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ECE 695A Lecture 6: Defects in the Bulk and at Interfaces
01 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Strain in materials/origin of defects
Examples: bulk defects
Examples: interface defects
ECE 695A Lecture 8: Phenomenological Observations for NBTI
Time, voltage, temperature dependencies
ECE 695A Lecture 8R: Review Questions
What is the distinction between BTI and NBTI phenomena?
What does it mean that a process is thermally activated?
What is the difference between parametric failure and catastrophic failure?...
ECE 695A Lecture 5: Amorphous Material/Interfaces
29 Jan 2013 | Online Presentations | Contributor(s): Muhammad Alam
Amorphous vs. crystalline materials
Defect-free amorphous material
Origin of defects (Maxwell’s relation)
ECE 695A Lecture 7: Trapping in Pre-existing Traps
Pre-existing vs. stress-induced traps
Voltage-shift in pre-existing bulk/interface traps
Random Telegraph Noise, 1/f noise
ECE 695A Lecture 7A: Appendix - Theory of Stochastic Distribution
Supplemental information for Lecture 7: Trapping in Pre-existing Traps
ECE 695A Lecture 7R: Review Questions
Why are there more types of defects in crystals than in amorphous material?
From the perspective of Maxwell’s relation, how does H reduce defect density?
Why is HfO2 so...
ECE 695A Lecture 3: Reliability as a Threshold Problem
17 Jan 2013 | Online Presentations | Contributor(s): Muhammad Alam
Reliability as a Threshold Problem: Empirical vs. Physical Models
‘Blind Fish in a Waterfall’ as a prototype for Accelerated Testing/Statistical distribution
Four elements of...
ECE 695A Lecture 4: Structures and Defects in Crystals
Defect-free crystal structures
Defects in crystals
ECE 695A Reliability Physics of Nanotransistors
17 Jan 2013 | Courses | Contributor(s): Muhammad Alam
This course will focus on the physics of reliability of small semiconductor devices. In traditional courses on device physics, the students learn how to compute current through a device when a...
ECE 695A Lecture 2: A Brief History of Reliability and Types of Reliability Models
16 Jan 2013 | Online Presentations | Contributor(s): Muhammad Alam
Reliability as a General Phenomena
A Brief History of Reliability
Approaches to Reliability Physics
ECE 695A Lecture 1: Reliability of Nanoelectronic Devices
11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Alam
Evolving Landscape of Electronics
Performance, Variability, and Reliability
Classification of Reliability
In Search of a Better MEMS-Switch: An Elementary theory of how nanostructured dielectrics may soften landing, increase travel range, and decrease energy dissipation
06 Jun 2012 | Online Presentations | Contributor(s): Muhammad Alam
In this talk, I will discuss an elementary theory of the role of nanostructured electrodes in addressing some of the challenges from a fundamentally different perspective. The goal is to start a...
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)
28 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra
This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it...
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has...
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling
28 Mar 2012 | Courses | Contributor(s): Souvik Mahapatra
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)
Verification and Validation in Simulations of Complex Engineered Systems
03 Jan 2012 | Online Presentations | Contributor(s): Robert Moser
Computational simulation is a ubiquitous tool in engineering. Further, the explosion of computational capabilities over the last several decades has resulted in the use of computational models of...
Theory and characterization of random defect formation and its implication in variability of nanoscale transistors
30 Sep 2011 | Papers | Contributor(s): Ahmad Ehteshamul Islam
Over the last 50 years, carrier transport has been the central research topic in the semiconductor area. The outcome was a dramatic improvement in the performance of a transistor, which is one of...
A Physical Model for Non-Ohmic Shunt Conduction and Metastability in Amorphous Silicon Solar Cells
16 Aug 2011 | Online Presentations | Contributor(s): Sourabh Dongaonkar, Souvik Mahapatra, Karthik Yogendra, Muhammad Alam
In this talk we develop a coherent physics based understanding of the shunt leakage problem in a-Si:H cells, and discuss its implications on cell and module level.
Sourabh Dongaonkar is with...