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Lecture 10: Interface Damage & Negative Bias Temperature Instability
02 Feb 2010 | | Contributor(s):: Muhammad A. Alam
Outline:Background informationNBTI interpreted by R-D modelThe act of measurement and observed quantityNBTI vs. Light-induced DegradationPossibility of Degradation-free TransistorsConclusions
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Lecture 1: Percolation and Reliability of Electronic Devices
17 Sep 2009 | | Contributor(s):: Muhammad A. Alam
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Lecture 2: Threshold, Islands, and Fractals
17 Sep 2009 | | Contributor(s):: Muhammad A. Alam
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Lecture 3: Electrical Conduction in Percolative Systems
17 Sep 2009 | | Contributor(s):: Muhammad A. Alam
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Lecture 4: Stick Percolation and Nanonet Electronics
26 Oct 2009 | | Contributor(s):: Muhammad A. Alam
Outline:Stick percolation and nanonet transistorsShort channel nanonet transistorsLong channel nanonet transistorsTransistors at high voltagesConclusions
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Lecture 5: 2D Nets in a 3D World: Basics of Nanobiosensors and Fractal Antennae
27 Oct 2009 | | Contributor(s):: Muhammad A. Alam
Outline:Background: A different type of transport problem
Example: Classical biosensorsFractal dimension and cantor transformExample: fractal nanobiosensors Conclusions
Appendix: Transparent Electrodes and Antenna
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Lecture 6: 3D Nets in a 3D World: Bulk Heterostructure Solar Cells
27 Oct 2009 | | Contributor(s):: Muhammad A. Alam
Outline:Introduction: definitions and review
Reaction diffusion in fractal volumesCarrier transport in BH solar cellsAll phase transitions are not fractalConclusions
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Lecture 8: Mechanics of Defect Generation and Gate Dielectric Breakdown
10 Mar 2010 | | Contributor(s):: Muhammad A. Alam
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Lecture 9: Breakdown in Thick Dielectrics
05 Apr 2010 | | Contributor(s):: Muhammad A. Alam
Outline:Breakdown in gas dielectric and Paschen’s lawSpatial and temporal dynamics during breakdownBreakdown in bulk oxides: puzzleTheory of pre-existing defects: Thin oxidesTheory of pre-existing defects: thick oxidesConclusions
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Linfeng He
https://nanohub.org/members/83280
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Long term Aging of Autonomous STructures (LAAST) Seminar Series
07 Apr 2015 | | Contributor(s):: Ali Shakouri
The Long term Aging of Autonomous STructures (LAAST) seminar series focuses on reliability and aging of devices for energy conversion, information processing or sensing.
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Modeling Interface-defect Generation (MIG)
18 Jul 2006 | | Contributor(s):: Ahmad Ehteshamul Islam, HALDUN KUFLUOGLU, Muhammad A. Alam
Analyzes device reliability based on NBTI
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Mohamed Tarek Ghoneim
Keywords: device physics, flexible electronics, nanotechnology, graphene, nonvolatile memory, reliability, CMOS, physical and electrical characterization, emerging devices, power management, VLSI,...
https://nanohub.org/members/77955
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Nanostructured Electronic Devices: Percolation and Reliability
29 Jul 2009 | | Contributor(s):: Muhammad A. Alam
In this series of lectures introduces a simple theoretical framework for treating randomness and variability in emerging nanostructured electronic devices for wide ranging applications – all within an unified framework of spatial and temporal percolation. The problems considered involve...
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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling
25 Mar 2012 | | Contributor(s):: Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...
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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)
06 May 2011 | | Contributor(s):: Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to...
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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)
26 Mar 2012 | | Contributor(s):: Souvik Mahapatra
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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)
25 Mar 2012 | | Contributor(s):: Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...
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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)
25 Mar 2012 | | Contributor(s):: Souvik Mahapatra
This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner...
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PRISM Seminar Series
05 Nov 2008 | | Contributor(s):: Jayathi Murthy, Alejandro Strachan
Welcome to the PRISM Seminar Series.PRIMS: NNSA Center for Prediction of Reliability, Integrity and Survivability of Microsystems, is a university center funded by the Department of Energy's National Nuclear Security Administration (NNSA) under their Advanced Simulation and Computing (ASC)...