Resources (61-80 of 88)

1. Electron Density in a Nanowire

   30 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Saumitra Raj Mehrotra

   Electron Density in a circular Silicon nanowire transistor.

2. Tunneling in an Nanometer-Scaled Transistor

   25 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Mathieu Luisier, Neerav Kharche, George A. Howlett, Insoo Woo, David Ebert

   Electrons tunneling through the gate of an ultra-scaled transistor.

3. Modeling the quantum dot growth in the continuum approximation

   12 Jan 2011 | | Contributor(s):: Peter Cendula

   Quantum dots can grow spontaneously during molecular beam epitaxy oftwo materials with different lattice parameters, Stranski-Krastanow growth mode.We study a mathematical model based on the continuum approximation of thegrowing layer in two dimensions. Nonlinear evolution equation is solved...

4. A methodology for SPICE-compatible modeling of nanoMOSFETs

   17 Nov 2010 | | Contributor(s):: Alba Graciela Avila, David Espejo

   An original SPICE-compatible model for Intel's 45nm High-K MOSFET is presented. It takes into account some Quantum-Mechanical Effects that occur at small scale like Channel Length Modulation (CLM), Threshold Voltage variation and Velocity saturation, and is the first in his class that is not...

5. Solar Cells Operation and Modeling

   19 Jul 2010 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

   This set of slides decribes the basic principles of operation of various generations on solar cells with emphasis to single crystalline solar cells. Next, semiconductor equations that describe the operation of a solar cell under simplified conditions is given. Finally, modeling of single junction...

6. Exercise for MOSFET Lab: Device Scaling

   28 Jun 2010 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

   This exercise explores device scaling and how well devices are designed.

7. Ripples and Warping of Graphene: A Theoretical Study

   08 Jun 2010 | | Contributor(s):: Umesh V. Waghmare

   We use first-principles density functional theory based analysis to understand formation of ripples in graphene and related 2-D materials. For an infinite graphene, we show that ripples are linked with a low energy branch of phonons that exhibits quadratic dispersion at long wave-lengths. Many...

8. Computer in Science Engineering: featuring nanoHUB.org

   22 Apr 2010 |

   The current issue of Computing in Science and Engineering focuses on cyber-enabled nanotechnology, and nanoHUB.org is featured extensively throughout.

9. Carbon nanotube bandstructure

   22 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck

   Carbon nanotubes are allotropes of carbon with a cylindrical nanostructure, and can be categorized into single-walled nanotubes (SWNT) and multi-walled nanotubes (MWNT). These cylindrical carbon molecules have novel properties that make them potentially useful in many nanotechnology applications,...

10. Threshold voltage in a nanowire MOSFET

    22 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, SungGeun Kim, Gerhard Klimeck

    Threshold voltage in a metal oxide semiconductor field-effect transistor (better known as a MOSFET) is usually defined as the gate voltage at which an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. A MOSFET is said to be...

11. Resonant Tunneling Diode operation

    22 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck

    A resonant tunneling diode (RTD) is a type of diode with a resonant tunneling structure that allows electrons to tunnel through various resonant states at certain energy levels. RTDs can be fabricated using many different types of materials (such as III-V, type IV, II-VI semiconductors) and...

12. Nanotechnology Animation Gallery

    22 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck

    Animations and visualization are generated with various nanoHUB.org tools to enable insight into nanotechnology and nanoscience. Click on image for detailed description and larger image download. Additional animations are also...

13. Comb Drive Levitation

    19 Jan 2010 | | Contributor(s):: Fengyuan (Thomas) Li, jason clark

    Model comb drive levitation effect with Schwarz-Christoffel based algorithm

14. Semiconductor Device Theory Exercises

    out of 5 stars 

    30 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck, Mark Lundstrom

    This collection of problems should help the students to better understand Semiconductor Device Physics on a fundamental and more complex level. Crystal lattices and Miller indiciesFrom 1 well to 2 wells to 5 wells to periodic potentialsPeriodic potentials and bandstructureBandstructure...

15. Nanoelectronic Modeling Lecture 22: NEMO1D - Motivation, History and Key Insights

    out of 5 stars 

    05 Feb 2010 | | Contributor(s):: Gerhard Klimeck

    The primary objective of the NEMO-1D tool was the quantitative modeling of high performance Resonant Tunneling Diodes (RTDs). The software tool was intended for Engineers (concepts, fast turn-around, interactive) and Scientists (detailed device anaysis). Therefore various degrees of...

16. Nanoelectronic Modeling Lecture 03: nanoHUB.org - Online Simulation and More

    out of 5 stars 

    30 Dec 2009 | | Contributor(s):: Gerhard Klimeck

    This presentation provides a brief overview of the nanoHUB capabilites, compares it to static web page delivery, highlights its technology basis, and provides a vision for future cyberinfrastructures in a system of federated HUBs powered by the HUBzero.org infrastructure.

17. Nanoelectronic Modeling Lecture 02: (NEMO) Motivation and Background

    out of 5 stars 

    30 Dec 2009 | | Contributor(s):: Gerhard Klimeck, Dragica Vasileska

    Fundamental device modeling on the nanometer scale must include effect of open systems, high bias, and an atomistic basis. The non-equilibrium Green Function Formalism (NEGF) can include all these components in a fundamentally sound approach and has been the basis for a few novel device...

18. ECE 656 Lecture 31: Monte Carlo Simulation

    out of 5 stars 

    24 Nov 2009 | | Contributor(s):: Mark Lundstrom

    Outline:IntroductionReview of carrier scatteringSimulating carrier trajectoriesFree flightCollisionUpdate after collisionPutting it all togetherSummary

19. ECE 656 Lecture 30: Balance Equation Approach III

    out of 5 stars 

    24 Nov 2009 | | Contributor(s):: Mark Lundstrom

    OutlineCarrier Temperature and Heat FluxBalance equations in 3DHeterostructuresSummary

20. Lecture 5: NEGF Simulation of Graphene Nanodevices

    out of 5 stars 

    21 Sep 2009 | | Contributor(s):: Supriyo Datta