Tags: reliability

Resources (61-80 of 101)

  1. ECE 695A Lecture 9: NBTI Time Dependence -- Stress Phase

    06 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Background: Time-dependent degradationThe Reaction-Diffusion modelApproximate solution to R-D model in stress phaseDegradation free transistorsConclusions

  2. ECE 695A Lecture 6: Defects in the Bulk and at Interfaces

    01 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Strain in materials/origin of defectsExamples: bulk defectsExamples: interface defectsMeasurementsConclusions

  3. ECE 695A Lecture 8: Phenomenological Observations for NBTI

    01 Feb 2013 | | Contributor(s):: Muhammad Alam

    Outline:Qualitative observationsTime, voltage, temperature dependenciesMaterial dependenceCircuit implications

  4. ECE 695A Lecture 8R: Review Questions

    01 Feb 2013 | | Contributor(s):: Muhammad Alam

    What is the distinction between BTI and NBTI phenomena?What does it mean that a process is thermally activated?What is the difference between parametric failure and catastrophic failure? Give examples. What are the time-characteristics of trapping, BTI, and NBTI?Which device will have poorer...

  5. ECE 695A Lecture 5: Amorphous Material/Interfaces

    29 Jan 2013 | | Contributor(s):: Muhammad Alam

    Outline:Amorphous vs. crystalline materialsDefect-free amorphous materialOrigin of defects (Maxwell’s relation)Conclusions

  6. ECE 695A Lecture 7: Trapping in Pre-existing Traps

    29 Jan 2013 | | Contributor(s):: Muhammad Alam

    Outline:Pre-existing vs. stress-induced trapsVoltage-shift in pre-existing bulk/interface trapsRandom Telegraph Noise, 1/f noiseConclusion

  7. ECE 695A Lecture 7A: Appendix - Theory of Stochastic Distribution

    29 Jan 2013 | | Contributor(s):: Muhammad Alam

    Supplemental information for Lecture 7: Trapping in Pre-existing Traps

  8. ECE 695A Lecture 7R: Review Questions

    29 Jan 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Why are there more types of defects in crystals than in amorphous material?From the perspective of Maxwell’s relation, how does H reduce defect density?Why is HfO2 so defective --- and why do you want to use it?Which type of traps involve faster trapping/detrapping, Pb center or...

  9. ECE 695A Lecture 3: Reliability as a Threshold Problem

    17 Jan 2013 | | Contributor(s):: Muhammad Alam

    Outline:Reliability as a Threshold Problem: Empirical vs. Physical Models‘Blind Fish in a Waterfall’ as a prototype for Accelerated Testing/Statistical distributionFour elements of Physical ReliabilityConclusions

  10. ECE 695A Lecture 4: Structures and Defects in Crystals

    17 Jan 2013 | | Contributor(s):: Muhammad Alam

    Outline:Background informationDefect-free crystal structuresDefects in crystalsConclusions

  11. ECE 695A Reliability Physics of Nanotransistors

    17 Jan 2013 | | Contributor(s):: Muhammad Alam

    This course will focus on the physics of reliability of small semiconductor devices. In traditional courses on device physics, the students learn how to compute current through a device when a voltage is applied.

  12. ECE 695A Lecture 2: A Brief History of Reliability and Types of Reliability Models

    16 Jan 2013 | | Contributor(s):: Muhammad Alam

    Outline:Reliability as a General PhenomenaA Brief History of ReliabilityApproaches to Reliability PhysicsConclusions

  13. ECE 695A Lecture 1: Reliability of Nanoelectronic Devices

    11 Jan 2013 | | Contributor(s):: Muhammad Alam

    Outline:Evolving Landscape of ElectronicsPerformance, Variability, and ReliabilityClassification of ReliabilityCourse InformationConclusions

  14. In Search of a Better MEMS-Switch: An Elementary theory of how nanostructured dielectrics may soften landing, increase travel range, and decrease energy dissipation

    06 Jun 2012 | | Contributor(s):: Muhammad Alam

    In this talk, I will discuss an elementary theory of the role of nanostructured electrodes in addressing some of the challenges from a fundamentally different perspective. The goal is to start a conversation regarding the viability of the approaches suggested and see if the perspective offered...

  15. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)

    28 Mar 2012 | | Contributor(s):: Souvik Mahapatra

    This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner...

  16. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)

    28 Mar 2012 | | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

  17. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling

    28 Mar 2012 | | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

  18. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)

    28 Mar 2012 | | Contributor(s):: Souvik Mahapatra

  19. Verification and Validation in Simulations of Complex Engineered Systems

    03 Jan 2012 | | Contributor(s):: Robert Moser

    Computational simulation is a ubiquitous tool in engineering. Further, the explosion of computational capabilities over the last several decades has resulted in the use of computational models of unprecedented complexity to make critical design and operation decisions. One potential benefit...

  20. Theory and characterization of random defect formation and its implication in variability of nanoscale transistors

    30 Sep 2011 | | Contributor(s):: Ahmad Ehteshamul Islam

    Over the last 50 years, carrier transport has been the central research topic in the semiconductor area. The outcome was a dramatic improvement in the performance of a transistor, which is one of the basic building blocks in almost all the modern electronic devices. However, nanoscale dimensions...