Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
ECE 695A Lecture 37: Radiation Induced Damage – An overview
20 Apr 2013 | Online Presentations | Contributor(s): Muhammad Alam
Introduction and short history of radiation damage
Radiation damage in various types of components
Sources of radiation
A basic calculation and simulation...
ECE 695A Lecture 37R: Review Questions
Why is SOI more radiation hard compared to bulk devices? What do you feel about radiation hardness of FINFET?
What type of radiation issues could arise for thin-body...
ECE 695A Lecture 3: Reliability as a Threshold Problem
17 Jan 2013 | Online Presentations | Contributor(s): Muhammad Alam
Reliability as a Threshold Problem: Empirical vs. Physical Models
‘Blind Fish in a Waterfall’ as a prototype for Accelerated Testing/Statistical distribution
Four elements of...
ECE 695A Lecture 4: Structures and Defects in Crystals
Defect-free crystal structures
Defects in crystals
ECE 695A Lecture 5: Amorphous Material/Interfaces
29 Jan 2013 | Online Presentations | Contributor(s): Muhammad Alam
Amorphous vs. crystalline materials
Defect-free amorphous material
Origin of defects (Maxwell’s relation)
ECE 695A Lecture 5R: Review Questions
12 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
What is the difference between coordination and composition?
Is periodicity essential for a defect-free structure?
Why can’t the amorphous material have arbitrary ring...
ECE 695A Lecture 6: Defects in the Bulk and at Interfaces
01 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Strain in materials/origin of defects
Examples: bulk defects
Examples: interface defects
ECE 695A Lecture 7: Trapping in Pre-existing Traps
Pre-existing vs. stress-induced traps
Voltage-shift in pre-existing bulk/interface traps
Random Telegraph Noise, 1/f noise
ECE 695A Lecture 7A: Appendix - Theory of Stochastic Distribution
Supplemental information for Lecture 7: Trapping in Pre-existing Traps
ECE 695A Lecture 7R: Review Questions
Why are there more types of defects in crystals than in amorphous material?
From the perspective of Maxwell’s relation, how does H reduce defect density?
Why is HfO2 so...
ECE 695A Lecture 8: Phenomenological Observations for NBTI
Time, voltage, temperature dependencies
ECE 695A Lecture 8R: Review Questions
What is the distinction between BTI and NBTI phenomena?
What does it mean that a process is thermally activated?
What is the difference between parametric failure and catastrophic failure?...
ECE 695A Lecture 9: NBTI Time Dependence -- Stress Phase
06 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Background: Time-dependent degradation
The Reaction-Diffusion model
Approximate solution to R-D model in stress phase
Degradation free transistors
ECE 695A Lecture 9R: Review Questions
08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Does NBTI power-exponent depend on voltage or temperature?
Do you expect the NBTI power-exponent to be larger or smaller if trapping is important?
How does one know that...
ECE 695A Reliability Physics of Nanotransistors
17 Jan 2013 | Courses | Contributor(s): Muhammad Alam
This course will focus on the physics of reliability of small semiconductor devices. In traditional courses on device physics, the students learn how to compute current through a device when a...
Experiences with nonintrusive polynomial Chaos and stochastic collocation methods for uncertainty analysis and design
0.0 out of 5 stars
13 Mar 2009 | Online Presentations | Contributor(s): Michael S. Eldred
Non—intrusive polynomial chaos expansion (PCE) and stochastic collocation (SC) methods are attractive
techniques for uncertainty quantification due to their abilities to produce functional...
From density functional theory to defect level in silicon: Does the “band gap problem” matter?
3.0 out of 5 stars
01 Oct 2008 | Online Presentations | Contributor(s): Peter A. Schultz
Modeling the electrical effects of radiation damage in semiconductor devices requires a
detailed description of the properties of point defects generated during and subsequent to
In Search of a Better MEMS-Switch: An Elementary theory of how nanostructured dielectrics may soften landing, increase travel range, and decrease energy dissipation
06 Jun 2012 | Online Presentations | Contributor(s): Muhammad Alam
In this talk, I will discuss an elementary theory of the role of nanostructured electrodes in addressing some of the challenges from a fundamentally different perspective. The goal is to start a...
Jeremy M Gernand
Lecture 10: Interface Damage & Negative Bias Temperature Instability
02 Feb 2010 | Online Presentations | Contributor(s): Muhammad A. Alam
NBTI interpreted by R-D model
The act of measurement and observed quantity
NBTI vs. Light-induced Degradation
Possibility of Degradation-free...