All Categories (1-13 of 13)

  1. Peking University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model

    27 Mar 2019 | Compact Models | Contributor(s):

    By Weijie Xu1, Jinfeng Kang1

    Peking University

    The Peking University RRAM Model is a SPICE-compatible compact model which is designed for simulation of metal-oxide based RRAM devices. It captures typical DC and AC electrical behaviors of the...


  2. W. S. Grabinski



  3. SPICE Subcircuit Generator for Ferromagnetic Nanomaterials

    05 Feb 2018 | Contributor(s):: Onur Dincer, Azad Naeemi

    Generates SPICE subcircuit netlist for ferromagnetic nanometarials for spintronic devices

  4. Formulating ModSpec or: what is a device, exactly?

    27 Mar 2017 | Contributor(s):: Jaijeet Roychowdhury, Tianshi Wang, Karthik Aadithya, A. Gokcen Mahmutoglu, Archit Gupta, Bichen Wu

    ModSpec is a mathematically-based, multi-physics format for describing devices and their interaction with networks. This document details the "derivation" of the ModSpec format, describes the MATLAB API for ModSpec, and provides detailed examples.

  5. ModSpec: an Open, Universal, Low-Level Model API: Proposal for designation as a CMC-approved standard

    27 Mar 2017 | | Contributor(s):: Jaijeet Roychowdhury, Tianshi Wang, A. Gokcen Mahmutoglu, Archit Gupta

    This is a presentation given to the CMC (Compact Modeling Coalition) on March 23, 2017, describing the ModSpec device modelling format and its benefits as a standard for compact model specification and interchange. Further mathematical/technical details of ModSpec are in...

  6. Well-Posed Device Models for Electrical Circuit Simulation

    27 Mar 2017 | | Contributor(s):: A. Gokcen Mahmutoglu, Tianshi Wang, Archit Gupta, Jaijeet Roychowdhury

    This document provides guidelines for creating computational device models that work well in simulation. We build our discussion around the mathematical notion of “well-posedness”. We show that the requirements for a model to be well-posed stem from the internal working mechanisms of...

  7. Simulation-ready Compact Modeling of Memristive Devices

    25 May 2016 | | Contributor(s):: Tianshi Wang

  8. Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) HSPICE Model

    08 Feb 2016 | | Contributor(s):: Morteza Gholipour, Ying-Yu Chen, Deming Chen

    SPICE model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs) for different types of materials (MoS2, MoSe2, MoTe2, WS2, WSe2), considering effects when scaling the transistor size down to the 16-nm technology node. This model can be used for circuit-level simulations.

  9. Hybrid CMOS/SET models for PSpice?

    Closed | Responses: 0

    Hello! Can anyone tell me where can I find models for hybrid transistors (CMOS and Sinlgle Electron) for designing circuits in PSpice? I must find them for my homework. Thank you!


  10. Ozgur Polat


  11. SPICE Models for Magnetic Tunnel Junctions Based on Monodomain Approximation

    21 Aug 2013 | | Contributor(s):: Xuanyao Fong, Sri Harsha Choday, Panagopoulos Georgios, Charles Augustine, Kaushik Roy

    Models for simulating a magnetic tunnel junction in HSPICE. The usage description is included in the "USAGE" text file included in the archive. The libraries are encrypted and have been tested in HSPICE-G-2012.06, HSPICE-E-2010.12-SP2 and HSPICE-D-2010.03-SP1. The archives are named...

  12. SPICE Model of Graphene Nanoribbon FETs (GNRFET)

    12 Jul 2013 | | Contributor(s):: Ying-Yu Chen, Morteza Gholipour, Artem Rogachev, Amit Sangai, Deming Chen

    This is a SPICE compatible model for both MOS- and Schottky-Barrier-type Graphene Nano-Ribbons Field-Effect Transistor. These MOS-GNRFET and SB-GNRFET models are implemented in HSPICE and can be used for circuit simulations. The model is implemented based on the...

  13. A methodology for SPICE-compatible modeling of nanoMOSFETs

    17 Nov 2010 | | Contributor(s):: Alba Graciela Avila, David Espejo

    An original SPICE-compatible model for Intel's 45nm High-K MOSFET is presented. It takes into account some Quantum-Mechanical Effects that occur at small scale like Channel Length Modulation (CLM), Threshold Voltage variation and Velocity saturation, and is the first in his class that is not...