Tags: reliability

Resources (81-100 of 100)

  1. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)

    11 May 2011 | | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to...

  2. Lecture 9: Breakdown in Thick Dielectrics

    05 Apr 2010 | | Contributor(s):: Muhammad A. Alam

    Outline:Breakdown in gas dielectric and Paschen’s lawSpatial and temporal dynamics during breakdownBreakdown in bulk oxides: puzzleTheory of pre-existing defects: Thin oxidesTheory of pre-existing defects: thick oxidesConclusions

  3. Lecture 8: Mechanics of Defect Generation and Gate Dielectric Breakdown

    10 Mar 2010 | | Contributor(s):: Muhammad A. Alam

  4. Lecture 10: Interface Damage & Negative Bias Temperature Instability

    02 Feb 2010 | | Contributor(s):: Muhammad A. Alam

    Outline:Background informationNBTI interpreted by R-D modelThe act of measurement and observed quantityNBTI vs. Light-induced DegradationPossibility of Degradation-free TransistorsConclusions

  5. Lecture 6: 3D Nets in a 3D World: Bulk Heterostructure Solar Cells

    27 Oct 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Introduction: definitions and review
Reaction diffusion in fractal volumesCarrier transport in BH solar cellsAll phase transitions are not fractalConclusions

  6. Lecture 5: 2D Nets in a 3D World: Basics of Nanobiosensors and Fractal Antennae

    27 Oct 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Background: A different type of transport problem
Example: Classical biosensorsFractal dimension and cantor transformExample: fractal nanobiosensors Conclusions
Appendix: Transparent Electrodes and Antenna

  7. Lecture 4: Stick Percolation and Nanonet Electronics

    26 Oct 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Stick percolation and nanonet transistorsShort channel nanonet transistorsLong channel nanonet transistorsTransistors at high voltagesConclusions

  8. 2009 NCN@Purdue Summer School: Electronics from the Bottom Up

    22 Sep 2009 | | Contributor(s):: Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller

    The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on laboratory session will be available in the afternoons.

  9. Nanostructured Electronic Devices: Percolation and Reliability

    17 Sep 2009 | | Contributor(s):: Muhammad A. Alam

    In this series of lectures introduces a simple theoretical framework for treating randomness and variability in emerging nanostructured electronic devices for wide ranging applications – all within an unified framework of spatial and temporal percolation. The problems considered involve...

  10. Lecture 1: Percolation and Reliability of Electronic Devices

    17 Sep 2009 | | Contributor(s):: Muhammad A. Alam

  11. Lecture 2: Threshold, Islands, and Fractals

    17 Sep 2009 | | Contributor(s):: Muhammad A. Alam

  12. Lecture 3: Electrical Conduction in Percolative Systems

    17 Sep 2009 | | Contributor(s):: Muhammad A. Alam

  13. The Challenges of Micro-System Product Development

    05 Jun 2009 | | Contributor(s):: James J. Allen

    This talk will discuss the historical development of micro‐system technology, the products that have been developed and the challenges to development of a reliable product.

  14. ECE 606 Lecture 39: Reliability of MOSFET

    28 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  15. Experiences with nonintrusive polynomial Chaos and stochastic collocation methods for uncertainty analysis and design

    13 Mar 2009 | | Contributor(s):: Michael S. Eldred

    Non—intrusive polynomial chaos expansion (PCE) and stochastic collocation (SC) methods are attractive techniques for uncertainty quantification due to their abilities to produce functional representations of stochastic variability and to achieve exponential convergence rates in statistics of...

  16. ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET

    14 Nov 2008 | | Contributor(s):: Muhammad A. Alam

    Guest lecturer: Muhammad A. Alam.

  17. PRISM Seminar Series

    05 Nov 2008 | | Contributor(s):: Jayathi Murthy, Alejandro Strachan

    Welcome to the PRISM Seminar Series.PRIMS: NNSA Center for Prediction of Reliability, Integrity and Survivability of Microsystems, is a university center funded by the Department of Energy's National Nuclear Security Administration (NNSA) under their Advanced Simulation and Computing (ASC)...

  18. From density functional theory to defect level in silicon: Does the “band gap problem” matter?

    01 Oct 2008 | | Contributor(s):: Peter A. Schultz

    Modeling the electrical effects of radiation damage in semiconductor devices requires a detailed description of the properties of point defects generated during and subsequent to irradiation. Such modeling requires physical parameters, such as defect electronic levels, to describe carrier...

  19. Reliability Physics of Nanoscale Transistors

    27 Nov 2007 | | Contributor(s):: Muhammad A. Alam

    This course is now offered on nanoHUB as ECE 695A Reliability Physics of Nanotransistors.

  20. Modeling Interface-defect Generation (MIG)

    18 Jul 2006 | | Contributor(s):: Ahmad Ehteshamul Islam, HALDUN KUFLUOGLU, Muhammad A. Alam

    Analyzes device reliability based on NBTI