Resources (41-42 of 42)

1. The Effect of Physical Geometry on the Frequency Response of Carbon Nanotube Field-Effect Transistors

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   03 Aug 2007 | | Contributor(s):: Dave Lyzenga

   In order for carbon nanotube (CNT) electrical devices to be fabricated, it is necessary to obtain modifiable operation characteristics. Developing parametric equations to achieve this controllability in the vertical field-effect transistor (FET) design is an important first step toward...

2. Three-Dimensional Simulations of Field Effect Sensors for DNA Detection

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   03 Aug 2006 | | Contributor(s):: Eddie Howell, Gerhard Klimeck

   Here, the development of a DNA field-effect transistor (DNAFET) simulator is described. In DNAFETs the gate structure of a silicon on insulator (SOI) field-effect transistor is replaced by a layer of immobilized single-stranded DNA molecules which act as surface probe molecules. When...