Tags: SOI devices

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  1. Chapter 1: A Primer on the MOSFet Simulator on nanoHUB.org

    19 Mar 2020 | | Contributor(s):: Abdussamad Ahmed Muntahi, Dragica Vasileska, Shaikh S. Ahmed

    The MOSFet simulator on nanoHUB.org (http://nanohub.org/resources/mosfet) simulates the equilibrium electrostatics and non-equilibrium current-voltage (I-V) characteristics of i) bulk, ii) dual-gate, and iii) SOI based field effect transistors. In this chapter, we will describe: i) the structure...

  2. Animesh Gupta

    https://nanohub.org/members/193300

  3. JFETIDG Model for Independent Dual-Gate JFETs

    19 Jul 2017 | Compact Models | Contributor(s):

    By Colin McAndrew1, Kejun Xia2

    1. Freescale Semiconductor 2. NXP Semiconductors

    JFETIDG is a compact model for independent dual-gate JFETs. It is also applicable to: resistors with metal shields; the drift region of LDMOS transistors; the collector resistance of vertical...

    https://nanohub.org/publications/173/?v=2

  4. Anitha Raj

    https://nanohub.org/members/145685

  5. Ivan C R nascimento

    https://nanohub.org/members/121504

  6. Modeling Self-Heating Effects in SOI Devices and GaN HEMTs

    12 Jun 2013 | | Contributor(s):: Dragica Vasileska

    The role of self-heating effects is investigated in SOI devices and GaN HEMTs.

  7. Are there any clear advantages to either UTB SOI vs FinFet devices?

    Q&A|Open | Responses: 1

    I have been doing some reading on these devices and it seems that both structures give the gate more control and suppress the influence of the drain voltage on the channel. So, is there a clear...

    https://nanohub.org/answers/question/934

  8. Tutorial 4b: Introduction to the NEMO3D Tool - Electronic Structure and Transport in 3D

    29 Mar 2011 | | Contributor(s):: Gerhard Klimeck

    Electronic Structure and Transport in 3D - Quantum Dots, Nanowires and Ultra-Thin Body Transistors

  9. problem: electric field in oxide is not constant

    Q&A|Closed | Responses: 0

    Hi all, I am new to MEDICI and currently simulating an SOI structure on it. Dimensions: gate oxide: 20nm, silicon film=100nm, Buried Oxide=400nm, channel length=300nm

    Problem is the plot...

    https://nanohub.org/answers/question/363

  10. Self-Heating Effects in Nano-Scale Devices. What do we know so far ...

    10 Aug 2009 | | Contributor(s):: Dragica Vasileska, Stephen M. Goodnick

    This presentation contains the research findings related to self-heating effects in nano-scale devices in silicon on insulator devices obtained at Arizona State University. Different device technologies and different device geometries are being examined. Details of the theoretical model used in...

  11. ECE 612 Lecture 25: SOI Electrostatics

    08 Dec 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1. Introduction,2. General solution, 3. VTF vs. VGB,4. Subthreshold slope,5. Double gate (DG) SOI,6. Recap,7. Discussion,8. Summary.

  12. Quantum and Thermal Effects in Nanoscale Devices

    18 Sep 2008 | | Contributor(s):: Dragica Vasileska

    To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the self-consistent fields and the hydrodynamic equations for acoustic and optical phonons. The phonon...

  13. Exercise: Basic Operation of n-Channel SOI Device

    23 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck

    This exercise teaches the students the basic operation of n-channel SOI devices.NSF

  14. Illinois Tools: MOCA

    28 Mar 2007 | | Contributor(s):: Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney, Kyeong-hyun Park

    2D Full-band Monte Carlo (MOCA) Simulation for SOI-Based Device Structures

  15. Najeeb ud din Hakim

    https://nanohub.org/members/19401