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SDMS L4.03: Mobility Modeling
09 Oct 2023 | | Contributor(s):: Dragica Vasileska
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ECE 606 L17.2 Transport - Mobility
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L32.3: Modern MOSFET - Control of Threshold Voltage
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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Thermal Energy at the Nanoscale
31 Jan 2022 | | Contributor(s):: Timothy S Fisher
These lecture notes provide a detailed treatment of the thermal energy storage and transport by conduction in natural and fabricated structures.
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Fundamentals of Nanotransistors
30 Jan 2022 | | Contributor(s):: Mark Lundstrom
The objective of these lectures is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a...
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IWCN 2021: Effective Monte Carlo Simulator of Hole Transport in SiGe alloys
25 Jul 2021 | | Contributor(s):: Caroline dos Santos Soares, Alan Rossetto, Dragica Vasileska, Gilson Wirth
In this work, an Ensemble Monte Carlo (EMC) transport simulator is presented for simulation of hole transport in SiGe alloys.
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IWCN 2021: How to Preserve the Kramers-Kronig Relation in Inelastic Atomistic Quantum Transport Calculations
15 Jul 2021 | | Contributor(s):: Daniel Alberto Lemus, James Charles, Tillmann Christoph Kubis
The nonequilibrium Green’s function method (NEGF) is often used to predict quantum transport in atomically resolved nanodevices. This yields a high numerical load when inelastic scattering is included. Atomistic NEGF had been regularly applied on nanodevices, such as nanotransistors....
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Short Channel Effects
05 Mar 2021 | | Contributor(s):: Ashish anil Bait
Here are the all short channel effects that you require.
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Atomistic Green’s Functions: The Beauty of Self-energies
28 Oct 2020 | | Contributor(s):: Tillmann Christoph Kubis
This presentation gives an introduction to NEGF. It will be explained how self-energies cause NEGF to fundamentally differ from most other quantum methods. Atomistic examples of phonon and impurity scattering self-energies agree quantitatively with experiments.
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Fundamentals of Phonon Transport Modeling L5: Phonon-Boundary and Phonon-Defect Scattering
04 Jan 2017 | | Contributor(s):: Alan McGaughey, Xiulin Ruan
Part of the 2016 IMECE Tutorial: Fundamentals of Phonon Transport Modeling: Formulation, Implementation, and Applications.
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Phonon Interactions in Single-Dopant-Based Transistors: Temperature and Size Dependence
25 Nov 2015 | | Contributor(s):: Marc Bescond, Nicolas Cavassilas, Salim Berrada
IWCE 2015 presentation. in this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. we use a 3d real-space non-equilibrium green': ; s function (negf) approach where electron-phonon...
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nanoDDSCAT+
13 Aug 2014 | | Contributor(s):: AbderRahman N Sobh, Sarah White, Jeremy Smith, Nahil Sobh, Prashant K Jain
Combines the Discrete Dipole Scattering (DDSCAT) tool with the DDAConvert tool for a single workflow for custom shapes.
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Disordered Photonics
08 Apr 2014 | | Contributor(s):: Hui Cao
Most of the research in the field of photonics has focused on understanding and mitigating the effects of disorder which are often detrimental. For certain applications, however, intentionally introducing disorder can actually improve the device performance, e.g., in photovoltaics optical...
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nanoDDSCAT
23 Apr 2013 | | Contributor(s):: Prashant K Jain, Nahil Sobh, Jeremy Smith, AbderRahman N Sobh, Sarah White, Jacob Faucheaux, John Feser
Calculate scattering and absorption of light by targets with arbitrary geometries and complex refractive index.
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DDSCAT Convert: A Target Generation Tool
17 Jul 2013 | | Contributor(s):: John Feser, AbderRahman N Sobh
Convert .obj files to DDSCAT shape files
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Carbon Nanotube Electronics: Modeling, Physics, and Applications
27 Jun 2013 | | Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...
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Modeling Quantum Transport in Nanoscale Transistors
27 Jun 2013 | | Contributor(s):: Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new theory...
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Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S
27 Jun 2013 | | Contributor(s):: Carl R. Huster
For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...
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Nanoscale Transistors Lecture 10: Scattering Model
19 Jul 2012 | | Contributor(s):: Mark Lundstrom
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Nanoscale Transistors Lecture 9: Scattering and Transmission
19 Jul 2012 | | Contributor(s):: Mark Lundstrom