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nMOSFET RF and noise model on standard 45nm SOI technology
01 Jan 2017 | Compact Models | Contributor(s):
By Yanfei Shen1, Saeed Mohammadi1
A compact scalable model suitable for predicting high frequency noise and nonlinear behavior of N-type Metal Oxide Semiconductor (NMOS) transistors is presented.
Ivan C R nascimento
Modeling Self-Heating Effects in SOI Devices and GaN HEMTs
12 Jun 2013 | Presentation Materials | Contributor(s): Dragica Vasileska
The role of self-heating effects is investigated in SOI devices and GaN HEMTs.
Are there any clear advantages to either UTB SOI vs FinFet devices?
Open | Responses: 1
I have been doing some reading on these devices and it seems that both structures give the gate more control and suppress the influence of the drain voltage on the channel. So, is there a clear...
Tutorial 4b: Introduction to the NEMO3D Tool - Electronic Structure and Transport in 3D
29 Mar 2011 | Online Presentations | Contributor(s): Gerhard Klimeck
Electronic Structure and Transport in 3D - Quantum Dots, Nanowires and Ultra-Thin Body Transistors
problem: electric field in oxide is not constant
Closed | Responses: 0
I am new to MEDICI and currently simulating an SOI structure on it.
Dimensions: gate oxide: 20nm, silicon film=100nm, Buried Oxide=400nm, channel length=300nm
Problem is the plot...
Self-Heating Effects in Nano-Scale Devices. What do we know so far ...
10 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Stephen M. Goodnick
This presentation contains the research findings related to self-heating effects in nano-scale devices in silicon on insulator devices obtained at Arizona State University. Different device...
ECE 612 Lecture 25: SOI Electrostatics
0.0 out of 5 stars
08 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom
2. General solution,
3. VTF vs. VGB,
4. Subthreshold slope,
5. Double gate (DG) SOI,
Quantum and Thermal Effects in Nanoscale Devices
4.5 out of 5 stars
18 Sep 2008 | Online Presentations | Contributor(s): Dragica Vasileska
To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the...
Exercise: Basic Operation of n-Channel SOI Device
24 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This exercise teaches the students the basic operation of n-channel SOI devices.NSF
Illinois Tools: MOCA
4.0 out of 5 stars
28 Mar 2007 | Tools | Contributor(s): Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney
A 2D Full-band Monte Carlo (MOCA) Simulation of SOI Device Structures