All Categories (1-18 of 18)

1. Thermal Conductivity Simulator

   03 Dec 2020 | Contributor(s):: Md Shajedul Hoque Thakur, Md Mahbubul Islam

   Simulate thermal conductivity of Silicon using reverse non-equilibrium molecular dynamics simulations.

2. is the C-Si used in the simulation doped or not?

   Q&A|Closed | Responses: 1

   I need information about if is the crystalline silicon use din the simulation doped or not?

   https://nanohub.org/answers/question/2391

3. 

   Purvam Dineshbhai Modi

   https://nanohub.org/members/280328

4. ME 697R Lecture 5.2: First Principles Method - Electronic Structure of Solids

   29 Oct 2019 | | Contributor(s):: Xiulin Ruan

5. Graphene Layer Structure with 3% Random Silicon

   02 Aug 2019 | | Contributor(s):: James Charles, Sabre Kais, Tillmann Christoph Kubis

   This .xyz file contains a 11,520,000 atoms structure of graphene with randomly placed Silicon. The concentration of Silicon is approximately 3%. This structure file was used to create the data in the paper "Recursive open boundary and interfaces method for material modeling, exemplified on...

6. 

   Steven Estrella

   https://nanohub.org/members/189991

7. Purdue Solar Cell Model (PSM) - Si

   04 May 2017 | Compact Models | Contributor(s):

   By Mark Lundstrom¹, Muhammad A. Alam¹, Raghu Vamsi Krishna Chavali¹, Sourabh Dongaonkar¹, Suhas Venkat Baddela¹, Xingshu Sun¹

   Purdue University

   Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This...

   https://nanohub.org/publications/184/?v=1

8. Si band structure sequence

   Collections | 30 Oct 2016 | Posted by Tanya Faltens

   https://nanohub.org/groups/materials/collections/saved-materials-science-runs

9. Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

   06 Apr 2016 | Compact Models | Contributor(s):

   By Jorge-Daniel Aguirre Morales¹, Sébastien Frégonèse², Chhandak Mukherjee³, Cristell Maneux³, Thomas Zimmer³

   1. CNRS, University of Bordeaux, IMS Laboratory 2. CNRS, IMS Laboratory 3. University of Bordeaux, IMS Laboratory

   A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.

   https://nanohub.org/publications/133/?v=1

10. Reproducing results of "Thermal transport in SiGe superlattice thin films and nanowires"

    27 Mar 2015 | | Contributor(s):: Alejandro Strachan, Jonathan Mark Dunn

    In this document we show how to reproduce results in the paper "Thermal transport in SiGe superlattice thin films and nanowires", Keng-hua Lin, and Alejandro Strachan Physical Review B 87, 115302 (2011) using the nanoMATERIALS nanoscale heat transport tool in nanoHUB....

11. 

    Carolina Marques

    https://nanohub.org/members/113848

12. 

    Yassine Sayad

    https://nanohub.org/members/103336

13. Uniaxial and Biaxial Stress Strain Calculator for Semiconductors

    16 Jan 2014 | | Contributor(s):: Jamie Teherani

    Simulate stress or strain along user-defined Miller directions for arbitrary stress/strain configurations.

14. [Illinois] CNST 2012: Nanostructured Silicon Optical Materials as Multifunctional Cell Culture Substrates

    23 May 2012 | | Contributor(s):: Kris Killian

    …

15. Learning Module: Bonding and Band Structure in Silicon

    The main goal of this learning module is to help students learn about the correlation between atomic structure and electronic properties, and help them develop a more intuitive understanding of the...

    https://nanohub.org/wiki/LearningModuleSiliconBandstructureDFT

16. Thermoelectric effects in semiconductor nanostructures: Role of electron and lattice properties

    29 Sep 2010 | | Contributor(s):: Abhijeet Paul, Gerhard Klimeck

    This presentation covers some aspects of present development in the field of thermoelectricity and focuses particularly on the silicon nanowires as potential thermoelectric materials. The electronic and phonon dispersions are calculated and used for the calculation of thermoelectric properties in...

17. Bulk Monte Carlo: Implementation Details and Source Codes Download

    01 Jun 2010 | | Contributor(s):: Dragica Vasileska, Stephen M. Goodnick

    The Ensemble Monte Carlo technique has been used now for over 30 years as a numerical method to simulate nonequilibrium transport in semiconductor materials and devices, and has been the subject of numerous books and reviews. In application to transport problems, a random walk is generated to...

18. Band Structure Lab: First-Time User Guide

    15 Jun 2009 | | Contributor(s):: Abhijeet Paul, Benjamin P Haley, Gerhard Klimeck

    This document provides useful information about Band Structure Lab. First-time users will find basic ideas about the physics behind the tool such as band formation, the Hamiltonian description, and other aspects. Additionally, we provide explanations of the input settings and the results of the...