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Resonant tunneling diode (RTD) is a diode with a resonant tunneling structure in which electrons can tunnel through some resonant states at certain energy levels. The current–voltage characteristic often exhibits negative differential resistance regions.
Learn more about quantum dots from the many resources on this site, listed below. More information on RTD can be found here.
Tutorial 4a: High Bias Quantum Transport in Resonant Tunneling Diodes
29 Mar 2011 | | Contributor(s):: Gerhard Klimeck
Outline:Resonant Tunneling Diodes - NEMO1D: Motivation / History / Key InsightsOpen 1D Systems: Transmission through Double Barrier Structures - Resonant TunnelingIntroduction to RTDs: Linear Potential DropIntroduction to RTDs: Realistic Doping ProfilesIntroduction to RTDs: Relaxation Scattering...
Tutorial 4c: Formation of Bandstructure in Finite Superlattices (Exercise Session)
How does bandstructure occur? How large does a repeated system have to be? How does a finite superlattice compare to an infinite superlattice?
Tutorial 4d: Formation of Bandstructure in Finite Superlattices (Exercise Demo)
Demonstration of thePiece-Wise Constant Potential Barriers Tool.
Nanoelectronic Modeling nanoHUB Demo 2: RTD simulation with NEGF
09 Mar 2010 | | Contributor(s):: Gerhard Klimeck
Demonstration of resonant tunneling diode (RTD) simulation using the RTD Simulation with NEGF Tool with a Hartree potential model showing potential profile, charge densities, current-voltage characteristics, and resonance energies. Also demonstrated is a RTD simulation using a Thomas-Fermi...
Nanoelectronic Modeling nanoHUB Demo 1: nanoHUB Tool Usage with RTD Simulation with NEGF
Demonstration of running tools on the nanoHUB. Demonstrated is the RTD Simulation with NEGF Tool using a simple level-drop potential model and a more realistic device using a Thomas-Fermi potential model.
Nanoelectronic Modeling: Exercises 1-3 - Barrier Structures, RTDs, and Quantum Dots
27 Jan 2010 | | Contributor(s):: Gerhard Klimeck
Exercises:Barrier StructuresUses: Piece-Wise Constant Potential Barrier ToolResonant Tunneling DiodesUses: Resonant Tunneling Diode Simulation with NEGF • Hartree calculation • Thomas Fermi potentialQuantum DotsUses: Quantum Dot Lab • pyramidal dot
Nanoelectronic Modeling Lecture 19: Introduction to RTDs - Asymmetric Structures
This lecture explores this effect in more detail by targeting an RTD that has a deliberate asymmetric structure. The collector barrier is chosen thicker than the emitter barrier. With this set-up we expect that the tunneling rate into the RTD from the emitter is faster than the tunneling rate...
Nanoelectronic Modeling Lecture 18: Introduction to RTDs - Quantum Charge Self-Consistency (Hartree)
In this semi-classical charge and potential model the quantum mechanical simulation is performed once and the quantum mechanical charge is in general not identical to the semi-classical charge.
Nanoelectronic Modeling Lecture 17: Introduction to RTDs - Relaxation Scattering in the Emitter
Realistic RTDs will have nonlinear electrostatic potential in their emitter. Typically a triangular well is formed in the emitter due to the applied bias and the emitter thus contains discrete quasi bound states.
Nanoelectronic Modeling Lecture 16: Introduction to RTDs - Realistic Doping Profiles
Realistic RTDs need extremely high doping to provide enough carriers for high current densities. However, Impurity scattering can destroy the RTD performance. The dopants are therefore typically spaced 20-100nm away from the central double barrier structure.
Nanoelectronic Modeling Lecture 12: Open 1D Systems - Transmission through Double Barrier Structures - Resonant Tunneling
27 Jan 2010 | | Contributor(s):: Gerhard Klimeck, Dragica Vasileska
This presentation shows that double barrier structures can show unity transmission for energies BELOW the barrier height, resulting in resonant tunneling. The resonance can be associated with a quasi bound state, and the bound state can be related to a simple particle in a box calculation.
Comparison of PCPBT Lab and Periodic Potential Lab
10 Aug 2009 | | Contributor(s):: Abhijeet Paul, Samarth Agarwal, Gerhard Klimeck, Junzhe Geng
This small presentation provides information about the comparison performed for quantum wells made of GaAs and InAs in two different tools. This has been done to benchmark the results from completely two different sets of tools and validate the obtained results. In this presentation we provide...
Nanoelectronic Modeling: Multimillion Atom Simulations, Transport, and HPC Scaling to 23,000 Processors
out of 5 stars
07 Mar 2008 | | Contributor(s):: Gerhard Klimeck
Future field effect transistors will be on the same length scales as “esoteric” devices such as quantum dots, nanowires, ultra-scaled quantum wells, and resonant tunneling diodes. In those structures the behavior of carriers and their interaction with their environment need to be fundamentally...