On Sunday, April 23 at 7 AM EDT (11 AM UTC), nanoHUB will be be unavailable due to scheduled maintenance and all open tool sessions will be terminated. Please plan accordingly.
Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)
11 May 2011 | Online Presentations | Contributor(s): Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10...
Lecture 9: Breakdown in Thick Dielectrics
05 Apr 2010 | Online Presentations | Contributor(s): Muhammad A. Alam
Breakdown in gas dielectric and Paschen’s law
Spatial and temporal dynamics during breakdown
Breakdown in bulk oxides: puzzle
Theory of pre-existing defects: Thin oxides
Lecture 8: Mechanics of Defect Generation and Gate Dielectric Breakdown
10 Mar 2010 | Online Presentations | Contributor(s): Muhammad A. Alam
Lecture 10: Interface Damage & Negative Bias Temperature Instability
02 Feb 2010 | Online Presentations | Contributor(s): Muhammad A. Alam
NBTI interpreted by R-D model
The act of measurement and observed quantity
NBTI vs. Light-induced Degradation
Possibility of Degradation-free...
Lecture 6: 3D Nets in a 3D World: Bulk Heterostructure Solar Cells
27 Oct 2009 | Online Presentations | Contributor(s): Muhammad A. Alam
Lecture 5: 2D Nets in a 3D World: Basics of Nanobiosensors and Fractal Antennae
Lecture 4: Stick Percolation and Nanonet Electronics
26 Oct 2009 | Online Presentations | Contributor(s): Muhammad A. Alam
Stick percolation and nanonet transistors
Short channel nanonet transistors
Long channel nanonet transistors
Transistors at high voltages
2009 NCN@Purdue Summer School: Electronics from the Bottom Up
22 Sep 2009 | Workshops | Contributor(s): Supriyo Datta, Mark Lundstrom, Muhammad A. Alam, Joerg Appenzeller
The school will consist of two lectures in the morning on the Nanostructured Electronic Devices: Percolation and Reliability and an afternoon lecture on Graphene Physics and Devices. A hands on...
Nanostructured Electronic Devices: Percolation and Reliability
17 Sep 2009 | Courses | Contributor(s): Muhammad A. Alam
In this series of lectures introduces a simple theoretical framework for treating randomness and variability in emerging nanostructured electronic devices for wide ranging applications – all...
Lecture 1: Percolation and Reliability of Electronic Devices
17 Sep 2009 | Online Presentations | Contributor(s): Muhammad A. Alam
Network for Computational Nanotechnology,
Lecture 2: Threshold, Islands, and Fractals
Lecture 3: Electrical Conduction in Percolative Systems
The Challenges of Micro-System Product Development
05 Jun 2009 | Online Presentations | Contributor(s): James J. Allen
This talk will discuss the historical development of micro‐system technology, the products that have been developed and the challenges to development of a reliable product.
ECE 606 Lecture 39: Reliability of MOSFET
0.0 out of 5 stars
28 Apr 2009 | Online Presentations | Contributor(s): Muhammad A. Alam
Experiences with nonintrusive polynomial Chaos and stochastic collocation methods for uncertainty analysis and design
13 Mar 2009 | Online Presentations | Contributor(s): Michael S. Eldred
Non—intrusive polynomial chaos expansion (PCE) and stochastic collocation (SC) methods are attractive
techniques for uncertainty quantification due to their abilities to produce functional...
ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET
14 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam
Guest lecturer: Muhammad A. Alam.
PRISM Seminar Series
05 Nov 2008 | Series | Contributor(s): Jayathi Murthy, Alejandro Strachan
Welcome to the PRISM Seminar Series.
PRIMS: NNSA Center for Prediction of Reliability, Integrity and Survivability of Microsystems, is a university center funded by the Department of Energy's...
From density functional theory to defect level in silicon: Does the “band gap problem” matter?
3.0 out of 5 stars
01 Oct 2008 | Online Presentations | Contributor(s): Peter A. Schultz
Modeling the electrical effects of radiation damage in semiconductor devices requires a
detailed description of the properties of point defects generated during and subsequent to
Reliability Physics of Nanoscale Transistors
5.0 out of 5 stars
27 Nov 2007 | Courses | Contributor(s): Muhammad A. Alam
This course is now offered on nanoHUB as ECE 695A Reliability Physics of Nanotransistors.
Modeling Interface-defect Generation (MIG)
4.0 out of 5 stars
28 Aug 2006 | Tools | Contributor(s): Ahmad Ehteshamul Islam, Haldun Kufluoglu, Muhammad A. Alam
Analyzes device reliability based on NBTI