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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)
11 May 2011 | Online Presentations | Contributor(s): Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10...
Lecture 9: Breakdown in Thick Dielectrics
05 Apr 2010 | Online Presentations | Contributor(s): Muhammad A. Alam
Breakdown in gas dielectric and Paschen’s law
Spatial and temporal dynamics during breakdown
Breakdown in bulk oxides: puzzle
Theory of pre-existing defects: Thin oxides
Lecture 8: Mechanics of Defect Generation and Gate Dielectric Breakdown
10 Mar 2010 | Online Presentations | Contributor(s): Muhammad A. Alam
Lecture 10: Interface Damage & Negative Bias Temperature Instability
02 Feb 2010 | Online Presentations | Contributor(s): Muhammad A. Alam
NBTI interpreted by R-D model
The act of measurement and observed quantity
NBTI vs. Light-induced Degradation
Possibility of Degradation-free...
Lecture 6: 3D Nets in a 3D World: Bulk Heterostructure Solar Cells
27 Oct 2009 | Online Presentations | Contributor(s): Muhammad A. Alam
Lecture 5: 2D Nets in a 3D World: Basics of Nanobiosensors and Fractal Antennae
Lecture 4: Stick Percolation and Nanonet Electronics
26 Oct 2009 | Online Presentations | Contributor(s): Muhammad A. Alam
Stick percolation and nanonet transistors
Short channel nanonet transistors
Long channel nanonet transistors
Transistors at high voltages
2009 NCN@Purdue Summer School: Electronics from the Bottom Up
22 Sep 2009 | Workshops | Contributor(s): Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller
The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on...
Nanostructured Electronic Devices: Percolation and Reliability
17 Sep 2009 | Courses | Contributor(s): Muhammad A. Alam
In this series of lectures introduces a simple theoretical framework for treating randomness and variability in emerging nanostructured electronic devices for wide ranging applications – all...
Lecture 1: Percolation and Reliability of Electronic Devices
17 Sep 2009 | Online Presentations | Contributor(s): Muhammad A. Alam
Network for Computational Nanotechnology,
Lecture 2: Threshold, Islands, and Fractals
Lecture 3: Electrical Conduction in Percolative Systems
The Challenges of Micro-System Product Development
05 Jun 2009 | Online Presentations | Contributor(s): James J. Allen
This talk will discuss the historical development of micro‐system technology, the products that have been developed and the challenges to development of a reliable product.
ECE 606 Lecture 39: Reliability of MOSFET
0.0 out of 5 stars
28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam
Experiences with nonintrusive polynomial Chaos and stochastic collocation methods for uncertainty analysis and design
13 Mar 2009 | Online Presentations | Contributor(s): Michael S. Eldred
Non—intrusive polynomial chaos expansion (PCE) and stochastic collocation (SC) methods are attractive
techniques for uncertainty quantification due to their abilities to produce functional...
ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET
14 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam
Guest lecturer: Muhammad A. Alam.
PRISM Seminar Series
05 Nov 2008 | Series | Contributor(s): Jayathi Murthy, Alejandro Strachan
Welcome to the PRISM Seminar Series.
PRIMS: NNSA Center for Prediction of Reliability, Integrity and Survivability of Microsystems, is a university center funded by the Department of Energy's...
From density functional theory to defect level in silicon: Does the “band gap problem” matter?
3.0 out of 5 stars
01 Oct 2008 | Online Presentations | Contributor(s): Peter A. Schultz
Modeling the electrical effects of radiation damage in semiconductor devices requires a
detailed description of the properties of point defects generated during and subsequent to
Reliability Physics of Nanoscale Transistors
5.0 out of 5 stars
27 Nov 2007 | Courses | Contributor(s): Muhammad A. Alam
This course is now offered on nanoHUB as ECE 695A Reliability Physics of Nanotransistors.
Modeling Interface-defect Generation (MIG)
4.0 out of 5 stars
28 Aug 2006 | Tools | Contributor(s): Ahmad Ehteshamul Islam, Haldun Kufluoglu, Muhammad A. Alam
Analyzes device reliability based on NBTI