Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)
11 May 2011 | | Contributor(s):: Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to...
Lecture 9: Breakdown in Thick Dielectrics
05 Apr 2010 | | Contributor(s):: Muhammad A. Alam
Outline:Breakdown in gas dielectric and Paschen’s lawSpatial and temporal dynamics during breakdownBreakdown in bulk oxides: puzzleTheory of pre-existing defects: Thin oxidesTheory of pre-existing defects: thick oxidesConclusions
Lecture 8: Mechanics of Defect Generation and Gate Dielectric Breakdown
10 Mar 2010 | | Contributor(s):: Muhammad A. Alam
Lecture 10: Interface Damage & Negative Bias Temperature Instability
02 Feb 2010 | | Contributor(s):: Muhammad A. Alam
Outline:Background informationNBTI interpreted by R-D modelThe act of measurement and observed quantityNBTI vs. Light-induced DegradationPossibility of Degradation-free TransistorsConclusions
Lecture 6: 3D Nets in a 3D World: Bulk Heterostructure Solar Cells
27 Oct 2009 | | Contributor(s):: Muhammad A. Alam
Outline:Introduction: definitions and review
Reaction diffusion in fractal volumesCarrier transport in BH solar cellsAll phase transitions are not fractalConclusions
Lecture 5: 2D Nets in a 3D World: Basics of Nanobiosensors and Fractal Antennae
Outline:Background: A different type of transport problem
Example: Classical biosensorsFractal dimension and cantor transformExample: fractal nanobiosensors Conclusions
Appendix: Transparent Electrodes and Antenna
Lecture 4: Stick Percolation and Nanonet Electronics
26 Oct 2009 | | Contributor(s):: Muhammad A. Alam
Outline:Stick percolation and nanonet transistorsShort channel nanonet transistorsLong channel nanonet transistorsTransistors at high voltagesConclusions
2009 NCN@Purdue Summer School: Electronics from the Bottom Up
22 Sep 2009 | | Contributor(s):: Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller
The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on laboratory session will be available in the afternoons.
Nanostructured Electronic Devices: Percolation and Reliability
17 Sep 2009 | | Contributor(s):: Muhammad A. Alam
In this series of lectures introduces a simple theoretical framework for treating randomness and variability in emerging nanostructured electronic devices for wide ranging applications – all within an unified framework of spatial and temporal percolation. The problems considered involve...
Lecture 1: Percolation and Reliability of Electronic Devices
Lecture 2: Threshold, Islands, and Fractals
Lecture 3: Electrical Conduction in Percolative Systems
The Challenges of Micro-System Product Development
05 Jun 2009 | | Contributor(s):: James J. Allen
This talk will discuss the historical development of micro‐system technology, the products that have been developed and the challenges to development of a reliable product.
ECE 606 Lecture 39: Reliability of MOSFET
out of 5 stars
28 Apr 2009 | | Contributor(s):: Muhammad A. Alam
Experiences with nonintrusive polynomial Chaos and stochastic collocation methods for uncertainty analysis and design
13 Mar 2009 | | Contributor(s):: Michael S. Eldred
Non—intrusive polynomial chaos expansion (PCE) and stochastic collocation (SC) methods are attractive techniques for uncertainty quantification due to their abilities to produce functional representations of stochastic variability and to achieve exponential convergence rates in statistics of...
ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET
14 Nov 2008 | | Contributor(s):: Muhammad A. Alam
Guest lecturer: Muhammad A. Alam.
PRISM Seminar Series
05 Nov 2008 | | Contributor(s):: Jayathi Murthy, Alejandro Strachan
Welcome to the PRISM Seminar Series.PRIMS: NNSA Center for Prediction of Reliability, Integrity and Survivability of Microsystems, is a university center funded by the Department of Energy's National Nuclear Security Administration (NNSA) under their Advanced Simulation and Computing (ASC)...
From density functional theory to defect level in silicon: Does the “band gap problem” matter?
01 Oct 2008 | | Contributor(s):: Peter A. Schultz
Modeling the electrical effects of radiation damage in semiconductor devices requires a detailed description of the properties of point defects generated during and subsequent to irradiation. Such modeling requires physical parameters, such as defect electronic levels, to describe carrier...
Reliability Physics of Nanoscale Transistors
27 Nov 2007 | | Contributor(s):: Muhammad A. Alam
This course is now offered on nanoHUB as ECE 695A Reliability Physics of Nanotransistors.
Modeling Interface-defect Generation (MIG)
18 Jul 2006 | | Contributor(s):: Ahmad Ehteshamul Islam, HALDUN KUFLUOGLU, Muhammad A. Alam
Analyzes device reliability based on NBTI