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effect of number of barrier devices on NDR of RTD
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what is conduction band alignment ratio of AlAs/InGaAs/AlAs DBQW ?
Qualitative treatment of the simulated design (GaN based RTD)has to be done in order to explore more properties of RTD under experimentation. This results in building a novel device which has the...
Additional Tutorials on Selected Topics in Nanotechnology
29 Mar 2011 | | Contributor(s):: Gerhard Klimeck, Umesh V. Waghmare, Timothy S Fisher, N. S. Vidhyadhiraja
Select tutorials in nanotechnology, a part of the 2010 NCN@Purdue Summer School: Electronics from the Bottom Up.
Tutorial 4: Far-From-Equilibrium Quantum Transport
29 Mar 2011 | | Contributor(s):: Gerhard Klimeck
These lectures focus on the application of the theories using the nanoelectronic modeling tools NEMO 1- D, NEMO 3-D, and OMEN to realistically extended devices. Topics to be covered are realistic resonant tunneling diodes, quantum dots, nanowires, and Ultra-Thin-Body Transistors.
Tutorial 4a: High Bias Quantum Transport in Resonant Tunneling Diodes
Outline:Resonant Tunneling Diodes - NEMO1D: Motivation / History / Key InsightsOpen 1D Systems: Transmission through Double Barrier Structures - Resonant TunnelingIntroduction to RTDs: Linear Potential DropIntroduction to RTDs: Realistic Doping ProfilesIntroduction to RTDs: Relaxation Scattering...
Tutorial 4c: Formation of Bandstructure in Finite Superlattices (Exercise Session)
How does bandstructure occur? How large does a repeated system have to be? How does a finite superlattice compare to an infinite superlattice?
Tutorial 4d: Formation of Bandstructure in Finite Superlattices (Exercise Demo)
Demonstration of thePiece-Wise Constant Potential Barriers Tool.
2010 NCN@Purdue Summer School: Electronics from the Bottom Up
18 Jan 2011 |
Electronics from the Bottom Up seeks to bring a new perspective to electronic devices – one that is designed to help realize the opportunities that nanotechnology presents.
Nanoelectronic Modeling Lecture 25a: NEMO1D - Full Bandstructure Effects
07 Jul 2010 | | Contributor(s):: Gerhard Klimeck
(quantitative RTD modeling at room temperature)
Resonant Tunneling Diode operation
22 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
A resonant tunneling diode (RTD) is a type of diode with a resonant tunneling structure that allows electrons to tunnel through various resonant states at certain energy levels. RTDs can be fabricated using many different types of materials (such as III-V, type IV, II-VI semiconductors) and...
Nanoelectronic Modeling Lecture 23: NEMO1D - Importance of New Boundary Conditions
09 Mar 2010 | | Contributor(s):: Gerhard Klimeck
One of the key insights gained during the NEMO1D project was the development of new boundary conditions that enabled the modeling of realistically extended Resonant Tunneling Diodes (RTDs). The new boundary conditions are based on the partitioning of the device into emitter and collector...
Nanoelectronic Modeling Lecture 24: NEMO1D - Incoherent Scattering
Incoherent processes due to phonons, interface roughness and disorder had been suspected to be the primary source of the valley current of resonant tunneling diodes (RTDs) at the beginning of the NEMO1D project in 1994. The modeling tool NEMO was created at Texas Instruments to fundamentally...
Nanoelectronic Modeling Lecture 25b: NEMO1D - Hole Bandstructure in Quantum Wells and Hole Transport in RTDs
Heterostructures such as resonant tunneling diodes, quantum well photodetectors and lasers, and cascade lasers break the symmetry of the crystalline lattice. Such break in lattice symmetry causes a strong interaction of heavy-, light- and split-off hole bands. The bandstructure of holes and the...
Nanoelectronic Modeling Lecture 26: NEMO1D -
NEMO1D demonstrated the first industrial strength implementation of NEGF into a simulator that quantitatively simulated resonant tunneling diodes. The development of efficient algorithms that simulate scattering from polar optical phonons, acoustic phonons, alloy disorder, and interface roughness...