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  1. Lecture 10: Interface Damage & Negative Bias Temperature Instability

    02 Feb 2010 | | Contributor(s):: Muhammad A. Alam

    Outline:Background informationNBTI interpreted by R-D modelThe act of measurement and observed quantityNBTI vs. Light-induced DegradationPossibility of Degradation-free TransistorsConclusions

  2. Lecture 1: Percolation and Reliability of Electronic Devices

    17 Sep 2009 | | Contributor(s):: Muhammad A. Alam

  3. Lecture 2: Threshold, Islands, and Fractals

    17 Sep 2009 | | Contributor(s):: Muhammad A. Alam

  4. Lecture 3: Electrical Conduction in Percolative Systems

    17 Sep 2009 | | Contributor(s):: Muhammad A. Alam

  5. Lecture 4: Stick Percolation and Nanonet Electronics

    26 Oct 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Stick percolation and nanonet transistorsShort channel nanonet transistorsLong channel nanonet transistorsTransistors at high voltagesConclusions

  6. Lecture 5: 2D Nets in a 3D World: Basics of Nanobiosensors and Fractal Antennae

    27 Oct 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Background: A different type of transport problem
Example: Classical biosensorsFractal dimension and cantor transformExample: fractal nanobiosensors Conclusions
Appendix: Transparent Electrodes and Antenna

  7. Lecture 6: 3D Nets in a 3D World: Bulk Heterostructure Solar Cells

    27 Oct 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Introduction: definitions and review
Reaction diffusion in fractal volumesCarrier transport in BH solar cellsAll phase transitions are not fractalConclusions

  8. Lecture 8: Mechanics of Defect Generation and Gate Dielectric Breakdown

    10 Mar 2010 | | Contributor(s):: Muhammad A. Alam

  9. Lecture 9: Breakdown in Thick Dielectrics

    05 Apr 2010 | | Contributor(s):: Muhammad A. Alam

    Outline:Breakdown in gas dielectric and Paschen’s lawSpatial and temporal dynamics during breakdownBreakdown in bulk oxides: puzzleTheory of pre-existing defects: Thin oxidesTheory of pre-existing defects: thick oxidesConclusions

  10. Linfeng He

    https://nanohub.org/members/83280

  11. Long term Aging of Autonomous STructures (LAAST) Seminar Series

    07 Apr 2015 | | Contributor(s):: Ali Shakouri

    The Long term Aging of Autonomous STructures (LAAST) seminar series focuses on reliability and aging of devices for energy conversion, information processing or sensing.

  12. Modeling Interface-defect Generation (MIG)

    18 Jul 2006 | | Contributor(s):: Ahmad Ehteshamul Islam, HALDUN KUFLUOGLU, Muhammad A. Alam

    Analyzes device reliability based on NBTI

  13. Mohamed Tarek Ghoneim

    Keywords: device physics, flexible electronics, nanotechnology, graphene, nonvolatile memory, reliability, CMOS, physical and electrical characterization, emerging devices, power management, VLSI,...

    https://nanohub.org/members/77955

  14. Nanostructured Electronic Devices: Percolation and Reliability

    29 Jul 2009 | | Contributor(s):: Muhammad A. Alam

    In this series of lectures introduces a simple theoretical framework for treating randomness and variability in emerging nanostructured electronic devices for wide ranging applications – all within an unified framework of spatial and temporal percolation. The problems considered involve...

  15. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling

    25 Mar 2012 | | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

  16. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)

    06 May 2011 | | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to...

  17. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)

    26 Mar 2012 | | Contributor(s):: Souvik Mahapatra

  18. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)

    25 Mar 2012 | | Contributor(s):: Souvik Mahapatra

    This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON...

  19. Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)

    25 Mar 2012 | | Contributor(s):: Souvik Mahapatra

    This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner...

  20. PRISM Seminar Series

    out of 5 stars 

    05 Nov 2008 | | Contributor(s):: Jayathi Murthy, Alejandro Strachan

    Welcome to the PRISM Seminar Series.PRIMS: NNSA Center for Prediction of Reliability, Integrity and Survivability of Microsystems, is a university center funded by the Department of Energy's National Nuclear Security Administration (NNSA) under their Advanced Simulation and Computing (ASC)...