation of SiH bonds Hot carrier dissociation of SiO bonds Conclusions

    https://nanohub.org/resources/16920

  8. ECE 695A Lecture 13: Introductory Lecture on HCI Degradation

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and features of HCI Degradation Phenomenological observations Origin of Hot carriers Theory of Si-H Bond Dissociation Theory of Si-O Bond...

    https://nanohub.org/resources/16887

  9. ECE 695A Lecture 13R: Review Questions

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Both SiH and SiO are involved in HCI degradation. Give two evidences. Why doesn’t HCI occur during NBTI stress condition? I suggested that HCI curve can shifted...

    https://nanohub.org/resources/16888

  10. ECE 695A Lecture 5R: Review Questions

    12 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: What is the difference between coordination and composition? Is periodicity essential for a defect-free structure? Why can’t the amorphous material have arbitrary ring...

    https://nanohub.org/resources/16788

  11. ECE 695A Lecture 11R: Review Questions

    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Does Einstein relationship hold for activated diffusion? People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you...

    https://nanohub.org/resources/16786

  12. ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation

    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    https://nanohub.org/resources/16787

  13. ECE 695A Lecture 12: Field Dependence of NBTI

    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background: Field dependent degradation Components of field-dependent dissociation: Interpreting experiments Voltage acceleration factors Conclusion

    https://nanohub.org/resources/16789

  14. ECE 695A Lecture 12R: Review Questions

    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Explain the difference between local field and global field within an oxide. Explain physically why electric field decreases bond strength. How does the dissociation...

    https://nanohub.org/resources/16790

  15. ECE 695A Lecture 9R: Review Questions

    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Does NBTI power-exponent depend on voltage or temperature? Do you expect the NBTI power-exponent to be larger or smaller if trapping is important? How does one know that...

    https://nanohub.org/resources/16778

  16. ECE 695A Lecture 11: Temperature Dependence of NBTI

    07 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Review: Temperature activation & NBTI Temperature dependent forward/reverse rates Temperature dependence of diffusion coefficient Material dependence of activation...

    https://nanohub.org/resources/16774

  17. ECE 695A Lecture 10: NBTI Time Dependence -- Frequency and Duty Cycle Dependencies

    06 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: NBTI stress and relaxation by R-D model Frequency independence and lifetime projection Duty cycle dependence The magic of measurement Conclusions

    https://nanohub.org/resources/16668

  18. ECE 695A Lecture 9: NBTI Time Dependence -- Stress Phase

    06 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background: Time-dependent degradation The Reaction-Diffusion model Approximate solution to R-D model in stress phase Degradation free transistors Conclusions

    https://nanohub.org/resources/16667

  19. ECE 695A Lecture 6: Defects in the Bulk and at Interfaces

    01 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Strain in materials/origin of defects Examples: bulk defects Examples: interface defects Measurements Conclusions

    https://nanohub.org/resources/16608

  20. ECE 695A Lecture 8: Phenomenological Observations for NBTI

    01 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Qualitative observations Time, voltage, temperature dependencies Material dependence Circuit implications

    https://nanohub.org/resources/16665